• 한국음향학회지
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• 제26권5호
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• pp.214-219
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• 2007

본 논문은 MPEG-2 AAC(Advanced Audio Boding) 디코더에 필요한 IMDCT(Inverse Modified Discrete Cosine Transform)를 고속으로 처리하기 위한 새로운 IFFT(Inverse Fast Fourier Transform) 구현 방식을 제안한다. 기존 방식 중에서 $2^n$(N-point) type IMDCT가 성능이 가장 우수하지만 많은 계산을 요구하는 N/4-point complex IFFT 과정을 포함하고 있다. 본 연구는 $2^n$(N-point) type IMDCT에 포함된 N/4-point complex IFFT의 연산량을 줄이는 방법을 고안하였다. N/4-point complex IFFT는 입력 데이터를 bit-reverse 방식을 사용하여 정렬하지만 본 연구에서는 새로운 입력 데이터 정렬방식과 $N/4^{n+1}$ 형태의 IFFT 고안하여 곱셈, 덧셈, ROM 용량을 줄였다.

• 한국정보통신학회논문지
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• 제3권1호
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• pp.229-234
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• 1999

측정 온도 변화와 n-형 실리콘 기판 농도의 변화를 갖는 백금 쇼트키 다이오드에서 신뢰성 특성을 분석하였다. 신뢰성 측정분석의 파라미터는 순방향 바이어스에서 포화전류, 임계전압과 이상인자이고, 소자의 모양에 따라서 역방향 바이어스에서 항복전압이다. 소자의 모양은 가장자리 효과를 위한 긴직사각형과 정사각형이다. 결과로써, 백금과 엔-실리콘 접합 부분에서 증가된 농도에 의해 순방향 임계전압, 장벽높이와 역방향 항복전압은 감소되었지만 이상인자와 포화전류는 증가되었다. 순방향과 역방향 바이어스 하에서 신뢰성 특성의 추출된 전기적 파라미터 값들은 측정온도(실온,$50^{\circ}C$, $75^{\circ}C$)에서 더 높은 온도에서 증가되었다. 긴직사각형 소자가 가장자리 부분의 터널링 효과에 의해 역방향 항복 특성에서 정사각형 소자보다 감소되었다.

• 대한수학회보
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• 제59권5호
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• pp.1255-1268
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• 2022

We consider the Schrödinger type operator 𝓛 = (-𝚫_ℍⁿ)² + V² on the Heisenberg group ℍⁿ, where 𝚫_ℍⁿ is the sub-Laplacian and the non-negative potential V belongs to the reverse Hölder class RH_s for s ≥ Q/2 and Q ≥ 6. We shall establish the (L^p, L^q) estimates for the Riesz transforms T_𝛼,𝛽,j = V^2𝛼𝛁^j_ℍⁿ𝓛^-𝛽, j = 0, 1, 2, 3, where 𝛁_ℍⁿ is the gradient operator on ℍⁿ, 0 < α ≤ 1-j/4, j/4 < 𝛽 ≤ 1, and 𝛽 - 𝛼 ≥ j/4.

• 멤브레인
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• 제10권4호
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• pp.220-229
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• 2000

본 연구는 한외여과 중공사형 모듈과 역삼투 나권형 모듈로 구성된 모듈 set 1∼7을 이용하여 모듈 set에 따른 순수 및 2차 처리수의 투과 flux를 고찰하고, 적용압력과 온도변화에 의한 한외여과 막과 역삼투 막의 분리 특성을 고찰하였다. 탁도와 SS는 한외여과 막에서 효율적으로 제거되며 COD, T-N, TDS 등은 역삼투 막에서 우수한 제거효율을 나타내었다. 적용압력과 온도의 증가에 따른 투과 flux는 선형적으로 증가하는 경향을 보였다. 이로부터 한외여과 및 역삼투 막은 정유공장 방류수의 고도처리 및 재활용을 위해 적합한 것으로 나타났다.

• 대한수학회지
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• 제47권2호
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• pp.425-443
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• 2010

We investigate the Schr$\ddot{o}$dinger type operator $H_2\;=\;(-\Delta_{\mathbb{H}^n})^2+V^2$ on the Heisenberg group $\mathbb{H}^n$, where $\Delta_{\mathbb{H}^n}$ is the sublaplacian and the nonnegative potential V belongs to the reverse H$\ddot{o}$lder class $B_q$ for $q\geq\frac{Q}{2}$, where Q is the homogeneous dimension of $\mathbb{H}^n$. We shall establish the estimates of the fundamental solution for the operator $H_2$ and obtain the $L^p$ estimates for the operator $\nabla^4_{\mathbb{H}^n}H^{-1}_2$, where $\nabla_{\mathbb{H}^n}$ is the gradient operator on $\mathbb{H}^n$.

• 대한수학회논문집
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• 제34권2호
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• pp.573-583
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• 2019

This article studies the monotonicity, log-convexity of the modified Lommel functions by using its power series and infinite product representation. Some properties for the ratio of the modified Lommel functions with the Lommel function, sinh and cosh are also discussed. As a consequence, $Tur{\acute{a}}n$ type and reverse $Tur{\acute{a}}n$ type inequalities are given. A Rayleigh type function for the Lommel functions are derived and as an application, we obtain the Redheffer-type inequality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• 대한수학회보
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• 제56권5호
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• pp.1117-1127
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• 2019

Let ${\mathcal{L}}_2=(-{\Delta})^2+V^2$ be the $Schr{\ddot{o}}dinger$ type operator, where nonnegative potential V belongs to the reverse $H{\ddot{o}}lder$ class $RH_s$, s > n/2. In this paper, we consider the operator $T_{{\alpha},{\beta}}=V^{2{\alpha}}{\mathcal{L}}^{-{\beta}}_2$ and its conjugate $T^*_{{\alpha},{\beta}}$, where $0<{\alpha}{\leq}{\beta}{\leq}1$. We establish the $(L^p,\;L^q)$-boundedness of operator $T_{{\alpha},{\beta}}$ and $T^*_{{\alpha},{\beta}}$, respectively, we also show that $T_{{\alpha},{\beta}}$ is bounded from Hardy type space $H^1_{L_2}({\mathbb{R}}^n)$ into $L^{p_2}({\mathbb{R}}^n)$ and $T^*_{{\alpha},{\beta}}$ is bounded from $L^{p_1}({\mathbb{R}}^n)$ into BMO type space $BMO_{{\mathcal{L}}1}({\mathbb{R}}^n)$, where $p_1={\frac{n}{4({\beta}-{\alpha})}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})}}$.

• 대한수학회보
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• 제58권1호
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• pp.235-251
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• 2021

We consider the Schrödinger type operator ��k = (-∆)k+Vk on ℝn(n ≥ 2k + 1), where k = 1, 2 and the nonnegative potential V belongs to the reverse Hölder class RHs with n/2 < s < n. In this paper, we establish the (Lp, Lq)-boundedness of the higher order Riesz transform T��,�� = V2��∇2��-��2 (0 ≤ �� ≤ 1/2 < �� ≤ 1, �� - �� ≥ 1/2) and its adjoint operator T∗��,�� respectively. We show that T��,�� is bounded from Hardy type space $H^1_{\mathcal{L}_2}({\mathbb{R}}_n)$ into Lp2 (ℝn) and T∗��,�� is bounded from ��p1 (ℝn) into BMO type space $BMO_{\mathcal{L}_1}$ (ℝn) when �� - �� > 1/2, where $p_1={\frac{n}{4({\beta}-{\alpha})-2}}$, $p_2={\frac{n}{n-4({\beta}-{\alpha})+2}}$. Moreover, we prove that T��,�� is bounded from $BMO_{\mathcal{L}_1}({\mathbb{R}}_n)$ to itself when �� - �� = 1/2.

• 한국재료학회지
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• 제26권8호
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.