• Title/Summary/Keyword: return loss

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Study on EMTP Simulation Applying Dual Reactor for Prevention of the Ferro-resonance and VT Burnout in Substation System

  • Kim, Seok-kon;An, Yong-ho;Jang, Byung-tae;Choi, Jong-kee;Lee, Nam-ho;Han, Jung-yeol;Lee, You-jin
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.1-8
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    • 2015
  • When the line and switchgear of the substation system are disconnected, ferro-resonance can occur. This happens even if the capacitive reactance and inductive reactance are not equal, which are not common resonance conditions. Resonance conditions vary depending on the busbar configuration environment. Although the damping resistance method applying the existing saturable reactor to cope with ferro-resonance has been successfully applied on site, there can be loss of normal function during long-term operation. The reason is because the rise in the operating frequency of saturable reactors means the saturation number is increased. Therefore, it can no longer function as saturable reactor since the resistor having inadequate capacity is burned out. To address this problem, in this paper, an EMTP-based simulation test was performed by designing and applying a dual reactor method, which adds an extended divergence reactor to the 1st side of the VT. The test result confirms that when the divergence reactor is inserted, the voltage and current values obtained at the 1st side and 2nd side of the VT as well as current values of divergence reactor part were stabilized from the transient phenomena and return to normal values. When compared with existing measures, although this method is similar in adding having a reactor added to a system regarding ferro-resonance, it has the advantage of being able to prevent ferro-resonance in advance since the reactor is added before the system is saturated. In addition, because it does not use damping resistance, it can extend the equipment life and stabilize its operation. Therefore, there are a lot of differences in terms of its operating characteristics and achivement of goal between the conventional method and new divergence reactor method.

A Design of High Efficiency Doherty Power Amplifier for Microwave Applications (마이크로파용 고효율 Doherty 전력증폭기 설계)

  • Oh Jeong-Kyun;Kim Dong-Ok
    • Journal of Navigation and Port Research
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    • v.30 no.5 s.111
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    • pp.351-356
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    • 2006
  • In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LDMOS FET. The RF performances cf the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier P1dB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

The 100Watt Unit Power Amplifier Using Temperature Independent Biasing for DTV Repeater Application (Temperature Independent Biasing을 사용한 DTV 중계기용 100Watt급 단위 전력증폭기의 구현)

  • Lee, Young-Sub;Jeon, Joong-Sung;Lee, Seok-Jeong;Ye, Byeong-Duck;Hong, Tchang-Hee
    • Journal of Navigation and Port Research
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    • v.26 no.2
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    • pp.215-220
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    • 2002
  • In this paper, the 100 watt unit ower amplifier using temperature independent biasing for DTV (Digital Television) repeater application is designed and fabricated. The DC operation point of this unit power amplifier at temperature variation from $20^{\circ}C$ to $100^{\circ}C$ is fixed by active bias circuit. The variation of current consumption in the 100 watt unit power amplifier has an excellent characteristics of less than 0.6A. The implemented unit power amplifier has the gain over 12dB, the gain flatness of less than 0.5dB and input and output return, loss of than 15dB over the DTV repeater frequency range (470~806MHz). This unit power amplifier yields intermodulation distortion(IMD) of more than 32dBc at 2MHz offset, which satisfies the IMD at output power of 100 watt (50dBm).

A Design of the Double Circular Array Patch Antenna Minimized the Side Lobe (부엽준위를 극소화한 이중 원형 배열 패치 안테나의 설계)

  • 진경수;이원석;한정세;박병우;정치현
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.24 no.9B
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    • pp.1676-1682
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    • 1999
  • In this paper, the double circular array microstrip patch antenna was designed to minimize the side lobe in which a cooperate feeding network was used to supply the same amplitude and equi-phase to each antenna element. Eight microstirip patch antenna(MPA) elements were arrayed with $45^{\circ}$ interval in the inner circle and the outer circle respectively. The simulation results showed that when the radii of the inner circle and the outer circle were 0.7 $\lambda$0 and 1.45 $\lambda$0, the side lobes of beam pattern were minimized. As the results of the measurements, the return loss of the designed antenna was -14.5[dB] at 11.75[GHz] in the input terminal. When the level of the main lobe was normalized at 0[dB], those of the first and the second side lobe were -18[dB] and -26[dB] respectively. The radiation patterns agree well with the simulated patterns.

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Issues and Improvement Methods of the Bridge Tab in Customer Premises Telecommunications Facilities for High-Speed Communication Network (초고속통신망을 위한 구내통신 설로설비의 브릿지 탭의 문제점과 개선 방안)

  • Min, Gyeong-Ju;Hong, Jae-Hwan;Nam, Sang-Sig;Kim, Jeong-Ho
    • The KIPS Transactions:PartC
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    • v.13C no.7 s.110
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    • pp.881-888
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    • 2006
  • The position of the bridged tap is determined by that of the outlet in most modern apartments, since most of the indoor wiring utilizes the bus wiring structure when deploying the indoor communication line. These bridged taps deteriorate transmission performance in the specific frequency at the time of high-speed multimedia communication, which uses a high frequency bandwidth, since the duality of return loss worsens and line attenuation increases rapidly. As a result, analysis on this phenomenon is required. In this study, the test model is created by modeling the intercommunication facility of the apartment that is the most representative residential house type, and by understanding the structure and the environment of the indoor wiring. Also, how the bridge tap affects performance is analyzed when the VDSL service is provided, so that problems of intercommunication lines can be identified and methods for improving the proper intercommunication line can be suggested, which is suitable for accommodating high-speed multimedia service of the future.

Comparison of Signal to Noise Ratios in different configulation of optical coherence tomography systems (간섭계 형태에 따른 광단층 촬영장치의 SNR 비교)

  • 양승국;박양하;장원석;오상기;김현덕;김기문
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2004.05b
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    • pp.804-806
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    • 2004
  • As a noninvasive imaging meathod, optical coherence tomography system has been extensively studied because it has some advantage such as imaging of high resolution, low cost, and compace size configuration. The optical power of the sample signal reflected from an object is usually very small in optical coherence tomography(OCT) due to absorption and scattering in a sample material. Furthermore, there happens a serious loss of sample signal power in a fiber coupler because it does not transfer to a photodetector but return to the optical source. In order to improve the SNR of OCT system, basic Michelson and Mach-Zehnder interferometer types were configured then, we compared simulation with measurement of reference sample Therefore, an On in configuration of Math-Zehnder interferometer was demonstrated in order to improve the signal to noise ratio

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Characteristics of Sediment Transport under External Force in Haeundae Beach (해운대 해빈에서 특정 외력하의 표사이동 특성)

  • Kim, Gweon-Su;Ryu, Ha-Sang;Park, Hyoung-Su;Kim, Kang-Min
    • Journal of Navigation and Port Research
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    • v.37 no.6
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    • pp.663-671
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    • 2013
  • The width of Haeundae beach has been decreasing annually due to the loss of sand from land, high waves, reflected waves, etc.. The accurate prediction of wave-induced currents is indispensible to analyze the beach deformation due to the sediment transport. In the this study, Numerical experiments were performed with seasonal representative wave on the basis of a long term and comprehensive survey data. In summer, we found the deposition of Mipo by longshore current eastly by ordinary and S waves, and in winter, the deposition of Dongback-island by longshore current westly by ordinary and E waves. In addition, rip current occurs in the middle of Haeundae beach by 50 year return period wave and current westly along the coast by ESE directional wave.

A Flip Chip Packaged 40 Gb/s InP HBT Transimpedance Amplifier (플립칩 패키지된 40Gb/s InP HBT 전치증폭기)

  • Ju, Chul-Won;Lee, Jong-Min;Kim, Seong-Il;Min, Byoung-Gue;Lee, Kyung-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.183-184
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    • 2007
  • A 40 Gb/s transimpedance amplifier IC was designed and fabricated with a InP/InGaAs HBTs technology. In this study, we interconnect 40Gbps trans impedance amplifier IC to a duroid substrate by a flip chip bonding instead of conventional wire bonding for interconnection. For flip chip bonding, we developed fine pitch bump with the $70{\mu}m$ diameter and $150{\mu}m$ pitch using WLP process. To study the effect of WLP, electrical performance was measured and analyzed in wafer and package module using WLP. The Small signal gains in wafer and package module were 7.24 dB and 6.93dB respectively. The difference of small signal gain in wafer and package module was 0.3dB. This small difference of gain is due to the short interconnection length by bump. The characteristics of return loss was under -10dB in both wafer and module. So, WLP process can be used for millimeter wave GaAs MMIC with the fine pitch pad and duroid substrate can be used in flip chip bonding process.

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A Design of High Efficiency Doherty Power Amplifier for Microwave applications (마이크로파용 고효율 Doherty 전력 증폭기 설계)

  • Oh C.G.;Kim D.O.
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 2006.06b
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    • pp.91-96
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    • 2006
  • In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LOMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias..tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier PldB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

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On a Modified Structure of Planar Multiport Power Divider/Combiner at 2 GHz (평면 다수 입출력 전력 분배/결합회로의 2 GHz에서의 구조 수정 연구)

  • Han, Yong-In;Jo, Chi-Sung;Kim, Ihn-Seok
    • Journal of Advanced Navigation Technology
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    • v.6 no.4
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    • pp.279-290
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    • 2002
  • In this paper, tapered shape of multiport power divider/combiner modified for 2 GHz range from the model published by [10] is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that the modified structure of power divider/combiner have improved return loss more than 20 dB and another 18 dB, respectively, at 2 GHz.

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