• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.367-367
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• 2012

We investigate Landau level spectra of twisted bilayer graphene under a perpendicular magnetic field, showing that the layers provide rich electronic structure depending on misoriented angle. New types of excitations with Landau level sequences due to the reflection of interlayer coupling level are matter of interest in the present work. We calculate the electronic structure of bilayer systems with a relative small angle rotation of the two graphene layers. Calculated Landau level spectra for twisted bilayer graphene using a continuum formulation are in good agreement with existing experimental and theoretical studies. Twist angle dependent numerical simulations provide significant insights for the nature of the Landau level spectra in bilayer graphene, combining signals from both massive and massless Dirac fermions. We finally discuss the influence of the graphene layers in the experimental sample that related to the magneto-transport measurements including quantum Hall conductance.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.