• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.525-528
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• 2004

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.49-53
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• 1990

Laser plasma was generated by a 1 GW iodine photodissociation laser(λ=1.315${\mu}{\textrm}{m}$, E-12.7J) whose output beam was focused on a molybdenum target surface. The experiment was conducted in the vacuum chamber under 10-5Torr and several tens of laser shooting were necessary for sufficient exposure to the PBS resist. A speciman was put directly on the resist and located at a distance of 3cm from the X-ray source. The replicas of a mesh, spider's tread, a red blood cell were obtained by PBS resist and were analyzed by Nomarski and SEM. Two main effects of limitation in resolution, source size and Fresnel diffraction, are mentioned and compared with the experimental result. In this experiment, a resolution better than 1000A could be obtained.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.62-68
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• 1998

Optical broadband second harmonic genration (SHG) in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DR1MA) which was consiste dof PMMA (polymethylmethacrylate) and DR 1 (disperse red 1) was spin coated on the pyrex substrate. The green and near UV SHG were observe dfrom the fundamental beam even though the poled polymer has the absorption in second harmonic wavelength range. It was able to genrate SHG by cerenkov type phase matching. Th epoled polymer film thickness was decided by theoretical analysis. The green (532nm) and near UV SHG (370nm) were observed from the Q-switched Nd-YAG laser (1064nm) and Ti-sapphire laser (740nm). It was in good agreement with the experimental results.

• Journal of radiological science and technology
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• v.21 no.2
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• pp.11-18
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• 1998

Single phase, narrow beam X-ray attenuation data were obtained using various construction materials concrete, white block, red block, 3 hole block, gypsum board, artificial marble, cement, plate glass, wood, and lead. Tube voltages of 60, 80, 100, 120 kVp were employed and the resulting curves were compared to transmission data found in this report. The shielding methodology and the derivation of equations used for determination of barrier requirements were presented in NCRP 49. We could calculate the X-ray exposed dose after attenuation and thickness of protection barrier in the clinic facilities accordingly. For the purpose of maximizing the benefit/cost ratio to diagnostic shielding, various construction materials must be installed carefully and attnuation rate considered thoroughly.

• Journal of the Korean Vacuum Society
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• v.8 no.4A
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• pp.450-455
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• 1999

We present Photoluminescence (PL) and Atomic Force Microscopy (AFM) image on InAs quantum dots (QDs) having different size which grown by Molecualr Beam Epitaxy (MBE). For different size QDs, analysis of the AFM profiles show that the density of QDs was the maximum value $(1.1\times10^{11}\textrm{/cm}^2)$ at 2.0 ML. In the spectra of QDs, it is found that the peak energy decreases with increasing dot size due to the effect of quantum confinement. Temperature dependence of PL intensities show that the PL is quenching and Red shift as the temperature increase. The FWHM range of 20K~180K is narrowing with increasing temperature. When temperature is over 180K, the line-width starts to in creases with increasing temperature. At last, temperature dependence of the integrated intensities were fit using the Arrehenius-type function for the activation energy. Fit value of the activation energy was increased with increasing QDs-size.

• Journal of The Korean Astronomical Society
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• v.29 no.spc1
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• pp.295-298
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• 1996

Non-LTE calculations, with the non-thermal ionization effects included, indicated that for electron bombardment, the H$\alpha$ line is widely broadened and shows a strong central reversal. Significant enhancements at the line wings of Ly$\alpha$ and Ly$\beta$ are also predicted at the beginning of the impulsive phase of flares. For the proton bombardment, no strong broadening and no large central reversal are expected. However, due to proton-hydrogen charge exchange, the enhancements at the red wings of Ly$\alpha$ and Ly$\beta$ lines at the early impulsive phase of flares are significant. Our results show that the electron beam can also in some cases generate visible and UV continuum emission in white-light flares. However, at the onset phase, a negative flare may appear within several seconds, due to the increase of the H- opacity. Another spectroscopic signature of energetic particles, i.e. the impact polarization of atomic lines, is also mentioned.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.752-758
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• 1995

Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

• Journal of the Optical Society of Korea
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• v.9 no.3
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• pp.87-91
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• 2005

The strontium magneto optical trap followed by a Zeeman slower has been demonstrated. The isotope selective characteristics of the trap have been investigated. The fluorescence spectrum of the MOT was compared with those of other high resolution spectroscopic methods. The red detuned deflection beam is also considered for a more selective spectrum.

• Korean Journal of Food Science and Technology
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• v.49 no.2
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• pp.117-122
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• 2017

The aim of this study was to evaluate the quality characteristics of fresh red paprika treated by electron-beam irradiation at quarantine doses. The initial microbial loads were low with $10^4$ and $10^2$ colony-forming units/g for total aerobic bacteria and coliform, respectively; however, a dose of 1 kGy resulted in load reduction of 1 log cycle. A dose level of more than 1 kGy caused significant decreases in the hardness and carotenoid content parameters. An applied dose level of less than 2 kGy did not affect vitamin C content; however, a decrease of 87-90% was observed after 40-day storage. Samples treated with 2 kGy showed significantly lower acceptance compared to the control, with lower sensory evaluation scores for color and texture. Therefore, e-beam irradiation at dose range of 0.4 and 1 kGy was found to be appropriate for quarantine applications for microbiological control and quality maintenance of paprika.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.351-359
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• 1996

We have investigated the effect of hydrogen plasma on the formation of InAs QDs (quantum dots) structure by using a CBE (chemical beam epitaxy)system equipped with ECR (electron cyclotron resonance) plasma source. It is confirmed that the formation of self-organized InAs-QDs on GaAs is started after the growth of InAs layer up to 2.6 ML (monolayer) with the irradiation of hydrogen plasma while it is started after 1.9 ML without hydrogen gas and hydrogen plasma through the observation of RHEED patterns. Density and size of the QDs formed at $T_{sub}=370^{\circ}C$ are $1.9{\times}10^{11}cm^{-2}$ and 17.7 nm without hydrogen plasma, and $1.3{\times}10^{11}cm^{-2}$ and 19.4 nm with hydrogen plasma, respectively. It is also observed from the PL(photoluminescence) measurement on InAs-QDs that red shift in PL peak energy and broadening in FWHM (full width at half maximum)of PL peak caused by the effects of hydrogen plasma on the increment of size and its distribution. These effects of hydrogen plasma are considered as a act of atomic hydrogen which enhances the layer-growth of InAs on GaAs resulted from the relief of misfit strain between GaAs substrate and InAs.