• Title/Summary/Keyword: rhp51$^+$

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Identification of a Regulatory Element Required for 3’-End Formation in Transcripts of rhp51$^+$, a recA Homolog of the Fission Yeast Schizosaccharomyces pombe

  • Yeun Kyu Jang
    • Animal cells and systems
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    • v.3 no.4
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    • pp.413-415
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    • 1999
  • Our previous report demonstrated that the rhp51$^+$, a recA and RAD51 homolog of the fission yeast, encodes three transcripts of 1.9, 1.6 and 1.3 kb which have at least six polyadenylation sites. The 3'-end of the gene alone can direct the formation of multiple, discrete 3'ends of the transcripts. To identify the regulatory element required for the 3'-end formation of -rhp51$^+$ deletion mapping analysis was performed. Northern blot analysis revealed that the 254-bp DNA fragment including 4 distinct poly (A) sites downstream from the Hindlll site, is crucial for normal 3'-end formation. Deletion of the 3'-terminal AU rich region caused appearance of read-through RNA, leading to enhancement of survival rate of the rhp51 deletion mutant in response to DNA damaging agent, methylmethane sulfonate (MMS). The results imply that the rhp51$^+$ system may be useful for molecular analysis of the 3'-end formation of RNA in the fission yeast.

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UVSC of Aspergillus nidulans is a Functional Homolog of RAD51 in Yeast

  • Yoon, Jin-Ho;Seong, Kye-Yong;Chae, Suhn-Kee;Kang, Hyen-Sam
    • BMB Reports
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    • v.34 no.5
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    • pp.428-433
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    • 2001
  • A defect in uvsC of Aspergillus nidulans caused high methyl methansulfonate (MMS)-sensitivity, hyporecombination, and a lack of UV induced mutation. The uvsC gene of Aspergillus nidulans shares a sequence similarity with the RAD51 gene of Saccharomyces cerevisiae. In this study, in vitro and in vivo tests were conducted in order to determine whether or not the UVSC protein had functional similarities to RAD51, the recombination enzyme in yeast. The purified recombinant UVSC protein, following expression in Escherichia coli, showed binding activity to single-stranded DNA (ssDNA), when both ATP and magnesium are present. In addition, ATPase activity was also demonstrated and its activity was stimulated in the presence of ssDNA. The UVSC protein that was expressed under the ADH promoter in S. cerevisiae suppressed in part the sensitivity to MMS of the rad51 null mutant. Similarly, when the uvsC cDNA was expressed from the nmt promoter, the MMS sensitivity of the rhp51 null mutant of Schizosaccharomyces pombe was partially complemented. These results indicate that the A. nidulans UVSC protein is a functional homologue of the RAD51 protein.

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Characterization of Zn diffusion in TnP Cy $Zn_3P_2$ thin film and rapid thermal annealing (RHP에서의 $Zn_3P_2$ 박막 및 RTA법에 의한 Zn 확산의 특성)

  • 우용득
    • Journal of the Korean Vacuum Society
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    • v.13 no.3
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    • pp.109-113
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    • 2004
  • Zn diffusions in InP have been studied by electrochemical capacitance voltage. The InP layer was grown by metal organic chemical vapor deposition, and $Zn_3P_2$ thin film was deposited on the epitaxial substrates. The samples annealed in a rapid thermal annealing. It is demonstrated that surface hole concentration as high as $1\times10^{19}\textrm{cm}^{-3}$ can be achieved. When the Zn diffusion was carried at $550^{\circ}C$ and 5-20 min., the diffusion depth of hole concentration moves from 1.51$\mu\textrm{m}$ to 3.23 $\mu\textrm{m}$, and the diffusion coeffcient of Zn is $5.4\times10^{-11}\textrm{cm}^2$/sec. After activation, the concentration is two orders higher than that of untreated sample at 0.30 $\mu\textrm{m}$ depth. As the annealing time is increase, the hole concentration remains almost constant, except deep depth. It means that excess Zn interstitials exist in the doped region is rapidly diffusion into the undoped region and convert into substitutional When the thickness of $SiO_2$ thin film is above 1,000$\AA$, the hole concentration becomes stable distribution.