• Journal of the Optical Society of Korea
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• 제4권1호
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• pp.11-13
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• 2000

We experimentally measured the cold cavity loss of a mode-locked erbium-doped fiber ring laser in situ by using the relaxation oscillation frequency method. The relaxation oscillation frequency is measured for various pumping powers and the data is fitted by the least squares method with a theoretical curve of parameters including the cavity loss. We obtained a cavity loss of 15.3$\pm$0.5 dB which was found to agree with the results of direct transmission loss measurements.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.163-165
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• 2012

Impedance spectroscopy informs electrical properties of materials as accumulated charges, contact status between electrode and organic materials. We carried out impedance spectroscopy of organic light-emitting diodes as ITO/Alq3(60 nm)/Al on temperatures from 10 K to 300 K. The result described Z'-Z" plot, cole-cole plot and dielectric relaxation time τ. Z'-Z" plot means that real and imaginary part of materials in organic and electrode by frequencies and temperature. Z' as real part of impedance by applied frequency depending on temperature shows the plateau in low frequency region as Rs+ Rp and over 100 kHz in high frequency region as Rs. Cole-cole plot shows resistance of materials in equivalent circuit of the device by temperatures. And equivalent circuit and dielectric relaxation could be accomplished by using the complex impedance analysis.

• 한국전기전자재료학회논문지
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• 제11권1호
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

• 한국전자파학회논문지
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• 제26권9호
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• pp.798-805
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• 2015

본 논문에서는 랜덤 수 생성 회로를 통해 Relaxation Oscillator의 주파수를 불규칙하게 변환하여 EMI Noise를 최소화하는 방법을 제시한다. 또한, DC-DC Converter에 이 기법이 적용되었을 때의 효과와 이 결과가 RF Receiver system에 미치는 효과를 Noise 측면에서 연구하였다. 제안하는 Relaxation Oscillator 출력 중심주파수는 7.9 MHz이고, 온도보상기법을 적용하여 온도변화에 따라 주파수가 보상되도록 설계하였다. 이 칩은 $0.18{\mu}m$ 공정으로 설계하였고, 칩의 면적은 $220{\mu}m{\times}280{\mu}m$이다. 전류 소모는 공급전압인 1.8 V에서 $500{\mu}A$이다.

• Bulletin of the Korean Chemical Society
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• 제22권11호
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• 대한원격탐사학회지
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• 제20권4호
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• pp.275-288
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• 2004

이 논문은 다중 센서 원격탐사 화상의 분류를 위해 퍼지 논리 융합과 결합된 relaxation labeling 방법을 제안하였다. 다중 센서 원격탐사 화상의 융합에는 퍼지 논리를, 분광정보와 공간정보의 융합에는 반복적인 relaxation labeling 방법을 적용하였다. 특히 반복적 relaxation labeling 방법은 공간정보의 이용에 따른 분류 화소의 변화양상을 얻을 수 있는 장점이 있다. 토지 피복의 감독 분류를 목적으로 광학 화상과 다중 주파수/편광 SAR 화상에 제안 기법을 적용한 결과, 다중 센서 자료를 이용하고 공간정보를 함께 결합하였을 때 향상된 분류 정확도를 얻을 수 있었다.

• 약학회지
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• 제41권3호
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• pp.370-380
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• 1997

The role of nitric oxide (NO) on the non-adrenergic non-cholinergic (NANC) relaxations induced by the short and prolonged electrical field stimulation (EFS) has been studied in the rabbit corpus cavernosum. In the presence of atropine and guanethidine the prolonged EFS (2-16 Hz) of corpus cavernosal strips precontracted with phenylephrine produced frequency-dependent relaxations, which were abolished by tetrodotoxin as shown in the relaxations induced gy the short EFS, indicating that their orgin is NANC nerve stimulation. $N^G$-nitro-L-arginine (L-NNA), inhibitor of nitirc oxide synthase, caused a concentration-dependent inhibition to the NANC relaxation, and at 100 M L-NNA the relaxation were virtually abolished. The inhibitory effect of L-NNA was reversed by L-arginine. Hemoglobin abolished the relaxations to NO and also caused a concentration-dependent inhibition of the NANC relaxation. The hemoglobin-resistant relaxation induced by EFS was eliminated by L-NNA. Methylene blue significantly reduced the NANC relaxation in a conentration-dependent manner. The NANC relaxation was not affected by a VIP-inactivating pepridase, alpha0chymotrypsin, whereas VIP-induced relaxation was completely abolished. NO- and VIP-induced relaxation were not affected by L-NNA. These results indicate that the NANC relaxation induced by prolonged EFS of the rabbit corpus cavernosum is mediated by NO-guanosine 3',5'-cyclic monophosphate pathway as shown in the relaxation induced by the short EFS, and that VIP release is not essential for the NANC relaxation of the rabbit corpus cavernosum and VIP is not involved the generation fo NO.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권10호
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• 반도체디스플레이기술학회지
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• 제5권4호
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• Bulletin of the Korean Chemical Society
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• 제18권7호
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• pp.715-719
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• 1997

In order to study the dielectric properties of the oriental lacquer films, three different films have been prepared differing purification and curing procedures. Dielectric properties were measured in the frequency range of 1 Hz to 105 Hz at various temperatures between - 50 ℃ and 150 ℃. The DEA using 1 Hz showed that glass transition and secondary relaxation temperatures of oriental lacquer film are very time dependent. In addition, the frequency-independent negative peak between 25 ℃ and 45 ℃ was observed, which could represent the formation of crosslink by laccase enzyme during heating. On the contrary, the high temperature cured film showed a hardly noticeable negative peak at the temperature range. The relationship between thermodynamic properties and chemical structures has been discussed based on the analysis of the dielectric relaxation behavior using the Cole-Cole plot and the dielectric relaxation intensity.