• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.57-62
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• 1989

Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900$^{circ}C$ for 20 sec in Ar atmosphere. The sheet resistance of Ti-silicides was measured by 4-point probe, the thickness by $alpha$-step, and observed the behavior of As dopant in Si substrates by ASR. With increasing As doses, the thickness of Ti-silicides decreased and the sheet resistance of Ti-silicides increased. And we discussed the relationships between the above results and the factors of Si diffusion.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.5
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• pp.1300-1307
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• 1995

The effect of thermal stratification on the turbulent dispersion from a fine cylindrical heat source was experimentally examined in a wind tunnel with and without a strong temperature gradient. A 0.5 mm dia. nichrome wire was used as a line heat source. Turbulent intensities, r.m.s. value of temperature and convective heat fluxes were measured by using a hot-wire and cold-wire combination probe. The results show that the peack value and the spread of the vertical turbulent intensity for the stratified case are far lower than those in the neutral case, which indicates that the stable temperature gradient suppresses the vertical velocity component. All of the third order moments including heat fluxes measured in the stable condition have very small values than those of the neutral case. This nature suggests that the decrease of scalar fluctuations in the stably stratified flow is mainly due to the suppression ofthe turbulent diffusion processes by the stable stratification. A simple gradient model with a composite timescale which has a simple weighted algebraic mean between dynamic and thermal time scale yields reasonably good numerical values in comparison with the experimental data.

• Journal of Photoscience
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• v.8 no.3_4
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• pp.87-92
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• 2001

Intramolecular excimer formation of 1,3-di(1-pyrenyl)propane (Py-3-Py) and fluorescence polarization of 1,6-diphenyl-1,3,5-hexatriene (DPH) were used to investigate the effects of parathyroid hormone (PTH) on the bulk bilayer fluidity of the plasma membrane vesicles isolated from cultured osteoblasts (OB-PMV). In a dose-dependent manner, rat PTH-(1-34) [rPTH-(1-34)] increased the excimer to monomer fluorescence intensity ratio (I'/I) of Py-3-Py and decreased the anisotropy (r) of DPH in OB-PMV. This indicates that PTH increased both the lateral and rotational diffusion of the probes in OB-PMY. Selective quenching of DPH fluorescence by trinitrophenyl groups was utilized to examine the transbilayer fluidity asymmetry of OB-PMV. The anisotropy, limiting anisotropy, and order parameter of DPH in the inner monolayer were 0.024, 0.032, and 0.062 greater than calculated for the outer monolayer of OB-PMY. Selective quenching of DPH fluorescence by trinitrophenyl groups was also utilized to examine the transbilayer effects of PTH on the fluidity of OB-PMV. rPTH-(1-34) had a greater fluidizing effect on the outer monolayer as compared to the inner monolayer of OB-PMV. Thus, it has been proven that PTH exhibits a selective rather than nonselective fluidizing effect within transbilayer domains of OB-PMV.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.118-118
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• 1999

CVD방법에 의한 TiN 박막 형성에 있어서 ICP-CVD 방법이 대두되고 있다. 이것은 precursor에 대한 radical 형성, 식각된 패턴에서 양 벽의 self-shadowing 효과, 낮은 tress등으로 dense 한 박막을 얻을 수 있기 때문이다. TiN 박막은 Si 기판의 온도를 상온에서 50$0^{\circ}C$까지 유지하면서 TEMAT의 유량을 5-20sccm으로 변화시키면서 증착하였다. 증착 후 TiN 박막의 결정화에 따른 열처리는 Ar과 N2-가스분위기에서 in-situ로 증착하였다. 증착 후 TiN 박막증착 조건수립에 따른 플라즈마 특성진단은 전자의 온도와 밀도, 평균 전자밀도, 이온 에너지 분포, radical 분포, negative 이온분포 등으로 측정하였다. 플라즈마 변수에 따른 TiN 박막의 결정성과 상 변화는 XRD로 분석하였고, 조성비 및 TiN 박막의 원소화학적 상태, 결합에너지, 각 상에 따른 결합 에너지 천이정도, 초기 형성과정 및 반응기구 등은 RBS와 XPS로 조사하였다. TiN 박막의 표면상태, morphology 거칠기, TiN/Si(100)구조에서 계면상태 등은 SEM, AFM, 그리고 HRTEM으로 분석하였다. TiN 구조 박막의 비저항, carrier concentration 그리고 mobility 측정은 박막의 표면이 균일하고 bls-홀이 없는 것으로 하여 4-point probe 방법으로 측정하였다. 이들 분석으로부터 ICP-CVD 방법에 의하여 형성된 TiN 박막이 초고집적 반도체 소자의 contact barrier layer로서의 적용 가능성을 평가하였다.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• Journal of Technologic Dentistry
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• v.28 no.1
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• pp.19-26
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• 2006

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens of Ni-Cr alloy, which is 0.8mm in thickness, within the porcelain furnace of 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. Oxide film was observed form of the fired specimens with scanning electron microscope (SEM), and at the same time it measured Electron Probe Micro Analyzer (EPMA). The result of this study were as follows: 1. Cr oxide film and Nb oxide film were observed from the surface of specimen to be controlled at a rate of Nb 1%. 2. Nb oxide film was observed from the interface of specimens to be controlled at a rate of Nb 1% and 3%. 3. The stability of oxide films that treated in air were more stable than treated under vacuum.

• Journal of Mechanical Science and Technology
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• v.18 no.10
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• pp.1712-1721
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• 2004

A method of measuring the thermal diffusivity of semi-infinite solid material at room temperature using photothermal displacement is proposed. In previous works, within the constant thickness of material, the thermal diffusivity was determined by the magnitude and phase of deformation gradient as the relative position between the pump and probe beams. In this study, however, a complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in semi-infinite solid materials. The influence of parameters, such as, radius and modulation frequency of the pump beam and the thermal diffusivity, was studied. We propose a simple analysis method based on the zero -crossing position of real part of deformation gradient and the minimum position of phase as the relative position between two beams. It is independent of parameters such as power of pump beam, absorption coefficient, reflectivity, Poisson's ratio, and thermal expansion coefficient.

• Transactions of Materials Processing
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• v.18 no.1
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• pp.45-51
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• 2009

Shape memory alloy has been used to improve the tensile strength of composite by the occurrence of compressive residual stress in matrix using its shape memory effect. In order to fabricate shape memory alloy composite, TiNi alloy fiber and Al2024 sheets were used as reinforcing material and matrix, respectively. In this study, TiNi/Al2024 shape memory alloy composite was made by using hot press method. In order to investigate bonding condition between TiNi reinforcement and Al matrix, the micro-structure of interface was observed by using optical microscope and diffusion layer of interface was measured by using Electron Probe Micro Analyser. And the mechanical properties of composite with three parameters(volume fraction of fiber, cold rolling amount and test temperature) were obtained by tensile test. The most optimum bonding condition for fabrication the TiNi/Al2024 composite material was obtained as holding for 30min. under the pressure of 60MPa at 793K. The strength of composite material increased considerably with the volume fraction of fiber up to 7.0%. And the tensile strength of this composite increased with the reduction ratio and it also depends on the volume fraction of fiber.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.126-134
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• 1996

Tungsten silicide films were deposited on the phosphorus-doped poly-Si/SiO$_{2}$/Si-substrates by LPCVD (low pressue chemical vapor deposition). The formation and various properties of tungsten silicide processed by furnace annealing in N$_{2}$ ambient were evaluated by using XRD. AFM, 4-point probe and SEM. And the redistribution of phosphorus atoms has been observed by SIMS. The crystal structure of the as-deposited tungsten silicide films were transformed from the hexagonal to the tetragonal structure upon annealing at 550.deg. C. The surface roughness of tungsten polycide films were found to very smoothly upon annelaing at 850.deg. C and low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide low phosphorus concentration in polysilicon layer. The sheet resistance of tungsten polycide films are measured to be 2.4 .ohm./ㅁafter furnace annealing at 1100.deg. C, 30min. It was found that the sheet resistance of tungsten polycide films upon annealing above 1050.deg. C were independant on the phosphorus concentration of polysilicon layer and furnace annealing times. An out-diffusion of phosphorus impurity through tungsten silicide film after annealing in $O_{2}$ ambient revealed a remarkably low content of dopant by oxide capping.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.156-157
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• 2008

반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.