• Korean Journal of Metals and Materials
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• v.46 no.1
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• pp.33-38
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• 2008

The interfacial reactions and shear strength of pure Sn solder bump were investigated with different under bump metallizations (UBMs) and reflow numbers. Two different UBMs were employed in this study: Cu and Ni. Cu6Sn5 and Cu3Sn intermetallic compounds (IMCs) were formed at the bump/Cu UBM interface, whereas only a Ni3Sn4 IMC was formed at the bump/Ni UBM interface. These IMCs grew with increasing reflow number. The growth of the Cu-Sn IMCs was faster than that of the Ni-Sn IMC. These interfacial reactions greatly affected the shear properties of the bumps.

• Resources Recycling
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• v.24 no.3
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• pp.11-15
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• 2015

In order to develop a technology for the recovery of pure tin from the Sn containing industrial wastes (SIWs), a process consisted of high temperature reduction and electrorefining was investigated. The tin which exists as oxide in SIWs was successfully reduced by two consecutive high temperature treatments and 92.7% of the tin was recovered. The purity of the tin thus obtained was increased to 99.87% by electrorefining. By applying the results obtained in this work, a commercial process can be developed to produce pure tin metals from domestic spent resources, which can reduce the amount of tin imported from abroad.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.55-62
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• 2004

The oxidation of pure Sn and high Pb-Sn alloys was investigated under different oxidizing conditions of temperature and humidity. Both the chemical nature and the amount of oxides were characterized using electrochemical reduction analysis by measuring the electrolytic reduction potential and total transferred electrical charges. For pure tin, SnO grew faster under humid condition than in dry air at $85^{\circ}C$. A very thin (<10 ${\AA}$) layer of SnO, was formed on the top surface under humid condition. The mixture of SnO and $SnO_2$ was found for oxidation at $150^{\circ}C$. XPS and AES were performed to support the result of oxide reduction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.328-328
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• 2007

$SnO_2$ has a high potential for electric and electronic applications. We have anodized pure tin metal and nano porous tin oxide film was obtained on pure Sn. Nano porous tin oxide were grown by anodization in nonaqueous-base electrolytes at different potentials between 5 V and 100 V. Pore size of ~100nm was observed by FE-SEM. Pore sizes as a function of applied voltage and anodizing time were characterized. We obtained nano porous tin oxide film having an uniform pore size at low temperature. High specific surface area of $SnO_2$ will be very useful for gas sensor, lithium battery, and dye sensitized solar cell.

• Journal of Korea Foundry Society
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• v.29 no.1
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• pp.45-51
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• 2009

Conventionally, Al-Sn bearing manufacturing involves casting the Al-Sn alloy and roll-bonding to a steel backing strip. This article will describe the microstructural control of Al-Sn metal bearing alloy following heat treatment. When the pure aluminum rod dipped in the melt of tin maintained below the melting point of aluminum, the melting of aluminum was accelerated with penetration of tin along the grain boundary of aluminum. The length of plate-shaped eutectic tin was decreased with heat treatment time. With even longer heat treatment time over 1 hour the length of eutectic tin didn't decrease any more, while resulting in coarsening of aluminum matrix. Exuded liquid of eutectic tin was formed at the surface of Al-Sn alloy after heat treatment even at below eutectic temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.496-499
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• 2000

In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt％ Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

• Resources Recycling
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• v.24 no.2
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• pp.62-68
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• 2015

The high pure tin production was conducted from crude-tin containing waste solder by electro-refining process. The electro-refining process maintained at 0.2V produced tin with purity of 99.98%, whereas a little increase of voltage to 0.3 V resulted tin purity of 99.92%. The high pure tin of 3N in the present process was produced by fixing the voltage at 0.3V. Considering the high pure tin production, the current density was maintained within $100-120A/m^2$ with current efficiency of 94%. Addition of sulfuric acid of 20 ~ 25 g/L to the electrolyte solution was performed in order to keep Pb (lead) concentration below 100 mg/L in the final tin product. The anode slime generated during electro refining process was analyzed by X-ray diffraction (XRD) study to understand the phases of impurities in it. It detected the presence of Cu and Ag in the slime as in the form of $Cu_6Sn_5$, $Ag_3Sn$, whereas Pb occurred as $PbSO_4$ compound.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.4
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• pp.497-502
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• 2019

Metal oxide nanostructures are promising materials for advanced applications, such as high sensitive gas sensors, and high capacitance lithium-ion batteries. In this study, tin oxide (SnO) nanostructures were grown on a Si wafer substrate using a two-zone horizontal furnace system for a various substrate temperatures. The raw material of tin dioxide ($SnO_2$) powder was vaporized at $1070^{\circ}C$ in an alumina crucible. High purity Ar gas, as a carrier gas, was flown with a flow rate of 1000 standard cubic centimeters per minute. The SnO nanostructures were grown on a Si substrate at $350{\sim}450^{\circ}C$ under 545 Pa for 30 minutes. The surface morphology of the as-grown SnO nanostructures on Si substrate was characterized by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Raman spectroscopy was used to confirm the phase of the as-grown SnO nanostructures. As the results, the as-grown tin oxide nanostructures exhibited a pure tin monoxide phase. As the substrate temperature was increased from $350^{\circ}C$ to $424^{\circ}C$, the thickness and grain size of the SnO nanostructures were increased. The SnO nanostructures grown at $450^{\circ}C$ exhibited complex polycrystalline structures, whereas the SnO nanostructures grown at $350^{\circ}C$ to $424^{\circ}C$ exhibited simple grain structures parallel to the substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.272.2-272.2
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• 2016

Copper-Tin (CuSn) thin films were synthsized by rf magnetron co-sputtering method with pure Cu and Sn metal targets with various rf powers and sputtering times. The obtained CuSn thin films were characterized by a surface profiler (alpha step), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), and contact angle measurement. The deposition rates were calculated by the thickness of CuSn thin films and sputtering times. We observed hexagonal Cu20Sn6 and cubic Cu39Sn11 phases from the films by XRD measurement. From the survey XPS spectra, the Cu and Sn main peaks were observed. Therefore, we could conclude CuSn thin films were successfully fabricated on the substrate in this study. The changes of oxidation states and chemical environment of the films were investigated with high resolution XPS spectra in the regions of Cu 2p, Cu LMM, and Sn 3d. Surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG) using the contact angle measurement. The total SFE of CuSn thin films decreased as rf power on Cu target increased. The contribution to the total SFE of dispersive SFE was relatively superior to polar SFE.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.104-107
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• 2001

In order to investigate the effect of Ge addition to the Cu matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt % Ge alloys were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$. The values of AC loss of Ge added wires were decreased to 40 % compare with no addition wire. Low AC loss was due to segregation of Ge rich layer in the Cu-Ge matrix. If Ge added wire with thin Nb filaments were fabricated, slow diffusion rate of Sn would be overcome and decreased AC loss that is weak Point of internal tin method.