• Journal of electromagnetic engineering and science
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• v.18 no.2
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• pp.117-128
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• 2018

In this paper, compact linear dual polarized series-fed $1{\times}2$ linear and $2{\times}2$ planar arrays antennas for airborne SAR applications are proposed. The proposed antenna design consists of a square radiating patch that is placed on top of the substrate, a quarter wave transformer and $50-{\Omega}$ matched transformer. Matching between a radiating patch and the $50-{\Omega}$ microstrip line is accomplished through a direct coupled-feed technique with the help of an impedance inverter (${\lambda}/4$ impedance transformer) placed at both horizontal and vertical planes, in the case of the $2{\times}2$ planar array. The overall size for the prototype-1 and prototype-2 fabricated antennas are $1.9305{\times}0.9652{\times}0.05106{{\lambda}_0}^3$ and $1.9305{\times}1.9305{\times}0.05106{{\lambda}_0}^3$, respectively. The fabricated structure has been tested, and the experimental results are similar to the simulated ones. The CST MWS simulated and vector network analyzer measured reflection coefficient ($S_{11}$) results were compared, and they indicate that the proposed antenna prototype-1 yields the impedance bandwidth >140 MHz (9.56-9.72 GHz) defined by $S_{11}$<-10 dB with 1.43%, and $S_{21}$<-25 dB in the case of prototype-2 (9.58-9.74 GHz, $S_{11}$< -10 dB) >140 MHz for all the individual ports. The surface currents and the E- and H-field distributions were studied for a better understanding of the polarization mechanism. The measured results of the proposed dual polarized antenna were in accordance with the simulated analysis and showed good performance of the S-parameters and radiation patterns (co-pol and cross-pol), gain, efficiency, front-to-back ratio, half-power beam width) at the resonant frequency. With these features and its compact size, the proposed antenna will be suitable for X-band airborne synthetic aperture radar applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03a
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• pp.16-16
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• 2010

GaN-based light-emitting diodes (LEDs) are attracting great interest as candidates for next-generation solid-state lighting, because of their long lifetime, small size, high efficacy, and low energy consumption. However, for general illumination applications, the external quantum efficiency of LEDs, determined by the internal quantum efficiency (IQE) and the light extraction efficiency, must be further increased. The IQE is determined by crystal quality and epitaxial layer structure and high value of IQE more than 70% for blue LEDs have been already reported. However, there is much room for improvement of light extraction efficiency because most of the generated photons from active layer remain inside LEDs by total internal reflection at the interface of semiconductor with air due to the high refractive index difference between LEDs epilayer (for GaN, n=2.5) and air (n=1). The light confining in LEDs will be reabsorbed by the metal electrode or active layer, reducing the efficacy of LEDs. Here, we present the first demonstration of enhanced light extraction by forming a MgO nano-pyramids structure on the surface of vertical-LEDs. The MgO nano-pyramids structure was successfully fabricated at room temperature using conventional electron-beam evaporation without any additional process. The nano-sized pyramids of MgO are formed on the surface during growth due to anisotropic characteristics between (111) and (200) plane of MgO. The ZnO layer with quarter-wavelength in thickness is inserted between GaN and MgO layers to increase the critical angle for total internal reflection, because the refractive index of ZnO (n=1.94) could be matched between GaN (n=2.5) and MgO (n=1.73). The MgO nano-pyramids structure and ZnO refractive-index modulation layer enhanced the light extraction efficiency ofV-LEDs with by 49%, comparing with the V-LEDs with a flat n-GaN surface. The angular-dependent emission intensity shows the enhanced light extraction through the side walls of V-LEDs as well as through the top surface of the n-GaN, because of the increase in critical angle for total internal reflection as well as light scattering at the MgO nano-pyramids surface.