• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.1626-1626
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• 2001

In this study, a newly constructed optical measurement system, whose main components were a parametric tunable laser and a near infrared photoelectric multiplier, was applied to detection of the information for the inside of Satsuma mandarin using time-of-flight near infrared spectroscopy (TOF-NIRS). The combined effects on the time resolved profile of sample diameter, sugar content, the wavelength of the laser beam, and the detection position of transmitted light were investigated in detail. The samples used were Satsuma mandarin (Citrus unshu $M_{ARC}$.) (location: Wakayama, Japan) having the diameters of 50-84 mm. The sugar content measured by a refractometer varied from 9.9 to 16.3 Brix%. Equator of sample was irradiated vertically with the pulsed laser, and transmitted output power was measured on the restricted position of the equator using the optical fiber cable. The sampling time and the number of averaging the output power were 100 ns and 100 times, respectively. The variation of the attenuance of peak maxima At, the time delay of peak maxima $\Delta$t and the variation of full width at half maximum Δw were strongly dependent on the detection position and the wavelength of the laser beam. At, $\Delta$t and $\Delta$w increased gradually as the sample diameter increased to be much absorbed and vigorously scattered. On the other hand, each optical parameter had a tendency to increase as the sugar content increased. Such behavior was remarkable when the transmitted light was detected at the side face of a sample. When we apply TOF-NIRS to detection of the information for the inside of fruit with high moisture content like Satsuma mandarin, it is very important to give attention to the difference in the scattered light within tissues and the semi-straightly propagated light. Furthermore, we tried to express the resulting phenomena by using a model samples composed of water, sucrose, and milk. The variation of the time resolved profile is strongly governed by the combination of the light absorption component, scattering medium, and refractive index.

• Journal of Software Assessment and Valuation
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• v.16 no.1
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• pp.55-63
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• 2020

Lasers for optical broadband communication systems should have excellent frequency selectivity and modal stability. DFB lasers have low lasing frequency shift during high speed current modulation. In this paper, when a refractive index grating and a gain grating are simultaneously present in a DFB laser having a wavelength of 1.55 ㎛, the dielectric film is coated so that reflection does not occur on the right mirror surface, so that ρ_r=0. For the first mode, which requires a minimum gain at the threshold, the beam distribution of the oscillation mode in the longitudinal direction and the radiated power ratio P_l/P_r were analyzed and compared for the cases of the phase of ρ_l=π and π/2. If the phase of ρ_l=π, in order to obtain a low threshold current and high frequency stability, κL should be greater than 8. In the case of the phase of ρ_l=π/2, for low threshold current, κL is necessary to be 1.0, where the oscillation frequency coincides with the lattice frequency. DFB lasers with an anti-reflection coated mirror have excellent mode selectivity than 1.55um DFB lasers with two mirror facets

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.126-126
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• 2011

수직으로 정렬된 1차원 ZnO nanorod arrays (NRAs)는 효율적인 반사방지 특성의 기하학적 구조를 갖고 있어, 크기와 모양 그리고 정렬형태의 다양한 설계를 통해 빛의 흡수율과 광 추출효율을 증가시켜 광전소자 및 태양광 소자의 성능을 향상시킬 수 있으며, 최근 이러한 연구에 대한 관심이 집중되고 있다. 본 연구에서는 ZnO NRAs의 넓은 표면적과 불연속적인 독특한 표면을 활용하여 광학적 특성을 효과적으로 개선하였다. 실험을 위해, thermal evaporator를 사용하여 Au와 Ag 그리고 e-beam evaporator를 사용하여 $SiO_2$를 ZnO NRAs 표면에 여러 가지 조건으로 증착하여, 독특한 계층 나노구조의 형성과 광학적 특성을 관찰하였다. 표면 roughness가 큰 FTO/glass 위에 수열합성법을 통해 끝이 뾰족하고, 비스듬히 정렬된 ZnO nano-tip array에 Au를 증착할 경우 ZnO/Au core/shell 구조가 형성되며, Au의 광 흡수율이 매우 크게 증가함을 관찰할 수 있었다. 반면 flat한 표면위에 빽빽하게 수직으로 정렬된 ZnO NRAs를 성장시켜 그 위에 Ag를 증착할 경우, evaporated Ag flux가 ZnO nanorod의 사이에 scattered 되어 ZnO nanorod 기둥의 측면에 직경이 50 nm 이하인 nanoparticles이 decorated 되어 국소표면플라즈몬 현상이 관찰되었으며, 이러한 효과를 통해 입사되는 빛의 흡수율을 효과적으로 증가시킬 수 있었다. 또한, ZnO NRAs의 표면에 $SiO_2$를 e-beam evaporator를 이용하여 증착할 경우, 자연적으로 vapor flux와 ZnO nanorod 사이에 oblique angle이 $80^{\circ}$ 이상으로 증가하여 $SiO_2$ nanorods가 자발적으로 형성되어 ZnO/$SiO_2$ branch 계층형태의 나노구조를 제작할 수 있었다. 이러한 구조는 유효 graded refractive index profile로 인해 기존의 ZnO NRAs보다 개선된 반사방지 특성을 나타냈다. 이러한 계층 나노구조의 광학적 특성을 시뮬레이션을 통해 이론적으로 분석을 통해 광전자 소자의 성능의 개선에 대한 적용 가능성을 조사하였다.

• Korean Journal of Remote Sensing
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• v.17 no.1
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• pp.1-14
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• 2001

The enhancement of the refractive index structure parameter $C_n^2$ often occurs where vertical gradients of virtual potential temperature ${\theta}_v$ and mixing ratio q have their maximum values. The $C_n^2$ can be a very useful parameter for estimating the convective boundary layer(CBL) height. The behavior of $C_n^2$ peaks, often used to locate the height of mixed layer, was investigated in the present study. In addition, a new method to determine the CBL height objectively using both $C_n^2$ and vertical air velocity variance ${\sigma}_w$ data of UHF radar was also suggested. The present analysis showed that the $C_n^2$ peaks in the backscatter intensity profiles often occurred not only at the top of the CBL but also at the top of a residual layer or at a cloud layer. The $C_n^2$ peaks corresponding to the CBL heights were slightly lower than the CBL heights derived from rawinsonde sounding data when vertical mixing owing to weak solar heating was not significant and the height of strong vertical ${\theta}_v$ gradients were not consistent with that of strong vertical q gradients. However, the $C_n^2$ peaks corresponding to the CBL heights were in good agreement with the rawinsonde-estimated CBL hegiths when vertical mixing owing to solar heating was significant and the vertical gradient of both ${\theta}_v$ and q in the entrainment zone was very strong. The maximum backscatter intensity method, which determines the height of $C_n^2$ peak as the CBL height, correctly estimated the CBL height when the $C_n^2$ profile had single peak, but this method erroneously estimated the CBL height when there was a residual layer or a cloud layer over the top of the CBL. The new method distinguished when there the CBL height from the peak due a cloud layer or a residual layer using both $C_n^2$ and ${\sigma}_w$ data, and correctly estimated the CBL height. As for estimation of diurnal variation of the CBL height, the new method backscatter intensity method even if the vertical profile of backscatter intensity had two peaks from the CBL height and a residual layer or a cloud layer.

• Progress in Medical Physics
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• v.25 no.4
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• pp.233-241
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• 2014

The aim of this study is to develop a new software tool for 3D dose verification using $PRESAGE^{REU}$ Gel dosimeter. The tool included following functions: importing 3D doses from treatment planning systems (TPS), importing 3D optical density (OD), converting ODs to doses, 3D registration between two volumetric data by translational and rotational transformations, and evaluation with 3D gamma index. To acquire correlation between ODs and doses, CT images of a $PRESAGE^{REU}$ Gel with cylindrical shape was acquired, and a volumetric modulated arc therapy (VMAT) plan was designed to give radiation doses from 1 Gy to 6 Gy to six disk-shaped virtual targets along z-axis. After the VMAT plan was delivered to the targets, 3D OD data were reconstructed from 512 projection data from $Vista^{TM}$ optical CT scanner (Modus Medical Devices Inc, Canada) per every 2 hours after irradiation. A curve for converting ODs to doses was derived by comparing TPS dose profile to OD profile along z-axis, and the 3D OD data were converted to the absorbed doses using the curve. Supra-linearity was observed between doses and ODs, and the ODs were decayed about 60% per 24 hours depending on their magnitudes. Measured doses from the $PRESAGE^{REU}$ Gel were well agreed with the TPS doses at central region, but large under-doses were observed at peripheral region at the cylindrical geometry. Gamma passing rate for 3D doses was 70.36% under the gamma criteria of 3% of dose difference and 3 mm of distance to agreement. The low passing rate was resulted from the mismatching of the refractive index between the PRESAGE gel and oil bath in the optical CT scanner. In conclusion, the developed software was useful for 3D dose verification from PRESAGE gel dosimetry, but further improvement of the Gel dosimetry system were required.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.77-77
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• 2000

Titanium oxide (TiO2) thin films have valuable properties such as a high refractive index, excellent transmittance in the visible and near-IR frequency, and high chemical stability. Therefore it is extensively used in anti-reflection coating, sensor, and photocatalysis as electrical and optical applications. Specially, TiO2 have a high dielectric constant of 180 along the c axis and 90 along the a axis, so it is highlighted in fabricating dielectric capacitors in micro electronic devices. A variety of methods have been used to produce patterned self-assembled monolayers (SAMs), including microcontact printing ($\mu$CP), UV-photolithotgraphy, e-beam lithography, scanned-probe based micro-machining, and atom-lithography. Above all, thin film fabrication on $\mu$CP modified surface is a potentially low-cost, high-throughput method, because it does not require expensive photolithographic equipment, and it produce micrometer scale patterns in thin film materials. The patterned SAMs were used as thin resists, to transfer patterns onto thin films either by chemical etching or by selective deposition. In this study, we deposited TiO2 thin films on Si (1000 substrateds using titanium (IV) isopropoxide ([Ti(O(C3H7)4)] ; TIP as a single molecular precursor at deposition temperature in the range of 300-$700^{\circ}C$ without any carrier and bubbler gas. Crack-free, highly oriented TiO2 polycrystalline thin films with anatase phase and stoichimetric ratio of Ti and O were successfully deposited on Si(100) at temperature as low as 50$0^{\circ}C$. XRD and TED data showed that below 50$0^{\circ}C$, the TiO2 thin films were dominantly grown on Si(100) surfaces in the [211] direction, whereas with increasing the deposition temperature to $700^{\circ}C$, the main films growth direction was changed to be [200]. Two distinct growth behaviors were observed from the Arhenius plots. In addition to deposition of THe TiO2 thin films on Si(100) substrates, patterning of TiO2 thin films was also performed at grown temperature in the range of 300-50$0^{\circ}C$ by MOCVD onto the Si(100) substrates of which surface was modified by organic thin film template. The organic thin film of SAm is obtained by the $\mu$CP method. Alpha-step profile and optical microscope images showed that the boundaries between SAMs areas and selectively deposited TiO2 thin film areas are very definite and sharp. Capacitance - Voltage measurements made on TiO2 films gave a dielectric constant of 29, suggesting a possibility of electronic material applications.