• 제목/요약/키워드: pulse Laser Deposition(PLD) system.

검색결과 3건 처리시간 0.019초

고온 초전도 에피텍셜 박막을 이용한 SIR 마이크로스트립 대역통과 필터의 제작 및 특성연구 (Fabrication & Characteristics of SIR Microsrip Bandpass Filters using Deposition of High-Tc Superconducting Epitaxial Films)

  • 박경국;정동철;정용채;임성훈;임성우;한병성
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권5호
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    • pp.326-332
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    • 1999
  • In this paper, we designed and fabricated High-Tc Superconducting (HTS) microstrip bandpass filters using Stepped Impedance Resonators(SIR) and studied on their characteristics. The $high-T_c$ superconducting $Y_1Ba_2Cu_3O_{7-x}$ epitaxial films were deposited by Pulse Laser Deposition (PLD) system on MgO. The fabricated filters were designed so as to operate in Ku band with central frequency 17.25 GHz, bandwidth 2.896% and ripple 0.01 dB. These filters were composed of parallel coupled microstrip SIR of which impedance ratio (K) are 0.5, 1.5. In the measured response, HTS filters had showed insertion loss below -0.5 dB. For comparison with normal conducting filter, we fabricated the Au counterpart that consists of the resonators as K=1.5 in the same dimension and measured performance of the Au filter. In comparison, HTS filter designed optimally got superior response to gold conterpart.

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Growth of ZnTe Thin Films by Oxygen-plasma Assisted Pulsed Laser Deposition

  • Pak, Sang-Woo;Suh, Joo-Young;Lee, Dong-Uk;Kim, Eun-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.185-185
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    • 2011
  • ZnTe semiconductor is very attractive materials for optoelectronic devices in the visible green spectral region because of it has direct bandgap of 2.26 eV. The prototypes of ZnTe light emitting diodes (LEDs) have been reported [1], showing that their green emission peak closely matches the most sensitive region of the human eye. Another application to photovoltaics proved that ZnTe is useful for the production of high-efficiency multi-junction solar cells [2,3]. By using the pulse laser deposition system, ZnTe thin films were deposited on ZnO thin layer, which is grown on (0001) Al2O3substrates. To produce the plasma plume from an ablated ZnO and ZnTe target, a pulsed (10 Hz) YGA:Nd laser with energy density of 95 mJ/$cm^2$ and wavelength of 266 nm by a nonlinear fourth harmonic generator was used. The laser spot focused on the surface of the ZnO and ZnTe target by using an optical lens was approximately 1 mm2. The base pressure of the chamber was kept at a pressure around $10^{-6}$ Torr by using a turbo molecular pump. The oxygen gas flow was controlled around 3 sccm by using a mass flow controller system. During the ZnTe deposition, the substrate temperature was $400^{\circ}C$ and the ambient gas pressure was $10^{-2}$ Torr. The structural properties of the samples were analyzed by XRD measurement. The optical properties were investigated by using the photoluminescence spectra obtained with a 325 nm wavelength He-Cd laser. The film surface and carrier concentration were analyzed by an atomic force microscope and Hall measurement system.

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펄스레이저 증착법을 이용한 대면적 BSTO 박막의 성장 (Growth of Large Area BSTO Thin Films using Pulsed Laser Deposition)

  • 강대원;곽민환;강승범;백문철;최상국;김성일;류한철;김지선;정세영;정동철;강광용;이병영
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.249-249
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    • 2009
  • We have grown large area BSTO($(Ba_{1-x}Sr_x)TiO_3$) thin films (x=0.4) on 2 inch diameter MgO (001) single crystal substrates using a pulse laser deposition(PLD) system. Substrate temperature and oxygen pressure in the deposition chamber, and the laser optics for ablating a target have been controlled to obtain the uniform thickness and preferred orientation of the films. Results of x-ray diffraction and rocking curve analysis revealed that the BSTO films were grown on MgO substrates with a preferred orientation (002), and the full width half maximum of the rocking curve was measured to be 0.86 degree at optimum condition. Roughness of the films have been measured to be $3.42{\AA}$ rms by using atomic force microscopy. We have successfully deposited the large area BSTO thin films of $4000{\AA}$ thickness on 50 mm diameter MgO substrates.

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