• Elastomers and Composites
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• 제40권2호
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• pp.112-118
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• 2005

실란 커플링제가 카본블랙과 점토로 보강된 천연 고무 가황물의 회복 특성에 미치는 영향에 대해 연구하였다. Bis-(3-(triethoxysilyl)-propyl)-tetrasulfide (TESPT)를 실란 커플링제로 사용하였다. 실란 커플링제가 함유된 가황물은 실란 커플링제가 함유되지 않은 가황물에 비해 전반적으로 빠른 회복 거동을 보였다. 그러나, 점토 함량이 높은 가황물의 경우 $-20^{\circ}C$보다 낮은 온도에서는 실란 커플링제가 함유된 가황물이 실란 커플링제가 함유되지 않은 가황물에 비해 느리게 회복되었다. 실란 커플링제가 함유된 가황물과 실란 커플링제가 함유되지 않은 가황물의 회복량 차이는 점토 함량이 증가할수록 감소하였다. 실험 결과는 가교 밀도, 모둘러스, 그리고 결합 고무량으로 설명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.174-174
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• 2014

Memristor devices are one of the most promising candidate approaches to next-generation memory technologies. Memristive switching phenomena usually rely on repeated electrical resistive switching between non-volatile resistance states in an active material under the application of an electrical stimulus, such as a voltage or current. Recent reports have explored the use of variety of external operating parameters, such as the modulation of an applied magnetic field, temperature, or illumination conditions to activate changes in the memristive switching behaviors. Among these possible choices of signal controlling factors of memristor, photon is particularly attractive because photonic signals are not only easier to reach directly over long distances than electrical signal, but they also efficiently manage the interactions between logic devices without any signal interference. Furthermore, due to the inherent wave characteristics of photons, the facile manipulation of the light ray enables incident light angle controlled memristive switching. So that, in the tautological sense, device orienting position with regard to a photon source determines the occurrence of memristive switching as well. To demonstrate this position controlled memory device functionality, we have fabricated a metal-semiconductor-metal memristive switching nanodevice using ZnO nanorods. Superhydrophobicity employed in this memristor gives rise to illumination direction selectivity as an extra controlling parameter which is important feature in emerging. When light irradiates from a point source in water to the surface treated device, refraction of light ray takes place at the water/air interface because of the optical density differences in two media (water/air). When incident light travels through a higher refractive index medium (water; n=1.33) to lower one (air; n=1), a total reflection occurs for incidence angles over the critical value. Thus, when we watch the submerged NW arrays at the view angles over the critical angle, a mirror-like surface is observed due to the presence of air pocket layer. From this processes, the reversible switching characteristics were verified by modulating the light incident angle between the resistor and memristor.