• Title/Summary/Keyword: regulating gate

Search Result 13, Processing Time 0.022 seconds

Association of Insulin-like growth factor binding protein 2 genotypes with growth, carcass and meat quality traits in pigs

  • Prasongsook, Sombat;Choi, Igseo;Bates, Ronald O.;Raney, Nancy E.;Ernst, Catherine W.;Tumwasorn, Sornthep
    • Journal of Animal Science and Technology
    • /
    • v.57 no.9
    • /
    • pp.31.1-31.11
    • /
    • 2015
  • Background: This study was conducted to investigate the potential association of variation in the insulin-like growth factor binding protein 2 (IGFBP2) gene with growth, carcass and meat quality traits in pigs. IGFBP2 is a member of the insulin-like growth factor binding protein family that is involved in regulating growth, and it maps to a region of pig chromosome 15 containing significant quantitative trait loci that affect economically important trait phenotypes. Results: An IGFBP2 polymorphism was identified in the Michigan State University (MSU) Duroc ${\times}$ Pietrain $F_2$ resource population (n = 408), and pigs were genotyped by MspI PCR-RFLP. Subsequently, a Duroc pig population from the National Swine Registry, USA, (n = 326) was genotyped using an Illumina Golden Gate assay. The IGFBP2 genotypic frequencies among the MSU resource population pigs were 3.43, 47.06 and 49.51 % for the AA, AB and BB genotypes, respectively. The genotypic frequencies for the Duroc pigs were 9.82, 47.85, and 42.33 % for the AA, AB and BB genotypes, respectively. Genotype effects (P < 0.05) were found in the MSU resource population for backfat thickness at $10^{th}$ rib and last rib as determined by ultrasound at 10, 13, 16 and 19 weeks of age, ADG from 10 to 22 weeks of age, and age to reach 105 kg. A genotype effect (P < 0.05) was also found for off test Longissimus muscle area in the Duroc population. Significant effects of IGFBP2 genotype (P < 0.05) were found for drip loss, 24 h postmortem pH, pH decline from 45 min to 24 h postmortem, subjective color score, CIE $L^*$ and $b^*$, Warner-Bratzler shear force, and sensory panel scores for juiciness, tenderness, connective tissue and overall tenderness in MSU resource population pigs. Genotype effects (P < 0.05) were found for 45-min pH, CIE $L^*$ and color score in the Duroc population. Conclusions: Results of this study revealed associations of the IGFBP2 genotypes with growth, carcass and meat quality traits in pigs. The results indicate IGFBP2 as a potential candidate gene for growth rate, backfat thickness, loin muscle area and some pork quality traits.

Analysis on the Effect of Water Intake Depending on the Gate Location at the Downstream of Regulating Dam (방류수문 위치에 따른 조정지댐 하류의 취수영향 검토)

  • Kim, Young-Sung;Lee, Hyun-Seok;Yang, Jae-Rheen;Koh, Deuk-Koo
    • Proceedings of the Korea Water Resources Association Conference
    • /
    • 2007.05a
    • /
    • pp.831-835
    • /
    • 2007
  • 금강은 우리나라 중부 내륙에서 서해로 흐르는 유로연장 401km, 유역면적이 전 국토면적의 약 10%에 해당하는 $9,886km^2$에 이르는 남한의 5대강 중 하나이다. 1981년, 이 강의 하구로부터 150km 상류지점인 대전시 동북쪽 16km, 청주시 남쪽 16km의 대전시와 충청북도가 만나는 지점에 대청다목적댐이 준공되었다. 대청다목적댐은 높이 72m, 길이 495m, 체적 123만$4,000m^3$의 콘크리트 중력식 댐과 석괴식 댐으로 구성된 복합형 댐으로서, 이 댐의 주요시설로는 저수용량 14억9,000만$m^3$의 본 댐과 조정지 댐이 있다. 그 후 1992년에는 대청 조정지 댐 하류 200m 지점에 현도 지방 산업단지 취수장(시설용량: $17,600m^3$/일)이 건설되었으며, 통상 하루 약 7,500톤의 물을 인근의 공단에 공급해오고 있다. 하지만 최근, 취수량이 급격히 감소됨에 따라, 인근 공단으로의 물 공급에 많은 어려움이 발생하고 있다. 이에 대한 대처 방안으로서 한국수자원공사는 취수장 관리자의 요구에 따라 조정지 댐 방류 수문 위치조정 및 방류량 조절 등의 조치를 취하고 있지만, 그 효과는 정량적으로 검토되어지지 않았다. 그러므로 본 연구에서는 위에서 명기한 조치의 실효성을 파악 하고자, 수문의 위치변화에 따른 취수구 부근의 수리특성을 조사하였다. 구체적인 조사항목은 다음과 같다. 첫째, 하천용 유량측정장비 (StreamPro ADCP (Teledyne RD Instruments))를 이용한 방류구와 취수구 사이의 유량 조사 둘째, 다 항목 수질 및 3차원 유속 측정장비 (ADV6600 (Sontek / YSI, Inc.))를 이용한 취수구 앞에서의 유속, 유향 및 수위변동 조사 셋째, 수위계 (Orphimedes (OTT MESSTECHNIK GmbH & Co. KG)) 및 파고계 (Compact-WH (Alec Electronics Co., Ltd.))를 이용한 하천을 횡단하는 취수구 좌 우 지점에서의 수위변동 모니터링 그 결과 방류수문의 위치변화에 따른 취수구 인근의 수리학적 특성은 조정지 댐의 방류수문으로부터 약 100 - 150 m 하류의 횡단면에서는 유속분포의 차이가 발견 되었으나 하류로 흐름이 진행됨에 따라 그 차이는 감쇄되고 약 200m 떨어진 취수구 앞의 횡단면에서는 유속분포가 거의 동일함을 알 수 있었다.

  • PDF

Process Optimization of PECVD SiO2 Thin Film Using SiH4/O2 Gas Mixture

  • Ha, Tae-Min;Son, Seung-Nam;Lee, Jun-Yong;Hong, Sang-Jeen
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.434-435
    • /
    • 2012
  • Plasma enhanced chemical vapor deposition (PECVD) silicon dioxide thin films have many applications in semiconductor manufacturing such as inter-level dielectric and gate dielectric metal oxide semiconductor field effect transistors (MOSFETs). Fundamental chemical reaction for the formation of SiO2 includes SiH4 and O2, but mixture of SiH4 and N2O is preferable because of lower hydrogen concentration in the deposited film [1]. It is also known that binding energy of N-N is higher than that of N-O, so the particle generation by molecular reaction can be reduced by reducing reactive nitrogen during the deposition process. However, nitrous oxide (N2O) gives rise to nitric oxide (NO) on reaction with oxygen atoms, which in turn reacts with ozone. NO became a greenhouse gas which is naturally occurred regulating of stratospheric ozone. In fact, it takes global warming effect about 300 times higher than carbon dioxide (CO2). Industries regard that N2O is inevitable for their device fabrication; however, it is worthwhile to develop a marginable nitrous oxide free process for university lab classes considering educational and environmental purpose. In this paper, we developed environmental friendly and material cost efficient SiO2 deposition process by substituting N2O with O2 targeting university hands-on laboratory course. Experiment was performed by two level statistical design of experiment (DOE) with three process parameters including RF power, susceptor temperature, and oxygen gas flow. Responses of interests to optimize the process were deposition rate, film uniformity, surface roughness, and electrical dielectric property. We observed some power like particle formation on wafer in some experiment, and we postulate that the thermal and electrical energy to dissociate gas molecule was relatively lower than other runs. However, we were able to find a marginable process region with less than 3% uniformity requirement in our process optimization goal. Surface roughness measured by atomic force microscopy (AFM) presented some evidence of the agglomeration of silane related particles, and the result was still satisfactory for the purpose of this research. This newly developed SiO2 deposition process is currently under verification with repeated experimental run on 4 inches wafer, and it will be adopted to Semiconductor Material and Process course offered in the Department of Electronic Engineering at Myongji University from spring semester in 2012.

  • PDF