• Journal of the Optical Society of Korea
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• v.4 no.1
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• pp.11-13
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• 2000

We experimentally measured the cold cavity loss of a mode-locked erbium-doped fiber ring laser in situ by using the relaxation oscillation frequency method. The relaxation oscillation frequency is measured for various pumping powers and the data is fitted by the least squares method with a theoretical curve of parameters including the cavity loss. We obtained a cavity loss of 15.3$\pm$0.5 dB which was found to agree with the results of direct transmission loss measurements.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.163-165
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• 2012

Impedance spectroscopy informs electrical properties of materials as accumulated charges, contact status between electrode and organic materials. We carried out impedance spectroscopy of organic light-emitting diodes as ITO/Alq3(60 nm)/Al on temperatures from 10 K to 300 K. The result described Z'-Z" plot, cole-cole plot and dielectric relaxation time τ. Z'-Z" plot means that real and imaginary part of materials in organic and electrode by frequencies and temperature. Z' as real part of impedance by applied frequency depending on temperature shows the plateau in low frequency region as Rs+ Rp and over 100 kHz in high frequency region as Rs. Cole-cole plot shows resistance of materials in equivalent circuit of the device by temperatures. And equivalent circuit and dielectric relaxation could be accomplished by using the complex impedance analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.1
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• pp.41-47
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• 1998

The (Sr$_1$-\ulcorner.Ca\ulcorner)TiO$_3$(0.05 x 0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[$^{\circ}C$] in a reducing atmosphere($N_2$gas). After being fired in a reducing atmosphere, metal oxides(CuO) was painted on the both surface of the specimens to diffuse to the grain boundary. The capacitance changes slowly and almost linearly in the temperature region of -40~+85[$^{\circ}C$]. The capacitance characteristics appears a stable value within $\pm$10[%]. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 10\ulcorner[Hz]. The capacitance is almost unchanged below about 20[V] but it decrease slowly over 20[V]. The voltage-current characteristics of specimens observed in the temperature range of 25~125[$^{\circ}C$] as the current increased appears that it is due to space charge condensed to interface between grain and grain boundary.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.798-805
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• 2015

This paper proposes Relaxation Oscillator with Random Number Generator to minimize electromagnetic interference (EMI) noise. DC-DC Converter with Relaxation Oscillator is presented how much spurious noise effects to RF Receiver system. The main frequency of the proposed Relaxation oscillator is 7.9 MHz to operate it and add temperature compensation block to be applied to the frequency compensation in response to temperature changes. The DC-DC Converter Spurious noise is reduced up to 20 dB through changing frequency randomly. It is fabricated in $0.18{\mu}m$ CMOS technology. The active area occupies an area of $220{\mu}m{\times}280{\mu}m$. The supply voltage is 1.8 V and current consumption is $500{\mu}A$.

• Bulletin of the Korean Chemical Society
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• v.22 no.11
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• pp.1231-1235
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• 2001

Pseudotetragonal ZrO0.75S whose space group is P212121 was synthesized and the cell dimensions were a=5.110(2) $\AA$, b=5.110(7) $\AA$, and c=5.198(8) $\AA.$ The space group P212121 seems to be resulted from lowering the symmetry of cubic ZrOS structure with P213 space group by lattice distortion due to the oxygen defects. In the distorted structure, bond shortening between metal-nonmetal by reduction of cell volume and alternation of Zr-Zr distance were observed. Dielectric constant and loss data of the bulk material in temperature range -170 to 20 $^{\circ}C$ and frequency range 50 Hz to 1 MHz showed that there was dielectric transition at around -70 $^{\circ}C$ originated from the relaxation of Zr-S segment. Comparing with ZrO2 exhibited the dielectirc constants, 9.0 at room temperature, ZrO0.75S showed high dielectric constant, k = 200.2 at 100 kHz. The activation energy of relaxation time due to dielectric relaxation of Zr-S was 0.47 eV (11.3 kcal/mole). According to the impedance spectra, ZrO0.75S showed more parallel circuit character between the resistance and capacitance components at the temperature (-70 $^{\circ}C)$ that the Zr-S dielectric relaxation was observed.

• Korean Journal of Remote Sensing
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• v.20 no.4
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• pp.275-288
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• 2004

This paper presents a fuzzy relaxation labeling approach incorporated to the fuzzy logic fusion scheme for the classification of multi-sensor remote sensing images. The fuzzy logic fusion and iterative relaxation labeling techniques are adopted to effectively integrate multi-sensor remote sensing images and to incorporate spatial neighboring information into spectral information for contextual classification, respectively. Especially, the iterative relaxation labeling approach can provide additional information that depicts spatial distributions of pixels updated by spatial information. Experimental results for supervised land-cover classification using optical and multi-frequency/polarization images indicate that the use of multi-sensor images and spatial information can improve the classification accuracy.

• YAKHAK HOEJI
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• v.41 no.3
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• pp.370-380
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• 1997

The role of nitric oxide (NO) on the non-adrenergic non-cholinergic (NANC) relaxations induced by the short and prolonged electrical field stimulation (EFS) has been studied in the rabbit corpus cavernosum. In the presence of atropine and guanethidine the prolonged EFS (2-16 Hz) of corpus cavernosal strips precontracted with phenylephrine produced frequency-dependent relaxations, which were abolished by tetrodotoxin as shown in the relaxations induced gy the short EFS, indicating that their orgin is NANC nerve stimulation. $N^G$-nitro-L-arginine (L-NNA), inhibitor of nitirc oxide synthase, caused a concentration-dependent inhibition to the NANC relaxation, and at 100 M L-NNA the relaxation were virtually abolished. The inhibitory effect of L-NNA was reversed by L-arginine. Hemoglobin abolished the relaxations to NO and also caused a concentration-dependent inhibition of the NANC relaxation. The hemoglobin-resistant relaxation induced by EFS was eliminated by L-NNA. Methylene blue significantly reduced the NANC relaxation in a conentration-dependent manner. The NANC relaxation was not affected by a VIP-inactivating pepridase, alpha0chymotrypsin, whereas VIP-induced relaxation was completely abolished. NO- and VIP-induced relaxation were not affected by L-NNA. These results indicate that the NANC relaxation induced by prolonged EFS of the rabbit corpus cavernosum is mediated by NO-guanosine 3',5'-cyclic monophosphate pathway as shown in the relaxation induced by the short EFS, and that VIP release is not essential for the NANC relaxation of the rabbit corpus cavernosum and VIP is not involved the generation fo NO.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.504-508
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• 2001

The$(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode $(Pt-TiN /SiO_2Si)$ using RF sputtering method at various deposition temperature. The crystallinity of thin films was increased with increased of deposition temperature n the temperature range of 200~500 $[^{\circ}C]$. The capacitance changes almost linearly in temperature ranges of -80~+90$[^{\circ}C]$. All SCT thin films used in the study the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature.

• Journal of the Semiconductor & Display Technology
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• v.5 no.4 s.17
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• pp.5-9
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• 2006

The SCT thin films are deposited on Pt-coated electrode($Pt/TiN/SiO_2/Si$) using RF sputtering method with Sr/Ca ratio. The maximum grain of thin films is obtained by ratio of Ca at 15 mol%. The dielectric constant was increased with increasing the ratio of Ca, while it was decreased if the ratio of Ca exceeded over 15 mol%. The dielectric constant changes almost linearly in temperature ranges of $-80{\sim}+90$. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200 kHz. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the measuring temperature increases.

• Bulletin of the Korean Chemical Society
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• v.18 no.7
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• pp.715-719
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• 1997

In order to study the dielectric properties of the oriental lacquer films, three different films have been prepared differing purification and curing procedures. Dielectric properties were measured in the frequency range of 1 Hz to 105 Hz at various temperatures between - 50 ℃ and 150 ℃. The DEA using 1 Hz showed that glass transition and secondary relaxation temperatures of oriental lacquer film are very time dependent. In addition, the frequency-independent negative peak between 25 ℃ and 45 ℃ was observed, which could represent the formation of crosslink by laccase enzyme during heating. On the contrary, the high temperature cured film showed a hardly noticeable negative peak at the temperature range. The relationship between thermodynamic properties and chemical structures has been discussed based on the analysis of the dielectric relaxation behavior using the Cole-Cole plot and the dielectric relaxation intensity.