• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2000년도 High Temperature Superconductivity Vol.X
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• pp.298-303
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• 2000

We evaluated the electric properties of Bi-2223 jointed tapes processed by both resistive- and supercondcuting-joint methods. For the resistive-joint, filler materials of wood metal, Pb/Sn, In, and silver paste were used, whereas, for the superconductive-joint, the lap joint method were used. In the resistive-joint tape, it was observed that the electrical properties such as current transport property, n-value, and contact resistance of the tape were significantly related to the resistivity of filler materials. On the other hand, in the superconducting-joint tape, the current transport property was dependent on the uniaxial pressure. Specifically, the current transport property varied 50 to 80% with uniaxial pressure, probably due to the irregular microstructure in the transition region.

• 한국항행학회논문지
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• 제11권2호
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• pp.196-202
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• 2007

본 논문에서는 모서리 경계조건을 만족하는 접지된 유전체층 위의 저항띠 격자구조에 의한 TE(transverse electric)산란 문제를 수치해석 방법인 FGMM(Fourier-Galerkin Moment Method)를 이용하여 해석하였다. TE 산란에 대하여 유도되는 표면 전류밀도는 스트립 양 끝에서 0의 값이 기대되며, 이때 저항띠에 유도되는 표면 전류밀도는 차수가 1인 Gegenbauer (Ultraspherical) 다항식과 적절한 모서리 경계조건을 만족하는 함수의 곱의 급수로 전개하였다. 제안된 방법의 검증을 위하여 기존의 R = 100 ohms/square 및 완전도체 경우인 균일 저항율 R = 0에 대한 정규화된 반사전력의 수치결과는 기존의 논문들과 일치하였다.

• Journal of Advanced Marine Engineering and Technology
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• 제31권8호
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• pp.970-974
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• 2007

A mixer is a key component in the wireless communication systems. In this paper, we design a mixer which is used in a frequency modulated continuous wave(FMCW) radar system. The frequency sweep range of the radar is from 10 GHz to 11 GHz. The transmitted and received signals of the FMCW radar are applied to LO and RF ports of the mixer, respectively, but the frequency difference between the two signals, which is called "a beat frequency" is under a few KHz and depending on the distance to target. Thus the isolation between the LO and RF ports is very important factor to design this mixer. In this paper we propose a single balanced resistive mixer using GaAs MESFET for this application. We first design a single-ended type resistive mixer using a simulation tool, then design a balanced type to increase the LO-to-RF isolation of the mixer. We fabricated the mixer on the substrate of dielectric constant 10 and thickness 0.635 mm. The measured results show that the isolation and conversion loss of the mixer over the frequency band is 20dB and 10.5dB, respectively. The LO input power for operating the proposed mixer is +3dBm, which is lower than a general conventional mixer's LO power. The 1 dB compression point is 6dBm.

• Journal of Power Electronics
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• 제13권4호
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• pp.701-711
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• 2013

This paper takes into account the influence of the different impedances of distribution lines on power distribution among inverters when the inverters are paralleled with the droop control method. The impact of distribution lines on the power distribution of inverters can be divided into two aspects. Firstly, since the distributed generators are in low voltage grids, there is resistive impedance in the distribution lines, which will cause control coupling and reduce system stability. The virtual negative resistive impedance of inverters is adopted in this paper to neutralize the resistive element of distribution lines and thus make the distribution line impedance purely inductive. Secondly, after solving the resistive impedance problem, the difference in the inductive impedance value of distribution lines due to the low density of distributed generators will cause an unequal share of reactive power. With regards to this problem, modification is put forward for the droop control strategy to share the reactive power equally. The feasibility of the design is validated by simulation and experimental results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• 한국구조물진단유지관리공학회 논문집
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• 제18권1호
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• pp.128-137
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• 2014

내화뿜칠재는 주로 철골구조물 위에 시공하여 내화구조기준을 만족하기 위한 것이다. 국내에서는 원자력발전소를 비롯하여 철골구조물에 내화뿜칠재를 시공하여 왔지만, 재료특성 중 중요한 요건인 부착강도기준이 제정되어있지 않았다. 다만, 원자력발전소는 원전의 기준에 따라 부착강도 기준이 있었다. 본 논문에서는 변전소에 시공되는 내화뿜칠재의 부착강도 기준을 정하고자 하였다. 기준설정 방법은 현재 사용되는 제품으로 실험체를 제작하고, 변전소 환경에 따라 열화시키며 부착강도를 측정하고 구조물 내구연한 기간 동안 열화시킨 후 변전소에서 발생하는 충격하중 실험을 통하여 탈락여부를 평가하여 부착강도기준을 설정하였다. 본 논문에서의 부착강도는 시중에서 사용되는 제품을 기준으로 실험한 것으로 최소한의 값이라고 판단된다.

• 한국정보전자통신기술학회논문지
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• 제7권1호
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• pp.40-44
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• 2014

저항형 바이오 센서를 인터페이싱하기 위해 브릿지 저항 편차-주기 변환기를 제안한다. 이 변환기는 선형 OTA(linear operational transconductance amplifier)와 전류-제어 발진기(current-controlled oscillator)로 구성된다. 브릿지 옵셋저항이 $1k{\Omega}$일 때, 프리러닝 주기는 1.824 ms이다. 변환기의 변 환 감도는 $0-1.2{\Omega}$의 저항편 범위에서 $3.814ms/{\Omega}$이다. 변환 특성의 선형 에러는 ${\pm}0.004%$이내이다.

• Smart Structures and Systems
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• 제18권2호
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• pp.335-354
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• 2016

This contribution presents an extended one-dimensional theory for piezoelectric beam-type structures with non-ideal electrodes. For these types of electrodes the equipotential area condition is not satisfied. The main motivation of our research is originated from passive vibration control: when an elastic structure is covered by several piezoelectric patches that are linked via resistances and inductances, vibrational energy is efficiently dissipated if the electric network is properly designed. Assuming infinitely small piezoelectric patches that are connected by an infinite number of electrical, in particular resistive and inductive elements, one obtains the Telegrapher's equation for the voltage across the piezoelectric transducer. Embedding this outcome into the framework of Bernoulli-Euler, the final equations are coupled to the wave equations for the longitudinal motion of a bar and to the partial differential equations for the lateral motion of the beam. We present results for the wave propagation of a longitudinal bar for several types of electrode properties. The frequency spectra are computed (phase angle, wave number, wave speed), which point out the effect of resistive and inductive electrodes on wave characteristics. Our results show that electrical damping due to the resistivity of the electrodes is different from internal (=strain velocity dependent) or external (=velocity dependent) mechanical damping. Finally, results are presented, when the structure is excited by a harmonic single force, yielding that resistive-inductive electrodes are suitable candidates for passive vibration control that might be of great interest for practical applications in the future.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.207.1-207.1
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• 2013

Tantalum oxide has been extensively investigated as one of the promising Resistive switching materials applicable to Resistive Dynamic Access Memories. Impedance spectroscopy offers simultaneous measurements of electrical and dielectric information, separation of electrical origins among bulk, grain boundaries, and interfaces, and the monitoring of electrical components. Such benefits have been combined with the resistive states of resistive switching devices which can be described in terms of equivalent circuits involving resistors, capacitors, and inductors, The current work employed pulsed laser deposition in order to prepare the oxygen-deficient tantalum oxide. The fabricated devices were controlled between highresistance and low-resistance states in controlled current compliance modes. The corresponding electrical phenomena were monitored both in the dc-based current-voltage characteristics and in the ac-based impedance spectroscopy. The origins of the electrical switching are discussed towards optimized ReRAM devices in terms of interfacial effects.