• 정보저장시스템학회논문집
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• 제3권1호
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• pp.47-53
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• 2007

In this paper, a thermo-piezoelectric mechanism with integrated heaters and piezoelectric sensors has been studied for low power probe-based data storage. Silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been developed to improve the uniformity of cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. And, the $34\times34$ probe array integrated with CMOS circuits has been successfully developed by simple one-step bonding process. The process can simplify the process step and reduce tip wear using silicon nitride tip.

• 정보저장시스템학회논문집
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• 제2권2호
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• pp.96-99
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• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• 제어로봇시스템학회지
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• 제8권6호
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• pp.11-17
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• 2002

• 인재니움
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• 제8권2호
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• pp.51-57
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• 2001

• JSTS:Journal of Semiconductor Technology and Science
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• 제1권1호
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• pp.84-93
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• 2001

An electromagnetic micro x-y stage for probe-based data storage (PDS) has been fabricated. The x-y stage consists of a silicon body inside which planar copper coils are embedded, a glass substrate bonded to the silicon body, and eight permanent magnets. The dimensions of flexures and copper coils were determined to yield $100{\;}\mu\textrm{m}$ in x and y directions under 50 mA of supplied current and to have 440 Hz of natural frequency. For the application to PDS devices, electromagnetic stage should have flat top surface for the prevention of its interference with multi-probe array, and have coils with low resistance for low power consumption. In order to satisfy these design criteria, conducting planar copper coils have been electroplated within silicon trenches which have high aspect ratio ($5{\;}\mu\textrm{m}$in width and $30{\;}\mu\textrm{m}$in depth). Silicon flexures with a height of $250{\;}\mu\textrm{m}$ were fabricated by using inductively coupled plasma reactive ion etching (ICP-RIE). The characteristics of a fabricated electromagnetic stage were measured by using laser doppler vibrometer (LDV) and dynamic signal analyzer (DSA). The DC gain was $0.16{\;}\mu\textrm{m}/mA$ and the maximum displacement was $42{\;}\mu\textrm{m}$ at a current of 180 mA. The measured natural frequency of the lowest mode was 325 Hz. Compared with the designed values, the lower natural frequency and DC gain of the fabricated device are due to the reverse-tapered ICP-RIE process and the incomplete assembly of the upper-sided permanent magnets for LDV measurements.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.373-378
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• 2004

Recently the electrostatic 2-axis MEMS stages have been fabricated for the purpose of an application to PSD (Probebased Storage Device). However, most of them have low area efficiency, which is undesirable as data storage devices, since all of the components (springs, comb electrodes, anchors, platform, etc.) are placed in-plane. In this paper, we present a novel structure of electrostatic 2-axis MEMS stage that is characterized by having large area platform. For large area efficiency, the actuator part consisting of mainly comb electrodes and springs is placed right below the platform. In this article, the structures and operational principle of the MEMS stages are described, followed by design procedure, structural and modal analysis using FEM(Finite Element Method). The area efficiency of the MEMS stage was designed to be about 55％, that is very large compared with conventional ones having a few percentage.

• 정보저장시스템학회논문집
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• 제3권2호
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• pp.59-65
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• 2007

Scanning Prove Microscope (SPM) - based Data Storage (SDS)는 Atomic Force Microscope (AFM)을 이용하여 Cantilever Tip 이 저장 장치 미디어에 나노미터 단위로 비트를 읽고, 쓰고 지우는 저장 장치로써, x, y 두 축을 이용한다. 따라서 축간 coupling 의 영향이 크게 발생한다. 따라서 축간 coupling 의 영향을 고려하여 제어기를 설계하여야 한다. 본 논문은 coupling 요소를 제거하기 위하여 Feedforward Decoupler 를 설계하여 Stage 의 입력 앞 단에 추가하는 방법을 제안하였다. Feedforward Decoupler 를 추가함으로써 coupling 요소가 줄어드는 것을 모의 실험을 통해 확인한다. 이를 통해 나노급으로 보다 정밀한 제어가 가능함을 확인하였다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문초록집
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• pp.360.1-360
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• 2002

Current information storage devices, such as HDD, CD/DVD-ROM/RW, probe-based memory and cabon nano tubes, are compared with biological information storage mechanisms in DNA and brain memory. Various biological components in living cells are analyzed based on "irreducible complexity" of intelligent design concept. Linear and arel density of information stored in the biological and mechanical storages are compared for the applications and developments of new storage devices.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문집
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• pp.582-587
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• 2002

Current information storage devices, such as HDD, CD/DVD-ROM/RW, probe-based memory and hologram memory, are compared with biological information storage mechanisms in DNA and brain memory. Newly developed approaches to overcome the limit of storage capacity are introduced in both magnetic and optical recording devices. Linear and areal density of information stored in the biological and mechanical storages are compared for the applications and developments of new storage devices.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.185-189
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• 2005

We reported here nano-scale electrical phase-change recording in amorphous $Ge_2Sb_2Te_5$ media using an atomic force microscope (AFM) having conducting probes. In recording process, a pulse voltage is applied to the conductive probe that touches the media surface to change locally the electrical resistivity of a film. However, in contact operation, tip/media wear and contamination could major obstacles, which degraded SNR, reproducibility, and lifetime. In order to overcome tip/media wear and contamination in contact mode operation, we adopted the W incorporated diamond-like carbon (W-DLC) films as a protective layer. Optimized mutilayer media were prepared by a hybrid deposition system of PECVD and RF magnetron sputtering. When suitable electrical pulses were applied to media through the conducting probe, it was observed that data bits as small as 25 nm in diameter have been written and read with good reproducibility, which corresponds to a data density of $1 Tbit/inch^2$. We concluded that stable electrical phase-change recording was possible mainly due to W-DLC layer, which played a role not only capping layer but also resistive layer.