• Title/Summary/Keyword: ring-pack

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Piston Crevice Hydrocarbon Oxidation During Expansion Process in an SI Engine

  • Kyoungdoug Min;Kim, Sejun
    • Journal of Mechanical Science and Technology
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    • v.17 no.6
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    • pp.888-895
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    • 2003
  • Combustion chamber crevices in SI engines are identified as the largest contributors to the engine-out hydrocarbon emissions. The largest crevice is the piston ring-pack crevice. A numerical simulation method was developed, which would allow to predict and understand the oxidation process of piston crevice hydrocarbons. A computational mesh with a moving grid to represent the piston motion was built and a 4-step oxidation model involving seven species was used. The sixteen coefficients in the rate expressions of 4-step oxidation model are optimized based on the results from a study on the detailed chemical kinetic mechanism of oxidation in the engine combustion chamber. Propane was used as the fuel in order to eliminate oil layer absorption and the liquid fuel effect. Initial conditions of the burned gas temperature and in-cylinder pressure were obtained from the 2-zone cycle simulation model. And the simulation was carried out from the end of combustion to the exhaust valve opening for various engine speeds, loads, equivalence ratios and crevice volumes. The total hydrocarbon (THC) oxidation in the crevice during the expansion stroke was 54.9% at 1500 rpm and 0.4 bar (warmed-up condition). The oxidation rate increased at high loads, high swirl ratios, and near stoichiometric conditions. As the crevice volume increased, the amount of unburned HC left at EVO (Exhaust Valve Opening) increased slightly.

A Fabrication and Characteristic Estimation of Polycrystalline Silicon Structural Layer for Micromachining (미세가공용 다결정 실리콘 구조체의 제작 및 특성 평가)

  • Kim, Hyoung-Dong;Pack, Seung-Ho;Lee, Seong-Jun;Kim, Chul-Ju
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1442-1444
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    • 1995
  • In this study, we confirmed that the crystallinity and the mechanical properties of polycrystalline Silicon(poly-Si) deposited on the poly-oxide are better than those of poly-Si on the conventional sacrificial layers that is CVD oxide layer or PSG. But the etch rate of poly-oxide is poor than that of the CVD oxide layer or PSG. Therefore, to make the best use of small stress and fast etch rate, we fabricated the double oxide layer; 10%-thick poly-oxide on 90%-thick CVD oxide or PSG. To estimate structure deformation by stress, we fabricated the test structures; cantilever. bridge and ring/beam structure and estimated by SEM. As the results, all structure is expressed the deformed structure by residual stress(tensile stress) and the deformation of the structure layer on the double oxide layer is small compared with that of the structure layer on the CVD oxide layer or PSG. And, the etch rate of the double oxide layer is enhanced compared with that of the poly-oxide.

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