• Title/Summary/Keyword: resistive loss

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Passive Damping Enhancement of Composite Beam Using Piezo Ceramic Connected to External Electrical Networks (외부 회로가 연결된 압전 세라믹을 이용한 복합재 보의 수동 감쇠 개선)

  • Yang, Seung-Man;Kim, Do-Hyung;Han, Jae-Hung;Lee, In
    • Composites Research
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    • v.12 no.2
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    • pp.1-9
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    • 1999
  • The piezoelectric material connected to external electric networks possesses frequency dependent stiffness and loss factor which are also affected by the shunting circuit. The external electric networks are generally specialized for two shunting circuits: one is the case of a resistor alone and the other is the combination of a resistor and an inductor. For resistive shunting, the material properties exhibit frequency dependency similar to viscoelastic materials, but are much stiffer and more independent of temperature. Shunting with a resistor and inductor introduces an electrical resonance, which can change the characteristics of structural resonance optimally in a manner analogous to a PMD (proof mass damper). Passive damping enhancement of composite beam using piezoelectric material connected to external electrical networks is achieved and presented in this paper.

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Design of the Resistive Mixer MMIC with high linearity and LO-RF isolation (고선형성과 높은 LO-RF 격리도를 갖는 새로운 구조의 저항성 Mixer MMIC 설계)

  • Lee, Kyoung-Hak
    • Journal of Satellite, Information and Communications
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    • v.9 no.2
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    • pp.7-11
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    • 2014
  • In this paper, we designed resistive MMIC mixer using $0.5{\mu}m$ p-HEMT process. This Mixer is designed to have a similar performance in -4 ~ 4 dBm local oscillator signal power level and to maintain a constant conversion loss and linear performance due to the variation of local signal. In order to have such characteristics, we designed new feedback circuit topology by using FET, and minimized performance change for LO signal power level variation, also obtain MMIC mixer characteristics which is able to apply in wideband. In the design result, When the LO signal power is -4 ~ 4 dBm, there was 6 dB conversion loss and it came up with the excellent result that IIP3 got over 30 dBm in 0.5 ~ 2.6GHz frequency band.

Fuzzy-PID Gain Scheduling Algorithm of Resistive Welder for Electronic Parts (전자부품용 저항용접기의 퍼지-PID 이득조정 알고리즘)

  • Park, Myung-Kwan;Lee, Jong-Woon
    • Proceedings of the KIEE Conference
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    • 2004.11c
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    • pp.114-116
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    • 2004
  • The temperature profile control issue in the resistive welder for the electronic parts is discussed. The average current of the welder tip depends on the phase(on-time) of the AC power and the tip temperature maintains or increases/decreases depending on the integral of the current square and heat loss, The basic PID control algorithm with thermo-couple feedback is difficult to track the temperature profile for various parts and optimal gain changes much. So constant gain PID algorithm is not enough to cover various electronic parts welding and a Fuzzy-PID automatic gain tuning algorithm is devised and added to conventional PID algorithm and this hybrid control architecture is implemented and the experimental results are shown.

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Reset-first Resistance Switching Mechanism of HfO2 Films Based on Redox Reaction with Oxygen Drift-Diffusion

  • Kim, Jong-Gi;Lee, Sung-Hoon;Lee, Kyu-Min;Na, Hee-Do;Kim, Young-Jae;Ko, Dae-Hong;Sohn, Hyun-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.286-287
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    • 2012
  • Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

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Design and Fabrication of Stratified Microwave Absorbing Structure Consisted of Glass/Epoxy - Resistive Sheet - Foam

  • Choi, Won-Ho;Shin, Jae-Hwan;Song, Tae-Hoon;Lee, Won-Jun;Kim, Chun-Gon
    • Composites Research
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    • v.27 no.6
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    • pp.225-230
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    • 2014
  • In this study, a novel microwave absorber which consists of a structural part, a resistive sheet, and a low dielectric layer is proposed. Unlike the conventional Salisbury screen, a newly proposed absorber is capable of a range of absorbing performance, from narrowband to broadband. In the case of the narrowband absorber, the fabricated absorber with optimized design parameters has a strong resonance at 9.25 GHz and reflection loss of -44 dB with satisfying the -10 dB absorption in whole X-band (8.2 GHz~12.4 GHz). For the broadband absorber design, the reflectivity was minimized in the considered frequency ranges. The designed absorber showed two weak resonances near 6.5 GHz and 16.5 GHz and satisfied the -10 dB absorption from C-band to Ku-band (4 GHz~18 GHz). The measured reflection loss of fabricated absorber was well matched with simulation results, though the measurement was only performed on X-band. For the Salisbury screen to be capable of broadband absorption, it should be stacked multiply in a structure known as the Jaumann absorber. However, for the microwave absorber presented here, broadband as well as narrowband capabilities can be implemented without a change of the structure.

The Desing of GaAs MESFET Resistive Mixer with High Linearity (선형성이 우수한 GaAs MESFET 저항성 혼합기 설계)

  • 이상호;김준수;황충선;박익모;나극환;신철재
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.10 no.2
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    • pp.169-179
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    • 1999
  • In this paper, a GaAs MESFET single-ended resistive mixer with high linearity and isolation is designed. The bias voltage of this mixer is applied only gate of GaAs MESFET to use the channel resistance. The LO is applied the gate and the RF is applied the drain through 7-pole hairpin bandpass filter to obtain the proper isolation thru LO-RF. The IF is extracted from the source with short circuit and lowpass filter. Using extracted equivalent circuits for LO and RF, conversion loss is calculated and compared with result of harmonic balance analysis. Measured conversion loss of this S-band down converter mixer is 8.2~10.5dB by considering the measured 3.0~3.4dB RF 7-pole hairpin bandpass filter loss and IP3in is 26.5dBm at Vg=-0.85~-1.0V in distortion performance.

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Low Power-loss Current Measurement Technique Using Resistive Sensor and Bypass Switch (바이패스 스위치와 저항센서를 이용한 저손실 전류 측정방법)

  • Lee, Hwa-Seok;Thayalan, I. Daniel Thena;Park, Joung-Hu
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.5
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    • pp.416-422
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    • 2012
  • This paper proposes a low power-loss current measurement using a resistor and bypass switch. Conventional current sensing method using a resistor has a disadvantage of power loss which degrades the efficiency of the entire systems. On the other hand, proposed measurement technique operating with bypass-switch connected in parallel with sensing resistor can reduce power loss significantly the current sensor. The propose measurement works for discrete-time sampling of current sensing. Even while the analog-digital conversion does not occur at the controller, the sensing voltage across the sensor still causes ohmic conduction loss without information delivery. Hence, the bypass switch bypasses the sensing current with a small amount of power loss. In this paper, a 90[W] prototype hardware has been implemented for photovoltaic MPPT experimental verification of the proposed low power-loss current measurement technique. From the results, it can be seen that PV power observation is successfully done with the proposed method.

Numerical Analysis of Loss Power Properties in the Near-Field Electromagnetic Wave Through A Microstrip Line for Multilayer Magnetic Films with Different Levels of Electrical Conductivity

  • Lee, Jung-Hwan;Kim, Sang-Woo
    • Journal of Magnetics
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    • v.13 no.3
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    • pp.92-96
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    • 2008
  • There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

Transport Loss Characteristic of the Bifilar Pancake Type Fault Current Limiting Coil using Coated Conductor (Coated Conductor를 사용한 무유도 팬케이크형 한류 코일의 통전 손실 특성)

  • Park, Dong-Keun;Bang, Joo-Seok;Yang, Seong-Eun;Ahn, Min-Cheol;Sim, Ki-Deok;Yoon, Yong-Soo;Nam, Kwan-Woo;Seok, Bok-Yeol;Ko, Tae-Kuk
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.3
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    • pp.21-25
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    • 2007
  • Superconducting fault current limiter (SFCL) is attractive apparatus to reduce fault current in power grid. Since it is applied to the alternating current (AC) power line, the SFCL has losses in the normal operation. Recently, coated conductor (CC) is noticeable material employed for resistive bifilar winding type SFCL in many research groups. Bifilar structure is expected to have low AC loss by magnetic field offset as compared with the single tape structure in the same length. This paper reports about characteristic of bifilar pancake type coil for SFCL application in AC loss aspect. The bifilar coil is wound using CC with facing on HTS sides each other. Transport AC loss measurement and characteristic analysis of the bifilar coil using CC have been performed at 77K. The test results are compared with the Norris equations and the test results of non-inductively wound paralleled solenoid type coil which is suggested and tested in this group at present.

내화설계의 성능규정화 추세에 관한 연구

  • Kim, Yeon-Gu;Park, Seung-In
    • Fire Protection Technology
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    • s.28
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    • pp.30-36
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    • 2000
  • This manuscript is based on the report "THE RESEARCH ON THE OBJECT TO BE FIRE RESISTIVE AND THOSE LIMITS" issued by FILK. With advancement of the life style recently. People seek for more comfort therefore the aspect of the residence is getting more complex. Meanwhile, the vital and property loss caused fire is getting higher. For the safe of the public welfare, these fire hazard should be controlled by governmental system. It will also be satisfactory if this small opinion could be helpful for the safe.

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