• 제목/요약/키워드: response devices

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Effect of electrode material under frequency response characteristics of AIN based FBAR devices (AIN 체적탄성파 소자의 주파수 응답특성에 대한 전극재료의 영향)

  • Kim, Bo-Hyun;Kim, Do-Ypung;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2005.07c
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    • pp.1865-1867
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    • 2005
  • Film bulk acoustic resonator (FBAR) devices which adopt an air-gap type (metai/AlN/metal/air/substrate) configuration are fabricated by a novel process. The newly fabricated resonator doesn't employ any supporting layer below it. FBAR devices with the air-gap type are also fabricated using the conventional method. The frequency response characteristics of all the devices fabricated are measured and compared, in terms of the kinds of top and bottom electrode materials. The results show that the better device performance of FBAR devices can be achieved by employing the proposed process.

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Seismic Isolation and Response Control of Buildings in Japan

  • Masahiko Higashino;Yoshihisa Kitamura;Nagahide Kani
    • International Journal of High-Rise Buildings
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    • v.12 no.4
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    • pp.299-306
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    • 2023
  • An overview of seismic isolation and structural control in Japan is presented. The paper includes a mention of the history of aseismic technology and the earthquake threat in Japan, summarizes the merits of seismic isolation and response control, and discusses the types of devices used and some recent project examples. The projects presented are mostly examples of response control used for high-rise buildings. These types of buildings are not amendable to seismic isolation, and are a challenge to applying damping devices, as their high aspect ratio means that their dominant deformation mode is bending. Japanese engineers have developed a range of unique techniques to apply response control to these types of structures. Concluding remarks discuss some of the current challenges to expanding the use of seismic isolation and response control technologies.

In-Cabinet Response Spectrum Comparison of Battery Charger by Numerical Analysis and Shaking Table Test (수치해석 및 진동대 실험을 통한 충전기의 캐비닛내부응답스펙트럼(ICRS) 결과 비교)

  • Lee, Sangjin;Choi, In-Kil;Park, Dong-Uk;Eem, Seung-Hyun
    • Transactions of the Korean Society of Pressure Vessels and Piping
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    • v.15 no.1
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    • pp.53-61
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    • 2019
  • The seismic capacity of electric cabinets in Nuclear Power Plants (NPPs) should be qualified before installation and be maintained during operation. However it can happen that identical devices cannnot be produced for replacement of devices mounted in electric cabinets. In case of when no In-Cabinet Response Spectrum (ICRS) is available for new devices, ICRS can be generated by using Finite Element Analysis (FEA). In this study we investigate structural response and ICRSs of battery charger which is supplied to NPPs. Test results on the battery charger are utilized in this study. The response is measured by accelerometers installed on the housing of the battery charger and local panels in the battery charger. Numerical analysis model is established based on resonant frequency search test results and validated by comparison with 2 types of earthquake testing results. ICRSs produced from the numerical model are compared with measured ICRSs in the seismic tests. Developed analysis model is a simple reduced model and anticipates ICRSs quite well as measured response in the tests overall despite of its structural limitation.

A NOTE ON PROTECTION OF PRIVACY IN RANDOMIZED RESPONSE DEVICES

  • SAHA AMITAVA
    • Journal of the Korean Statistical Society
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    • v.34 no.4
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    • pp.297-309
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    • 2005
  • We consider 'efficiency versus privacy-protection' problem concerned with several well-known randomized response (RR) devices to estimate pro­portion of people bearing a stigmatizing characteristic in a community. The literature of RR on respondent's privacy protection discusses only about response specific jeopardy measures. We propose a measure of jeopardy that is independent of the RR offered by the interviewee and recommend it for using as a technical characteristic of the RR device. For ensuring better cooperation from the interviewees this new measure that depends only on the design parameters of the RR devices may be disclosed to the respondents before producing the RR by implementing the randomization device.

Fabrication of AIN-based FBAR Devices by Using a Novel Process and Characterization of Their Frequency Response Characteristics in terms of Various Electrode Metals (새로운 공정을 이용한 AIN 체적 탄성파 소자의 제작 및 다양한 금속 전극막에 따른 주파수 응답 특성 분석)

  • Kim, Bo-Hyun;Park, Chang-Kyun;Park, Jin-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.5
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    • pp.915-920
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    • 2007
  • AIN-based film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration such as Mo/AIN/bottom-metal/Si are fabricated by employing a novel process. The proposed resonator structure does not require any supporting layer above the substrate, which leads to the reduction in energy loss of the resonators. For all the FBAR devices, the frequency response characteristics are measured and the device parameters, such as return loss and input impedance, are extracted from the frequency responses, and analyzed in terms of the various metals such as Al. Cu, Mo, W used in the bottom-electrode. The mass-loading effect caused by the used bottom-electrode metals is found to be the main reason for the difference revealed in the measured characteristics of the fabricated FBAH devices. The results obtained in this study also show that the degree of match in lattice constant and thermal expansion coefficient hetween piezoelectric layers and electrode metals is crucial to determine the device performance of FEAR.

The ethanol sensors made from α-Fe2O3 decorated with multiwall carbon nanotubes

  • Aroutiounian, Vladimir M.;Arakelyan, Valeri M.;Shahnazaryan, Gohar E.;Aleksanyan, Mikayel S.;Hernadi, Klara;Nemeth, Zoltan;Berki, Peter;Papa, Zsuzsanna;Toth, Zsolt;Forro, Laszlo
    • Advances in nano research
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    • v.3 no.1
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    • pp.1-11
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    • 2015
  • Thin film ethanol sensors made from ${\alpha}-Fe_2O_3$ decorated with multiwall carbon nanotubes(MWCNTs) were manufactured by the electron beam deposition method. The morphology of the decorated ${\alpha}-Fe_2O_3$/MWCNTs (25:1 weight ratios) nanocomposite powder was investigated using the scanning electron microscopy and X-ray diffraction techniques. The thickness of thin films has been determined from ellipsometric measurements. The response of manufactured sensors was investigated at different temperatures of the sensor work body and concentration of gas vapors. Good response of prepared sensors to ethanol vapors already at work body temperature of $150^{\circ}C$ was shown.

Tunable Electrical Properties of Aligned Single-Walled Carbon Nanotube Network-based Devices: Metallization and Chemical Sensor Applications

  • Kim, Young Lae;Hahm, Myung Gwan
    • Journal of the Korean Ceramic Society
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    • v.54 no.6
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    • pp.535-538
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    • 2017
  • Here we report the tunable electrical properties and chemical sensor of single-walled carbon nanotubes (SWCNTs) network-based devices with a functionalization technique. Formation of highly aligned SWCNT structures is made on $SiO_2/Si$ substrates using a template-based fluidic assembly process. We present a Platinum (Pt)-nanocluster decoration technique that reduces the resistivity of SWCNT network-based devices. This indicates the conversion of the semiconducting SWCNTs into metallic ones. In addition, we present the Hydrogen Sulfide ($H_2S$) gas detection by a redox reaction based on SWCNT networks functionalized with 2,2,6,6-Tetramethylpiperidine-1-oxyl (TEMPO) as a catalyst. We summarize current changes of devices resulting from the redox reactions in the presence of $H_2S$. The semiconducting (s)-SWCNT device functionalized with TEMPO shows high gas response of 420% at 60% humidity level compared to 140% gas response without TEMPO functionalization, which is about 3 times higher than bare s-SWCNT sensor at the same RH. These results reflect promising perspectives for real-time monitoring of $H_2S$ gases with high gas response and low power consumption.

Shock Response Analysis of Small Form Factor Optical Disk Drive using Finite Element Method (유한 요소법을 이용한 초소형 광디스크 드라이브의 충격해석)

  • 김시정;장영배;박노철;박영필
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.173-176
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    • 2004
  • Nowadays, mobile devices are very common equipments such as mobile phone, PDA, etc. These equipments need information storage devices. Optical storage devices have more advantages than other storage devices, but it is not free from shock situation like dropping by user's mistakes. A complete model of a Small Form Factor Optical(SFFO) disk drive subject to shock loads is developed to investigate the response of the pickup/disk interface. With this model, we can simulate the drop test and consider the matters of shock simulation using commercial software(Ansys/LS-Dyna).

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Study on High-Efficiency Driving of a Piezo Device Using Voltage Inversion Circuit (전압 극성 전환을 통한 피에조 소자의 에너지 회수형 구동 기법 연구)

  • Park, Han-Bin;Park, Jin-Ho;Hong, Sun-Ki;Kang, Taesam
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.12
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    • pp.1843-1847
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    • 2012
  • Piezo devices have large power density and simple structure. They can generate larger force than the conventional actuators. It has also wide bandwidth with fast response in a compact size. Thus the piezo devices are expected to be used widely in the future for small actuators with fast response time and large actuating force. However, the piezo actuators need high voltage with high driving current due to their large capacitive property. In this paper, we propose a simple method to drive piezo devices using voltage inversion circuit with coil inductance. Experiments with real circuit demonstrates that the proposed scheme can improve the energy efficiency very much.

The Characteristics of Molecular Conjugated Optical Sensor Based on Silicon Nanowire FET

  • Lee, Dong-Jin;Kim, Tae-Geun;Hwang, Dong-Hun;Hwang, Jong-Seung;Hwang, Seong-U
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.486-486
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    • 2013
  • Silicon nanowire devices fabricated by bottom-up methods are attracted due to their electrical, mechanical, and optical properties. Especially, to functionalize the surface of silicon nanowires by molecules has received interests. The changes in the characteristics of the molecules is delivered directly to the surface of the silicon nanowires so that the silicon nanowire can be utilized as an efficient read-out device by using the electronic state change of molecules. The surface treatment of the silicon nanowire with light-sensitive molecules can change its optical characteristics greatly. In this paper, we present the optical response of a SiNW field-effect-transistor (FET) conjugated with porphyrin molecules. We fabricated a SiNW FET and performed porphyrin conjugation on its surface. The characteristic and the optical response of the device shows a large difference after conjugation while there is not much change of the surface in the SEM observation. It attributed to the existence of few layer porphyrin molecules on the SiNW surface and efficient variation of the surface potential of the SiNW due to light irradiation.

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