• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.118-119
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• 2005

PRAM (Phase Change Random Access Memory) is well known to use reversible phase transition between amorphous (high resistance) and crystalline (low resistance) states of chalcogenide thin film by electrical Joule heating. In this paper, we introduce a stack-type PRAM device with a novel GST/TiAlN structures (GST and a heating layer of TiAlN), and report its electrical switching properties. XRD analysis result of GST thin film indicates that the crystallization of the GST film start at about $200^{\circ}C$. Electrical property results such as I-V & R-V show that the phase change switching operation between set and reset states is observed, as various input electrical sources are applied.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.341-342
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_3O_{12}$ (BGT), thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si substrates by a sol-gel method and their structural and ferroelectric properties have been characterized. Fabricated BGT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The remanent polarization ($2P_r$)) of BGT thin film annealed at $720^{\circ}C$ was $25.85\;{\mu}C/cm^2$ at an applied voltage of 5 V. The BGT thin films exhibited a 11 % reduction in their switching charge after no less than $10^{11}$ switching cycles at a frequency of 1 MHz.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1059-1062
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• 2006

We report synthesis and properties of new phenothiazyl polymer derivatives, Poly(10-octyl-10Hphenothiazine-3,7-diyl)(POP), Poly(2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene-2,7-diyl) (PTOSF), and their random copolymers, Poly(10-octylphenothiazine-co-2',3',6',7'-tertrakis-octyloxy-9-spirobifluorene) (POTOSF). PL emission of POP, PTOSF and POTOSF copolymer were found to be 480, 434 and 484nm, respectively. EL emission peak of double-layer EL device of POTOSF was at 494nm (bluish green).

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.101-102
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• 2006

PZT thin films, which are the representative ferroelectric materials in ferroelectric random access memory (FRAM), have some serious problem such as the imprint, retention and fatigue which ferroelectric properties are degraded by repetitive polarization. BL T thin film capacitors were fabricated by plasma etching, however, the plasma etching of BLT thin film was known to be very difficult. In our previous study, the ferroelectric materials such as PZT and BLT were patterned by chemical mechanical polishing (CMP) using damascene process to top electrode/ferroelectric material/bottom electrode. It is also possible to pattern the BLT thin film capacitors by CMP, however, the CMP damage was not considered in the experiments. The properties of BLT thin films were changed by the change of polishing pressure although the removal rate was directly proportional to the polishing pressure in CMP process.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 2003년도 춘계 학술발표회논문집
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• pp.157-164
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• 2003

A simulation-based approach that can be used to systematically model the uncertainties of seismic loading and geotechnical property is presented in the context of reliability analysis of slope stability. The uncertainty of seismic loading is studied by generating a large series of hazard-compatible artificial motions, and by using them in subsequent response analyses. The stochastic nature of spatially varying material properties and also the uncertainty arising from insufficient information are treated in the framework of random fields. The simulation-based analyses indicate that in a seismically less active region, a moderate variability in soil properties has a relatively large effect as much as characterization of earthquake hazard on the computed risk of slope failure and excessive slope deformations.

• Computers and Concrete
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• 제6권2호
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• pp.133-153
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• 2009

Discrete element modeling (DEM) in concrete technology is concerned with design and use of models that constitute a schematization of reality with operational potentials. This paper discusses the material science principles governing the design of DEM systems and evaluates the consequences for their operational potentials. It surveys the two families in physical discrete element modeling in concrete technology, only touching upon probabilistic DEM concepts as alternatives. Many common DEM systems are based on random sequential addition (RSA) procedures; their operational potentials are limited to low configuration-sensitivity features of material structure, underlying material performance characteristics of low structure-sensitivity. The second family of DEM systems employs concurrent algorithms, involving particle interaction mechanisms. Static and dynamic solutions are realized to solve particle overlap. This second family offers a far more realistic schematization of reality as to particle configuration. The operational potentials of this family involve valid approaches to structure-sensitive mechanical or durability properties. Illustrative 2D examples of fresh cement particle packing and pore formation during maturation are elaborated to demonstrate this. Mainstream fields of present day and expected application of DEM are sketched. Violation of the scientific knowledge of to day underlying these operational potentials will give rise to unreliable solutions.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.191-192
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• 2008

For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Ge-Se-Te and Ag/$Ge_1Se_1Te_2$ samples are fabricated and irradiated with He-Ne laser and DPSS laser to investigate a reversible phase change by light. Because of Ag ions, the Ag layer inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

• 한국전기전자재료학회논문지
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• 제37권3호
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• pp.231-240
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• 2024

Titanium dioxide (TiO₂) holds significant scientific and technological relevance as a key photocatalyst and resistive random-access memory, demonstrating unique physicochemical properties and serving as an n-type semiconductor. Understanding the density and arrangement of oxygen vacancies (VOs) is crucial for tailoring TiO₂'s properties to diverse technological needs, driving increased interest in exploring oxygen vacancy complexes and superstructures. In this mini review, we summarize the recent understandings of the fundamental properties of oxygen vacancies in bulk rutile (R-TiO₂) and anatase (A-TiO₂) based on DFT and beyond method. We specifically focus on the excess electrons and their spatial arrangement of disordered single VO in bulk R and A-TiO₂, aligned with the experimental findings. We also highlight the theoretical works on investigating the geometries and stabilities of ordered VOs complexes in bulk TiO₂. This comprehensive review provides insights into the fundamental properties of excess electrons in reduced TiO₂, offering valuable perspectives for future research and technological advancements in TiO₂-based devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.16-19
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• 2002

(Ba,Sr)TiO3(BST) thin film is an attractive material for the application in high-density dynamic random access memories (DRAMs) because of the high relative dielectric constant and small variation in dielectric properties with frequency. In this study, (Ba0.6,Sr0.4)TiO3 thin films on Pt/Ti/SiO2/Si substrates were deposited by a sol-gel method and the CF4/Ar inductively coupled plasma (ICP) etching behavior of BST thin films had been investigatedby varying the process parameters such as chamber pressure, ICP power, and substrate bias voltage. To analysis the composition of surface residue following etching BST films etched with different Ar/CF4 gas mixing ratio were investigated using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometer (SIMS).

• 전산구조공학
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• 제8권2호
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• pp.115-121
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• 1995

고강도콘크리트(압축강도 400-700kgf/cm/sup 2)를 이용한 구조물의 강도성능과 휨변형을 정확히 구하는 해석방법을 제안하는 것이 본 연구의 목적으로서, 재료특성을 모델화하기 위하여 희귀분석을 이용한 고강도콘크리트의 응력-변형률관계와 사다리꼴 응력모델을 검토하여 그 적용성을 확인하였다. 내력과 변형의 해석방법으로서는 단면을 요소분할하여 재료의 응력-변형률관계를 이용한 모멘트-곡률관계의 해석을 이용하였다. 여기서 본 연구는 재료특성의 불확정 변수와 해석시의 반복계산에 의한 오차를 최소화하기 위하여 확률적 개념을 이용한 몬테카를로 시뮬레이션의 방법을 도입하여 내력 및 변위성능을 합리적으로 평가하였다.