• Current Optics and Photonics
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• v.4 no.5
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• pp.434-440
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• 2020

Based on single-mode rate equations, we present an improved equivalent-circuit model for distributed-feedback (DFB) lasers that accounts for the effects of parasitic parameters and nonradiative recombination. This equivalent-circuit model is composed of a parasitic circuit, an electrical circuit, an optical circuit, and a phase circuit, modeling the circuit equations transformed from the rate equations. The validity of the proposed circuit model is verified by comparing simulation results to measured results. The results show that the slope efficiency and threshold current of the model are 0.22 W/A and 13 mA respectively. It is also shown that increasing bias current results in the increase of the relaxation-oscillation frequency. Moreover, we show that the larger the bias current, the lower the frequency chirp, increasing the possibility of extending the transmission distance of an optical-fiber communication system. The results indicate that the proposed circuit model can accurately predict a DFB laser's static and dynamic characteristics.

• Proceedings of the Korea Society of Information Technology Applications Conference
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• 2005.11a
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• pp.237-241
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• 2005

We present a device model for organic light emitting diodes(OLEDs) which includes charge injection, transport, recombination, and space charge effects in the organic materials. The model can describe both injection limited and space charge limited current flow and the transition between them. Calculated device current, light output, and quantum and power efficiency are presented for different cases of material and device parameters and demonstrate the improvements in device performance in bilayer devices. These results are interpreted using the calculated spatial variation of the electric field, charge density and recombination rate density in the device. We find that efficient OLEDs are possible for a proper choice of organic materials and contact parameters.

• Journal of Electrical Engineering and information Science
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• v.2 no.4
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• pp.99-105
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• 1997

The new classified model for N-p heterojunction diode is derived and used extensively in analyzing the current-voltage(I-V) characteristics of the HBTs. A new classification method is presented in order to simplify I-V equations and easily applied to the modeling of HBTs. This classification method is characterized by the properties of devices such as high level injection, the thickness of one or both bulk regions, the surface recombination and the generation-recombination. The simulation results using the proposed model agree well with the experimentally observed I-V behaviors and show good efficiencies in its application to HBTs with respect to mathematical formulation.

• Journal of Microbiology and Biotechnology
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• v.27 no.2
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• pp.335-341
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• 2017

The complexity of the bacterial recombination system is a barrier for the construction of bacterial mutants for the further functional investigation of specific genes. Several protocols have been developed to inactivate genes from the genus Pseudomonas. Those protocols are complicated and time-consuming and mostly do not enable easy construction of multiple knock-ins/outs. The current study describes a single and double crossover-recombination system using an optimized vector-free allele-exchange protocol for gene disruption and gene replacement in a single species of the family Pseudomonadaceae. The protocol is based on self-ligation (circularization) for the DNA cassette which has been obtained by overlapping polymerase chain reaction (Fusion-PCR), and carries an antibiotic resistance cassette flanked by homologous internal regions of the target locus. To establish the reproducibility of the approach, three different chromosomal genes (ncRNA31, rpoN, rpoS) were knocked-out from the root-associative bacterium Pseudomonas stutzeri A1501. The results showed that the P. stutzeri A1501 mutants, which are free of any plasmid backbone, could be obtained via a single or double crossover recombination. In order to optimize this protocol, three key factors that were found to have great effect on the efficiency of the homologous recombination were further investigated. Moreover, the modified protocol does not require further cloning steps, and it enables the construction of multiple gene knock-in/out mutants sequentially. This work provides a simple and rapid mutagenesis strategy for genome editing in P. stutzeri, which may also be applicable for other gram-negative bacteria.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.1
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• pp.85-88
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• 2012

DSCs are based on a dye-adsorbed porous $TiO_2$ layer as a photo electrode [1]. Under the illumination, dye molecules are excited and electrons are produced. The injected electrons in the conduction band of $TiO_2$ may recombine with the electrolyte. To obtain high performance DSCs, it is essential to retard the recombination. The charge recombination can be reduced by forming core-shell structure. In this work, we investigated the core-shell structure with $Al_2O_3$ and MgO coating layer on the porous $TiO_2$ layer. We confirmed the photovoltaic properties by I-V characteristics. The current and the efficiency was improved. In addition to, Through decrease in the width of EIS arc, which is the sum of the interfacial charge transfer resistances of both electrodes, we can be indicated that the block effect.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.149-152
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• 2012

$Cu(In,Ga)Se_2$ (CIGS) is one of the most promising photovoltaic materials because of large conversion efficiency which has been achieved with an optimum Ga/(In+Ga) composition in $CuIn_{1-x}Ga_xSe_2$ (X~0.3). The Ga/(In+Ga) content is important to determine band gap, solar cell performances and carrier behaviors at grain boundary (GB). Effects of Ga/(In+Ga) content on physical properties of the CIGS layers have been extensively studied. In previous research, it is reported that GB is not recombination center of CIGS thin-film solar cells. However, GB recombination and electron-hole pair behavior studies are still lacking, especially influence of with different X on CIGS thin-films. We obtained the GB surface potential, local current and I-V characteristic of different X (00.7 while X~0.3 showed higher potential than 100 mV on GBs. Higher potential on GBs appears positive band bending. It can decrease recombination loss because of carrier separation. Therefore, we suggest recombination and electron-hole behaviors at GBs depending on composition of X.

• Current Photovoltaic Research
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• v.8 no.1
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• pp.6-11
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• 2020

The power conversion efficiency (PCE) of a two-terminal tandem solar cell depends upon the tunnel-recombination junction (TRJ) between the top and bottom sub-cells. An optimized TRJ in a tandem cell helps improve its open-circuit voltage (V_oc), short-circuit current density (J_sc), fill factor (FF), and efficiency (PCE). One of the parameters that affect the TRJ is the buffer layer thickness. Therefore, we investigated various TRJs by varying the thickness of the buffer or intermediate layer (TRJ-buffer) in between the highly doped p-type and n-type layers of the TRJ. The TRJ-buffer layer was p-type nc-Si:H, with a doping of 0.06%, an activation energy (E_a) of 43 meV, an optical gap (E_g) of 2.04 eV, and its thickness was varied from 0 nm to 125 nm. The tandem solar cells we investigated were a combination of a heterojunction with intrinsic thin layer (HIT) bottom sub-cell and an a-Si:H (amorphous silicon) top sub-cell. The initial cell efficiency without the TRJ buffer was 7.65% while with an optimized buffer layer, its efficiency improved to 11.74%, i.e., an improvement in efficiency by a factor of 1.53.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Current Photovoltaic Research
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• v.9 no.4
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• pp.128-132
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• 2021

Advances in screen printing technology have been led to development of high efficiency silicon solar cells. As a post PERx structure, an n-type wafer-based rear side TOPCon structure has been actively researched for further open-circuit voltage (Voc) improvement. In the case of the metal contact of the TOPCon structure, the poly-Si thickness is very important because the passivation of the substrate will be degraded when the metal paste penetrates until substrate. However, the thin poly-Si layer has advantages in terms of current density due to reduction of parasitic absorption. Therefore, poly-Si thickness and firing temperature must be considered to optimize the metal contact of the TOPCon structure. In this paper, we varied poly-Si thickness and firing peak temperature to evaluate metal induced recombination (Jom) and contact resistivity. Jom was evaluated by using PL imaging technique which does not require both side metal contact. As a results, we realized that the SiN_x deposition conditions can affect the metal contact of the TOPCon structure.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.91.1-91.1
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• 2010

There are some methods for increasing efficiency of crystalline silicon solar cells. Among them, It is important to reduce the recombination loss of surface for high efficiency. In order to reduce recombination loss is a way to use the BSF(Back Surface Field). The BSF on the back of the p-type wafer forms a p+layer. so, it is prevented to act electrons of the p-area for the rear recombination. As a result, the leakage current is reduced and the rear-contact has a good Ohmic contact. therefore, open-circuit-voltage and Fill factor(FF) of solar cells are increased. This paper investigates the formation of rear contact process comparing Aluminum-paste(Al-paste) with Aluminum-Metal(99.9%). It is shown that the Aluminum-Metal provides high conductivity and low contact resistance of $21.35m{\Omega}cm$ using the Vacuum evaporation process but, it is difficult to apply the standard industrial process because high Vacuum is needed and it costs a tremendous amount more than Al-paste. On the other hand, using the Al-paste process by screen printing is simple for formation of metal contact and it is possible to produce the standard industrial process. however, it is lower than Aluminum-Metal(99.9) of conductivity because of including mass glass frit. In this study, contact resistances were measured by 4-point prove. each of contact resistances is $21.35m{\Omega}cm$ of Aluminum-Metal and $0.69m{\Omega}cm$ of Al-paste. and then rear contact have been analyzed by Scanning Electron Microscopy(SEM).