• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.477-480
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• 2002

Si-O-C(-H) thin film with a tow dielectric constant were deposited on a P-type Si(100) substrate by an inductively coupled plasma chemical vapor deposition (ICPCVD). Bis-trimethylsilymethane (BTMSM, H$_{9}$C$_3$-Si-CH$_2$-Si-C$_3$H$_{9}$) and oxygen gas were used as Precursor. Hybrid type Si-O-C(-H) thin films with organic material have been generated many voids after annealing. Consequently, the Si-O-C(-H) films can be made a low dielectric material by the effect of void. The surface characterization of Si-O-C(-H) thin films were performed by SEM(scanning electron microscope). The characteristic analysis of Si-O-C(-H) thin films were performed by X-ray photoelectron spectroscopy (XPS).