• 제목/요약/키워드: resistors

검색결과 416건 처리시간 0.029초

Ni-Cr 박막 저항의 특성에 미치는 열처리 조건의 영향 (Effect of Annealing Conditions on Properties of Ni-Cr Thin Film Resistor)

  • 류승목;명성재;구본급;강병돈;류제천;김동진
    • 마이크로전자및패키징학회지
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    • 제11권1호
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    • pp.37-42
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    • 2004
  • 최근에 3 ㎓이상의 고주파용 전자부품과 소자의 제조에 낮은 저항온도계수(TCR)값과 높은 정밀도를 갖는 박막저항이 사용되고 있다. Ni-Cr 박막저항은 낮은 TCR 값과 저항에 대한 높은 안정성 때문에 저항 물질로 사용되는 가장 일반적인 물질이다. 본 연구에서는 $Ni_{72}Cr_Al_3Mn_4Si$(wt%)이 첨가된 우수한 저항특성을 갖는 S-type의 Evanohm 합금 타겟과 스퍼터링 장비를 이용하여 박막 저항을 제조하였다. 또한 열처리 조건을 $200^{\circ}C$, 300$300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$로 변화시키면서 고주파 박막 저항의 미세구조와 전기적 특성을 관찰하여 최상의 열처리 조건을 알아보았다.

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Ni-Cr 박막 저항의 특성에 미치는 열처리 조건의 영향 (Effect of Annealing Conditions on Properties of Ni-Cr Thin Film Resistor)

  • 류승록;명성재;구본급;강병돈;류재천;김동진
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2003년도 기술심포지움 논문집
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    • pp.145-150
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    • 2003
  • 최근에 3 GHz이상의 고주파용 전자부품과 소자의 제조에 낮은 TCR 값과 높은 정밀도를 갖는 박막저항이 사용되고 있다. Ni-Cr 박막저항은 낮은 TCR 값과 저항에 대한 높은 안정성 때문에 저항 물질로 사용되는 가장 일반적인 물질이다. 본 연구에서는 $Ni_{72}Cr_{20}Al_3Mn_4Si(wt\%)$ 첨가된 우수한 저항특성을 갖는 s-type의 Evanohm 합금 타겟과 스퍼터링 장비를 이용하여 박막 저항을 제조하였다. 또한 열처리 조건을 $200^{\circ}C,\;300^{\circ}C,\;400^{\circ}C,\;500^{\circ}C$로 변화시키면서 고주파 박막저항의 미세구조와 전기적 특성을 관찰하여 최상의 열처리 조건을 알아보았다.

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저가형 교류전동기 벡터제어 인버터를 위한 새로운 전류측정 방법 (A Novel Current Sensing Method for Low-Cost Vector-Controlled Inverter of AC Motor)

  • 이원일;윤덕용
    • 전기학회논문지
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    • 제62권7호
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    • pp.950-955
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    • 2013
  • This paper proposes a new low-cost current detection method to implement vector-controlled inverter of 3-phase induction motor or permanent-magnet synchronous motor using 2 shunt resistors instead of expensive Hall current sensors. The proposed method can detect perfect phase currents without current-immeasurable area in all operating conditions of motor. This method uses 2 shunt resistors in Hall current sensor positions conventionally used to detect phase currents. Therefore, it requires accurate analog differential amplifiers to detect voltages across shunt resistors at high electric potential to ground. We show the good solutions which are implemented by voltage-divider resistors networks and the instrumentation amplifiers using several Op Amps at cheap price. Computer simulations and experiments were performed to confirm the effectiveness of proposed method. These results show that proposed method can perfectly detect phase currents without current-immeasurable area in all operating conditions of motor.

$SnO_2$박막저항의 전기적 특성에 미치는 첨가제의 영향 (Effect of Dopants on Electrical Properties of $SnO_2$Thin Film Resistors)

  • 구본급;강병돈
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.658-666
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    • 2000
  • Sb and Sb-Fe doped SnO$_2$film resistors were prepared by spray pyrolysis technique. The effects of Sb and Sb-Fe addition on TCR and electrical properties of SnO$_2$film resistors were studied. Also the dependence of electrical properties on the substrate temperature and substrate-nozzle distance was investigated. The Sn-Sb system with 7.9 mol% SbCl$_3$(STO-406) and Sn-Sb-Fe systems with 7.3 mol% SbCl$_3$+7.3 mol% FeCl$_3$(STO-407) and with 3.4 mol% SbCl$_3$+7.7mol% FeCl$_3$(STO-408) were prepared. Both of the systems Sn-Sb and Sn-Sb-Fe represented nonlinearity of TCR with temperature. As the amount of Fe increased TCR was shifted to positive direction. Decreasing Sb or increasing Fe caused resistivity to increase. Also increasing Fe caused the crystallization degree of rutile structure in SnO$_2$film to decrease. The electrical resistivity decreased with increasing substrate temperature The resistivity decreased with increasing substrate-nozzle distance in the ranges from 15 to 25 cm and increased rapidly at the distance over 25cm.

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고정밀 레이저 가공 기술을 이용한 PRT 제작 및 특성 분석 (Fabrication and Analysis of Characteristics of PRT using High-fine Laser Trimming Technology)

  • 노상수;서정환;정귀상;김광호
    • 한국전기전자재료학회논문지
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    • 제16권1호
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    • pp.46-52
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    • 2003
  • In this paper, we fabricated PRT(platinum resistance thermometers) with the trimming technology using high fine laser system. U. V.(wavelength: 355nm) laser was mainly used for adjusting Pt thin films resistors to 100Ω at 0$^{\circ}C$. Internationally, the accepted A-class tolerance of temperature sensor is ${\pm}$0.06Ω at 0$^{\circ}C$. according to DIN EN 60751. The width of trimmed lines was about 10$\mu\textrm{m}$ and the best trimming conditions of Pt thin films were power : 37mW, frequency : 200Hz and bite size:1.5$\mu\textrm{m}$. And 96 resistors, fabricated by photolithography and etching process, have 79∼90Ω and 91∼102Ω as the proportion of 45.7% and 57.3%, respectively. As result of sitting Pt thin films resistors to the target value(109.73Ω at 25$^{\circ}C$), 82.3% of all resistors had the tolerance within ${\pm}$0.03Ω and the others(17.7%) were within ${\pm}$0.06Ω of A-class tolerance. The PRTs which wore fabricated in this research had excellent characteristics as follows; high accuracy, international standard TCR(temperature coefficient of resistance) value, long-term stability, wide temperature range, good linearity and repeatability, rapid response time, etc.

강성도 국부 변환 신축성 기판 위에 제작된 박막 트랜지스터 기반 변형률 센서 (Thin-Film Transistor-Based Strain Sensors on Stiffness-Engineered Stretchable Substrates)

  • 조영민;류경인;정성준
    • 센서학회지
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    • 제32권6호
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    • pp.386-390
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    • 2023
  • Stiffness-engineered stretchable substrate technology has been widely used to produce stretchable displays, transistors, and integrated circuits because it is compatible with various flexible electronics technologies. However, the stiffness-engineering technology has never been applied to transistor-based stretchable strain sensors. In this study, we developed thin-film transistor-based strain sensors on stiffness-engineered stretchable substrates. We designed and fabricated strain-sensitive stretchable resistors capable of inducing changes in drain currents of transistors when subjected to stretching forces. The resistors and source electrodes of the transistors were connected in series to integrate the developed stretchable resistors with thin-film transistors on stretchable substrates by printing the resistors after fabricating transistors. The thin-film transistor-based stretchable strain sensors demonstrate feasibility as strain sensors operating under strains of 0%-5%. This strain range can be extended with further investigations. The proposed stiffness-engineering approach will expand the potential for the advancement and manufacturing of innovative stretchable strain sensors.

동시 소성된 저항/저온 동시 소성 세라믹(LTCC) 이중층의 캠버에 영향을 미치는 인자 (Factors Influencing the Camber of Cofired Resistor/Low Temperature Cofired Ceramics (LTCC) Bi-Layers)

  • 홍옥연;민석홍
    • 한국재료학회지
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    • 제33권12호
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    • pp.537-549
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    • 2023
  • The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

연속 조성 확산 증착 방법을 통한 저항 온도 계수의 튜닝 (Tuning for Temperature Coefficient of Resistance Through Continuous Compositional Spread Sputtering Method)

  • 박지훈;선정우;최우진;진상준;김진환;전동호;윤생수;천재일;임진주;조욱
    • 한국전기전자재료학회논문지
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    • 제37권3호
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    • pp.323-327
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    • 2024
  • The low-temperature coefficient of resistance (TCR) is a crucial factor in the development of space-grade resistors for temperature stability. Consequently, extensive research is underway to achieve zero TCR. In this study, resistors were deposited by co-sputtering nickel-chromium-based composite compositions, metals showing positive TCR, with SiO2, introducing negative TCR components. It was observed that achieving zero TCR is feasible by adjusting the proportion of negative TCR components in the deposited thin film resistors within certain compositions. Additionally, the correlation between TCR and deposition conditions, such as sputtering power, Ar pressure, and surface roughness, was investigated. We anticipate that these findings will contribute to the study of resistors with very low TCR, thereby enhancing the reliability of space-level resistors operating under high temperatures.

션트저항을 이용한 3상 인버터의 전압 변조지수 증대 (Improvement of Modulation Index in 3-phase Inverters using Shunt Resistors)

  • 김정대;최종우
    • 전기학회논문지
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    • 제67권3호
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    • pp.374-382
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    • 2018
  • This paper has done a hardware-based approach to increase the modulation index in 3-phase inverters, unlike the conventional software algorithm-based approaches. The minimum required time to measure the currents in a three-phase inverters with shunt resistors has also been analyzed. By the analysis, the longest time in minimum required time is AD conversion time. To shorten the minimum required time, this paper proposed a sample-and-hold(S/H) circuit implemented at the inverter current signal output to retain the current signal. When the linear operation region of an inverter with S/H was compared with that without it, the modulation index was increased by 7.8 %. Inverters with S/H circuits can employ the traditional software algorithms, such as the voltage injection method or current restoration method, and it will yield further increase the modulation index.

Novel Filtering Power Divider with External Isolation Resistors

  • Lu, Yun-Long;Wang, Shun;Dai, Gao-Le;Li, Kai
    • ETRI Journal
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    • 제37권1호
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    • pp.61-65
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    • 2015
  • In this paper, a novel filtering power divider with external isolation resistors is presented. The proposed power divider can be considered as an integration of a bandpass filter and a Gysel power divider. Based on the circuit topology, a high-order filtering power divider can be easily realized. Odd- and even-mode models are employed to analyze the filtering and power splitting functions. For demonstration, a third-order filtering power divider operating at 1.5 GHz is designed and implemented. The measured results exhibit an isolation between the output ports that is better than 20 dB at around the center frequency.