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Investigation on the Output Power Improvement of Push-Push FET DRO with an Additional DR (Push-Push FET DRO에 부가된 유전체 공진기의 전력 증강 역할에 관한 분석)

  • 박승욱;김인석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.11
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    • pp.1170-1175
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    • 2003
  • In this paper, the output power improvement of Push-Push FET DRO by adding the identical DR at the drain port as one used in the gate port, has been theoretically investigated. The investigation shows that the DR located between two microstrip lines locks the phase difference of two FET's outputs at 180 degree and improves the output power of Push-Push FET DRO. Since this effect can be used for correcting the impedance difference between two FETs output circuits and the electrical length error of the power combiner at the output circuit of Push-Push DRO, which may occur when fabricate the oscillator, the oscillator with an additional DR can be useful structure for fabricating oscillator.

A Design of Push-push Voltage Controlled Oscillator using Frequency Tuning Circuit with Single Transmission Line (단일 전송선로의 주파수 동조회로를 이용한 push-push 전압제어 발진기의 설계 및 제작)

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of IKEEE
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    • v.16 no.2
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    • pp.121-126
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    • 2012
  • In this paper, a push-push VCDRO (Voltage Controlled Dielectric Resonator Oscillator) with a modified frequency tuning structure is investigated. The push-push VCDRO designed at 16GHz is manufactured using a LTCC (Low Temperature Co-fired Ceramic) technology to reduce the circuit size. The frequency tuning structure is embedded in intermediate layer of A6 substrate by an advantage of LTCC process. Experimental results show that the fundamental frequency suppression is above 30dBc, the frequency tuning range is 0.43MHz over control voltage of 0 to 12V, and phase noise of push-push VCDRO presents a good performance of -103dBc/Hz at 100KHz offset frequency from carrier.

Multibody Analysis of a Push-Push Type Mechanism for Micro SIM Card Socket (Micro SIM Card Socket에 사용된 Push-Push Type 기구의 다물체동역학 해석)

  • Choi, Chan Kyu;Kim, Ju Chul;Yun, Ju Young;Sim, Jung Kil;Yoo, Hong Hee
    • Transactions of the KSME C: Technology and Education
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    • v.1 no.1
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    • pp.1-6
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    • 2013
  • A SIM card socket is used for a cell phone to fix an USIM card and a push-push mechanism is typically employed in the SIM card socket for a user convenience. A SIM card is inserted with locking when a user pushes the card once and a SIM card is removed with unlocking when a user pushes the card again. A push-push mechanism is operated by a heart-cam structure and a main spring. A cam slider and a cam stick consisting a push-push mechanism may be broken because of the main spring. So, dynamic stress at a cam slider and a cam stick which is generated by a main spring during operating should be analyzed and considered in the push-push mechanism design. In this paper, a flexible multibody model of a push-push mechanism was developed to analyze dynamic stress at a cam slider and a cam stick.

Comparative Studies of Muscle Activity on Upper Extremity Between Push-up bend and Push-up plus Movement According to change of supporting base interval (지지면 간격변화에 따른 푸시업(Push-up) 굽힘동작과 푸시업 플러스(Push-up plus) 동작시 상지 근육의활성도 비교)

  • Kim, Eun-Young;Park, Hung-Gi;Ahn, Byung-Heon
    • Journal of Korean Physical Therapy Science
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    • v.15 no.3
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    • pp.31-41
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    • 2008
  • Purpose : The purpose of this study is to examine the muscle activity of shoulder stabilization according to change of supporting base interval between push-up bend and push-up plus position and is to prevent or treat a shoulder injury by the most effective exercise for rehabilitation. Methods : This study analyzed the muscle activity according to change of supporting base interval between push-up bend and push-up plus movement. The participants without neuromuscular disease were 25 students - 12 males and 13 females - all twenty or over and the surface electrode of EMG attached on pectoralis major, triceps long head, middle trapezius, lower trapezius, serratus anterior and latissimus dorsi. The process has practiced 3 sessions of supporting base interval - narrowing interval, two shoulder interval, broad interval - by push-up bend and push-up plus movement. Result : 1. The muscle activity of pectoralis major was significantly increased according to narrow interval of supporting base on push-up plus movement and was significant difference(p<.05). 2. The muscle activity of biceps was significantly increased according to narrow interval of supporting base on push-up bend movement(p<.05). 3. The muscle activity of middle or lower trapezius was a difference according to change of supporting base on push-up bend and push-up plus movement but was not significant difference. 4. The muscle activity of serratus anterior was significantly increased according to broad interval of supporting base on push-up bend movement(p<.05). 5. The muscle activity of latissimus dorsi was significantly increased according to broad interval of supporting base on push-up bend movement(p<.05). Conclusion : These results lead us to the conclusion that push-up bend exercise have the effect of muscle strength of biceps on narrowing interval, of serratus anterior or latissimus dorsi on broad interval and push-up plus exercise have the effect of muscle strength of pectoralis major on narrowing interval of support base.

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Design and Fabrication of the Push-push Dielectric Resonator Oscillator using a LTCC (LTCC를 이용한 push-push 유전체 공진 발진기의 설계 및 제작)

  • Ryu, Keun-Kwan;Oh, Eel-Deok;Kim, Sung-Chan
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.14 no.3
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    • pp.541-546
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    • 2010
  • The push-push DRO(dielectric resonator oscillator) using a multi-layer structure of LTCC(low temperature co-fired ceramic) fabrication is designed. After the single DRO of series feedback type in the center frequency of 8GHz is designed, the push-push DRO in the center frequency of 16GHz including the Wilkinson power combiner is designed. The bias circuit affecting the size of oscillator are embedded in the intermediate layer of the LTCC multi-layer substrate. As a result, the large reduction in the size of VCO is obtained compared to the general oscillator on the single layer substrate. Experimental results show that the fundamental and third harmonics suppression are above 15dBc and 25dBc, respectively, and phase noise characteristics of the push-push DRO presents performance of -102dBc/Hz@100KHz and -128dBc/Hz@1MHz offset frequencies from carrier.

Push-Push Voltage Controlled Dielectric Resonator Oscillator Using a Broadside Coupler

  • Ryu, Keun-Kwan;Kim, Sung-Chan
    • Journal of information and communication convergence engineering
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    • v.13 no.2
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    • pp.139-143
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    • 2015
  • A push-push voltage controlled dielectric resonator oscillator (VCDRO) with a modified frequency tuning structure using broadside couplers is investigated. The push-push VCDRO designed at 16 GHz is manufactured using a low temperature co-fired ceramic (LTCC) technology to reduce the circuit size. The frequency tuning structure using a broadside coupler is embedded in a layer of the A6 substrate by using the LTCC process. Experimental results show that the fundamental and third harmonics are suppressed above 15 dBc and 30 dBc, respectively, and the phase noise of push-push VCDRO is -97.5 dBc/Hz at an offset frequency of 100 kHz from the carrier. The proposed frequency tuning structure has a tuning range of 4.46 MHz over a control voltage of 1-11 V. This push-push VCDRO has a miniature size of 15 mm×15 mm. The proposed design and fabrication techniques for a push-push oscillator seem to be applicable in many space and commercial VCDRO products.

Design and Fabrication of Ka-band Push-push oscillator Using Dielectric Resonator (유전체 공진기를 이용한 Ka-band용 Push-push 발진기의 설계 및 구현)

  • 김민호;김병희;박천석
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.385-388
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    • 2000
  • In this paper, the Ka-band Dielectric resonator oscillator has been designed and fabricated. The resonator network was simulated using HFSS program. The design method of an oscillator is the small-signal S-parameter design. The Push-push DRO employs a hetero junction FET (NE32484A). The fabricated Push-push DRO shows such characteristics as the phase noise -106 ㏈c/Hz at the 100 ㎑ frequency offset. the output power and fundamental frequency surpression were -6 ㏈m and -29 ㏈c, respectively.

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Design and Construction of a Push-Push Dielectric Resonator Oscillator at K-band (K-band용 Push-Push 유전체 공진 발진기의 설계 및 제작)

  • 이주열;이찬주;홍의석
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.2
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    • pp.8-17
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    • 1992
  • In this paper a push-push oscillator using DR (dielectric resonator) at K-band is designed and constructed. Two identical oscillators are arranged in a push-push configuration that has the frequency of oscillator that is twice frequency each oscillator. A dielectric resonator is placed at the input of an active two-port device(FET) yielding a stable frequency source. The oscillators realized with this technique exhibit excellent spectral purity and cancellation of fundamental frequency.

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Design of A Push Content Generator for Push Service in Wireless Application Protocol (WAP기반 Push 서비스를 위한 Push Content Generator 설계)

  • 이정은;박병화;신동일;신동규
    • Proceedings of the Korean Information Science Society Conference
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    • 2000.10c
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    • pp.132-134
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    • 2000
  • 무선 인터넷의 급속한 발전과 더불어 모바일 인터넷에서 요구되는 기능이 점점 다양화되어 가고 있다. 특히 WAP)Wireless Application Protocol)상에서 지원되는 Push 서비스의 요구가 늘어나고 있다. 본 논문에서는 WAP상에서 사용하는 Push message의 보다 쉬운 구현을 위해 Push 서비스의 구조와 동작 원리를 이해하고 Push Content Generator의 설계에 대해 기술한다.

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