• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.1-8
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• 1996

High-sensitive pyroelectric infrared sensors have been fabricated with La-modified $PbTiO_{3}$(PLT) thin plates. The PLT thin plates have the composition of $(Pb_{0.9}La_{0.1}Ti_{0.75}O_{3})_{0.75}(PbO)_{0.25}$. Thickness of the thin plates is $100\;{\mu}m$. Top side electrodes exposed to IR are vacuum evaporated Ni-Cr, and bottom side electrodes are Ag. Each one takes the area of $1{\times}2\;mm^{2}$. The thin plates have a large resistivity of $6.41{\times}10^{10}{\Omega}{\cdot}cm$ and a relative dielectric constant of 341. They have a high figure of merit of $4.0{\times}10^{-11}\;Ccm/J$ due to its high pyroelectric coefficient of $4.45{\times}10^{-8}\;C/cm^{2}K$. The sensors show such a large voltage responsivity as 2501 V/W. That they can find practical applications like the pyroelectric infrared detectors.

• 전기의세계
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• v.36 no.1
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• pp.6-13
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• 1987

본고에서는 초전형적외선센서(pyroelectric infrared sensor)를 이용한 적외선검출기에 대하여 주로 언급하고 그 응용분야에 대하여 논하였다.

• Journal of Sensor Science and Technology
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• v.10 no.2
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• pp.86-90
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• 2001

A pyroelectric senior using P(VDF/TrFE) film for sensing materials has been fabricated and evaluated with other commercial pyroelectric sensors that use ceramic materials for sensing. The device was mounted in a TO-5 housing to detect infrared light of $5.5{\sim}14\;{\mu}m$ wavelength. The NEP (noise equivalent power) and specific detectivity $D^*$ of the device were $2.13{\times}10^{-8}\;W$ and $9.37{\times}10^6\;cm/w$ respectively under emission energy of $13\;{\mu}W/cm^2$ respectively. These result shows a better characteristics than other commercial pyroelectric sensors NEP $8.08{\times}10^{-7}\;W$ and $D^*$ $2.47{\times}10^5\;cm/w$.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.759-761
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• 1992

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3+MnO_2(0.18mol%)$, NiO(0.15mol%) temary compound ceramics won fabricated by the mixed-oxide method. Noise properties of the pyroelectric infrared sensor were investigated with particle size of the raw materials and gain size of the specimens. Particle size were decreased and sintered density, voltage resposivity were increased with increasing the ball-mill times. The specimen ball-milled for a 80[hr] showed a good pop-corn noise properties.

• Journal of Institute of Control, Robotics and Systems
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• v.12 no.9
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• pp.905-911
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• 2006

Smart homes are expected to offer various intelligent services by recognizing the residents' life pattern, health, and feeling. One of the key issues for realizing the smart home is how to detect the locations of residents. Currently, the research effort is focused on two approaches: terminal-based and non-terminal-based method. The terminal-based method employs a type of device that should be carried by the resident while the non-terminal-based method has no such device. This paper presents a novel non-terminal-based approach using an array of pyroelectric infrared sensors (PIRs) that can detect residents. The feasibility of the system is evaluated experimentally on a test bed.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.2
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• pp.109-116
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• 2016

Sensing module of standing and moving human body using shutter method was developed. The module consists of Fresnel lens, pyroelectric infrared (PIR) sensor, interface circuit of the PIR, micro control unit(MCU), and alarm light emitting diode(LED). The principle for standing human body is chopping the thermal of human body using camera shutter. The human sensing signal in MCU by algorithm of interrupt function is detected. By unifying an apparatus and print circuit board(PCB), the developed module can be replaced as commercial moving human body detector. Experiment results show that sensing distance is about 7.0m and sensing angles is about $110^{\circ}$ at room temperature. In these condition, sending ratio was 100% and the power dissipation of the module was 100mW.

• Journal of the Korean Ceramic Society
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• v.32 no.6
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• pp.748-760
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• 1995

Pyroelectric properties, figure of merits, and the other properties of the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, as expected to have excellent pyroelectric properties in the operating temperature range of pyroelectric type infrared sensor, were investigated. In the Pb(Zn1/3Nb2/3)O3-Pb(Fe1/2Nb1/2)O3 system, suppression of the pyrochlore phase depended on sintering condition, as like sintering temperature, holding time, sintering atmosphere. The specimen, sintered by the same composition atmosphere powder at 105$0^{\circ}C$ for 1.5h, possessed the best physical property. It was found that the piezoelectric parameters were mainly depended on the amount of spontaneous polarization and then the 0.2PZN-0.8PFN showed the best pyro- and piezoelectric properties. In terms of the experimental method, two pyroelectric-testing methods, i.e. static and dynamic methods, had a same tendency. Also the result of pyroelectric testing by the static method indicated that the diffuse phase transitiion resulted in the temperature difference of phase transition between dielectric constant and pyroelectric coefficient.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.6
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• pp.37-44
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.11a
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• pp.53-54
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• 2007