• Title/Summary/Keyword: report channel

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Green Cooperative Sensing Scheme in Heterogeneous Networks

  • Shen, Lifei;Liu, Jian;Tan, Xinxin;Wang, Lei
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.12 no.2
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    • pp.550-565
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    • 2018
  • Cognitive radio technology is still the key technology of future mobile communication systems. Previous studies have focused on improving spectrum utilization and less energy consumption. In this paper, we propose an Overhead Reduced Scheme (ORS) for green cooperative spectrum sensing. Compared to traditional cooperative sensing scheme, ORS scheme divides the sensing time into three time slots and selects the best multi-mode user to report decisions. In consideration of reporting channel deviation, we derive closed-form expressions for detection probability and false alarm probability of ORS scheme based on Rayleigh fading channel. Simulation results show that ORS scheme can improve the perception accuracy while reducing the perceived delay and energy consumption in the process of perception, so as to realize the green communication.

Oligothiophene Derivatives Containing Alkylene Linkage as New Semiconductor for OTFT

  • Kim, Hyung-Sun;Son, Kyung-Hwa;Park, Jong-Won;Kim, Yun-Hi;Kwon, Soon-Ki;Lee, Mi-Do
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1370-1373
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    • 2005
  • Oligothiophene derivatives have been wellknown as an p-type channel $material.^1$ Here, we report novel oligothiophene derivative containing alkylene linkage as an p-type channel material. Oligothiophene derivative containing alkylene linkage BE4TH was synthesized and characterized. BE4TH was prepared by a palladium-catalyzed crosscoupling reaction via zinc-substituted thiophene. B4TH and BH4TH exhibited high thermal stability and at least one transition temperature.

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Effect of P-Base Region on the Transient Characteristics of 4H-SiC DMOSFETs (P형 우물 영역에 따른 4H-SiC DMOSFETs의 스위칭 특성 분석)

  • Kang, Min-Seok;Ahn, Jung-Jun;Sung, Bum-Sik;Jung, Ji-Hwan;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.352-352
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    • 2010
  • Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

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Unified Optimal Power Allocation Strategy for MIMO Candidates in 3GPP HSDPA

  • Kim, Sung-Jin James;Kim, Ho-Jin;Lee, Kwang-Bok
    • ETRI Journal
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    • v.27 no.6
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    • pp.768-776
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    • 2005
  • We compare the achievable throughput of time division multiple access (TDMA) multiple-input multiple-output (MIMO) schemes illustrated in the 3rd Generation Partnership Project (3GPP) MIMO technical report, versus the sum-rate capacity of space-time multiple access (STMA). These schemes have been proposed to improve the 3GPP high speed downlink packet access (HSDPA) channel by employing multiple antennas at both the base station and mobile stations. Our comparisons are performed in multi-user environments and are conducted using TDMA such as Qualcomm's High Data Rate and HSDPA, which is a simpler technique than STMA. Furthermore, we present the unified optimal power allocation strategy for HSDPA MIMO schemes by exploiting the similarity of multiple antenna systems and multi-user channel problems.

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Improved optical design and performances of Amon-Ra instrument energy channel

  • Seong, Se-Hyun;Hong, Jin-Suk;Ryu, Dong-Ok;Park, Won-Hyun;Lee, Han-Shin;Kim, Sug-Whan
    • Bulletin of the Korean Space Science Society
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    • 2010.04a
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    • pp.26.1-26.1
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    • 2010
  • In this report, we present newly improved optical design for the Amon-Ra energy channel and its optical performance. The design is optimized parametrically with emphasis on improved light concentration. And then its performances are computed, first, from a laboratory test simulation using laser method (wave optics approach) and, second, from an in-orbit radiative transfer simulation using IRT method with 3D Earth model (geometrical optics approach). Two simulation test results show clear evidence of energy concentration improvement.

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Clinical Report of Aural Rehabilitation in Unilateral Sharply Slop Sensorineural Hearing Loss with Tinnitus and Increased Sound Sensitivity (이명과 청각민감증을 동반한 편측 고음 급추형 감각신경성 난청의 청각 재활)

  • Heo, Seung-Deok;Kang, Myung-Koo;Ko, Do-Heung;Jung, Dong-Keun
    • Speech Sciences
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    • v.11 no.3
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    • pp.175-180
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    • 2004
  • In case of the hearing impairment with tinnitus and increased sound sensitivity, it is known that the patients tend to appeal the psychologically oriented social handicap rather than communication disability. The audiologist who is responsible for such patients in aural rehabilitation should pay special attention to the counseling techniques including tinnitus retain therapy (TRT), ear protector, noise generator, or specific acoustic training based on close cooperation and rapport. And then the audiologist should try to lessen their reaction to the tinnitus by using a hearing aid. This therapies tries to focus not a. total approach but a treatment to lessen the severity of tinnitus. This paper as a case report that a unilateral sharply slopped sensorineural hearing impaired person with tinnitus and increased sound sensitivity by using four channel digital signal processing (DSP) hearing aid with programming increment at low level (PILL).

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Acute Pulmonary Edema and Congestion in the Right Upper Lobe after Waterston-Cooley Shunt for Tetralogy of Fallot: A Case Report (활로4증후에서 Waterston-Cooley 문합수술후에 발생한 우상엽 폐수종: 1례 보고)

  • 송충웅
    • Journal of Chest Surgery
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    • v.10 no.1
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    • pp.113-117
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    • 1977
  • The tetralogy of Fallot is one of the most frequent and serious congenital cardiac malformation accompanied cyanosis. For relief of cyanosis, the Waterston operation is a successful, palliative procedure in infant & young child under age of five with obstructive lesions of the right: side of the heart who require a systemic-pulmonary arterial shunt for survival. A patient, aged 3 and weighing 13 kg., who had been cyanotic since one month after birth,. was admitted to the University of Severance Hospital under a diagnosis of tetralogy of Fallot, The side to side anastomosis between the right pulmonary artery & the ascending aorta was performed in March 1976. The anastomotic channel was made only 4 ram. in diameter, thereafter massive unilateral pulmonary congestion on the side of the anastomosis developed shortly after operation. And the. patient died of congestive heart failure within a hour. And so the purpose of this report is describe the immediate & late effect of systemic-pulmonary shunt for T.O.F. with review of literatures.

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Effective structure of electron injection from ITO bottom cathode for inverted OLED

  • Chu, Ta-Ya;Chen, Szu-Yi;Chen, Jenn-Fang;Chen, Chin H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.972-974
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    • 2005
  • For display drivers employ typically a-Si n-channel field effect transistors, they require an inverted OLED structure with a cathode as the bottom contact. ITO is regarded as the bottom cathode and can be applied to large size AM-OLED and transparent inverted OLEDs. We report the effective structure to improve the efficiency of electron injection from ITO cathode to $Alq_3$. We report the effective structure to improve the efficiency of electron injection from ITO cathode to Alq3 and studied the current density-voltage characteristics of trilayer ($Alq_3-LiF-Al$), LiF and Mg inserted between ITO and $Alq_3$, respectively. We discovered that 1 nm Mg afforded the highest efficiency.

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Orthogonal Signaling-based Sensing Data Reporting for Cooperative Spectrum Sensing in Cognitive Radio

  • Ko, Jae-Hoon;Kwon, Soon-Mok;Kim, Chee-Ha
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.3A
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    • pp.287-295
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    • 2011
  • Cognitive radio (CR) features opportunistic access to spectrum when licensed users (LU) are not operating. To avoid interference to LU, cognitive users (CU) need to perform spectrum sensing. Because of local shadowing, fading, or limited sensing capability, it is suggested that multiple CUs cooperate to detect LU. In cooperative spectrum sensing, CUs should exchange their sensing data with minimum bandwidth and delay. In this paper, we introduce a novel method to efficiently report sensing data to the central node in an infrastructured OFDM-based CR network. All CUs simultaneously report their sensing data over unique and orthogonal signals on locally available subcarriers. By detecting the signals, the central node can determine subcarrier availability for each CU. Implementation challenges are identified and then their solutions are suggested. The proposed method is evaluated through simulation on a realistic channel model. The results show that the proposed method is feasible and efficient.

2D(Dimension) Quantum Mechanical Modeling and Simulation : FinFET (2차원 양자 역학적 모델링 및 시뮬레이션 : FinFET)

  • 김기동;권오섭;서지현;원태영
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.775-778
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    • 2003
  • In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10~35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

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