• 한국전기전자재료학회논문지
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• 제13권7호
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• pp.617-624
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• 2000

Zinc Oxide(ZnO) thin films on Si(100) substrate were deposited by RF magnetron reactive sputtering. The charcteristics of ZnO thin films on argon/oxygen(Ar/O$_2$)gas ratios RF power and substrate temperature were investigated by XRD, SEM, and AFM analyses. C-axis preferred orientation resistivity and surface roughness highly depended on Ar/O$_2$gas ratios. The resistivity of ZnO thin films rapidly increased with increasing oxygen ratio and the resistivity value of 9$\times$10$^{7}$ $\Omega$cm was obtained at a working pressure of 10 mTorr with Ar/O$_2$=50/50. The surface roughness was also improved with increasing oxygen ratio and the ZnO films deposited with Ar/O$_2$=50/50 showed the excellent roughness value of 28.7$\AA$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.302-302
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• 2007

The $SrRuO_3$/Si thin film electrodes are grown with (00l) preferred orientations on SrO buffered-Si (001) substrates by pulsed laser deposition. The optimum conditions of SrO buffer layers for $SrRuO_3$ preferred orientations are the deposition temperature of $700^{\circ}C$, deposition pressure of $1\;{\times}\;10^{-6}\;Torr$, and the thickness of 6 nm. The 100nm thick-$SrRuO_3$ bottom electrodes deposited above $650^{\circ}C$ on SrO buffered-Si (001) substrates have a rms roughness of approximately $5.0\;{\AA}$ and a resistivity of 1700 -cm, exhibiting a (00l) relationship. The 100nm thick-$Pb(Zr_{0.2}Ti_{0.8})O_3$ thin films deposited at $575^{\circ}C$ have a (00l) preferred orientation and exhibit $2P_r$ of $40\;C/cm^2$, $E_c$ of 100 kV/cm, and leakage current of about $1\;{\times}\;10^{-7}\;A/cm^2$ at 1V.

• 한국분말재료학회지
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• 제20권1호
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• pp.19-23
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• 2013

Ru films were successfully prepared by plasma-enhanced atomic layer deposition (PEALD) using $Ru(EtCp)_2$ and $NH_3$ plasma. To optimize Ru PEALD process, the effect of growth temperature, $NH_3$ plasma power and $NH_3$ plasma time on the growth rate and preferred orientation of the deposited film was systemically investigated. At a growth temperature of $270^{\circ}C$ and $NH_3$ plasma power of 100W, the saturated growth rate of 0.038 nm/cycle was obtained on the flat $SiO_2$/Si substrate when the $Ru(EtCp)_2$ and $NH_3$ plasma time was 7 and 10 sec, respectively. When the growth temperature was decreased, however, an increased $NH_3$ plasma time was required to obtain a saturated growth rate of 0.038 nm/cycle. Also, $NH_3$ plasma power higher than 40 W was required to obtain a saturated growth rate of 0.038 nm/cycle even at a growth temperature of $270^{\circ}C$. However, (002) preferred orientation of Ru film was only observed at higher plasma power than 100W. Moreover, the saturation condition obtained on the flat $SiO_2$/Si substrate resulted in poor step coverage of Ru on the trench pattern with an aspect ratio of 8:1, and longer $NH_3$ plasma time improved the step coverage.

• 한국물환경학회지
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• 제38권1호
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• pp.19-30
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• 2022

Climate change has increased the average air temperature. Rising air temperature are absorbed by water bodies, leading to increasing water temperature. Increased water temperature will cause eutrophication and excess algal growth, which will reduce water quality. In this study, long-term trends of air and water temperatures in the Han-river basin over the period of 1997-2020 were discussed to assess the impacts of climate change. Future (~2100s) levels of air temperature were predicted based on the climate change scenarios (Representative concentration pathway (RCP) 2.6, 4.5, 6.0, and 8.5). The results showed that air and water temperatures rose at an average rate of 0.027℃ year^-1 and 0.038℃ year^-1 respectively, over the past 24 years (1997 to 2020). Future air temperatures under RCP 2.6, 4.5, 6.0, and 8.5 increased up to 0.32℃ 1.18℃, 2.14℃, and 3.51℃, respectively. An increasing water temperature could dissolve more minerals from the surrounding rock and will therefore have a higher electrical conductivity. It is the opposite when considering a gas, such as oxygen, dissolved in the water. Water temperature also governs the kinds of organisms that can live in rivers and lakes. Fish, insects, zooplankton, phytoplankton, and other aquatic species all have a preferred temperature range. As temperatures get too far above or below this preferred range, the number of individuals of the species decreases until finally there are none. Therefore, changes of water temperature that are induced by climate change have important implications on water supplies, water quality, and aquatic ecosystems of a watershed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.

• 한국진공학회지
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• 제8권3B호
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• pp.333-339
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• 1999

$RuO_2$ thin films were prepared with various deposition conditions by rf magnetron sputtering. The films were annealed in vacuum, air, and air-vacuum, after that, the structural and electrical properties of the films were investigated. As the substrate temperature increases, the preferred orientation of the films changes from (101) to (200), and the grain size increases; especially, at $500^{\circ}C$, the size considerably increases. The preferred orientation of the films changes from (200) to (101) and the roughness of surface increase with the increase in oxygen partial pressure. The lowest value of resistivity of $RuO_2$ we prepared is $1.5\times 10^{-5}\Omega\codt\textrm{cm}$ at the conditions of $400^{\circ}C$ and 10% of oxygen partial pressure. After the processes of annealing, the films deposited at $400^{\circ}C$ and a oxygen partial pressure of 10% were relatively stable. The films deposited at $500^{\circ}C$ have denser structure and smoother surface when the films are annealed in vacuum after annealing in air.

• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 1995년도 추계학술대회논문집
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• pp.167-171
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• 1995

The formation of preferred orientations in cold rolled and recrystallized Inconel 690 sheets was studied by the x-ray texture measurements and TEM observations. The increasing{220} pole intensity in the plane normal at the higher reductions was related to the{110}<112> texture component. The rolling texture of the Inconel 690 was the pure metal type. THe dislocation cells were found in the near{110}<112> oriented grains. The onset of deformation twins in the {112}<111>oriented grains. The onset of deformation twins in the {112}<111> oriented grains. The onset of deformation twins in the {112}<111> oriented grains caused the weakening of {112}<111> and the development of {552}<115> in the rolling texture. The annealing texture of the Inconel 690 sheets was dependent on the annealing temperature. The annealing texture of 750$^{\circ}C$ annealed sheets was similar to the cold rolling texture. The major preferred orientations of the 950$^{\circ}C$ annealed specimens were {112}<110> and {001}<110>. The formation of fine and closely spaced annealing twins in the specimen annealed at 1150$^{\circ}C$ led to the randomization of the annealing texture.

• 한국표면공학회지
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• 제29권6호
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• 한국의류학회지
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• 제25권2호
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• pp.287-292
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• 2001

This study was conducted to investigate preferred clothing selected by females for thermal comfort in follicular phase (FP) and luteal phase (LP) of the menstrual cycle. Eight healthy college students volunteered as subjects. They stayed for 60 minutes at $25^{\circ}C$, 55%RH (stage 1) for baseline followed by a 60 minute stay at 2$0^{\circ}C$, 55%RH (stage 2) in a climatic chamber. Obtained results were analyzed using paired t-test and repeated measures of ANOVA. Arm and hand skin temperatures were maintained higher in FP than in LP, while mean skin temperature did not show any significant difference between FP and LP. The subjects selected additional clothing faster in FP than in LP. Six of the subjects wore heavier clothing in FP than in LP, while two of them wore heavier in LP than in FP.

• 한국표면공학회지
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• 제18권2호
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• pp.53-60
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• 1985

The microstructure of zine electrodeposits was investigated by using zinc sulfate solution in still bath. The cathode current efficiency decreased with increasing current density, and decreasing temperature. The preferred orientation of the zinc electrodeposits changed from (10.3) texture to(10.${\ell}$)-(00.1)(${\ell}$=1, 2, 3) texture through (10.2)-(10.3) preferred orientation with increasing cathode over potential. The surface morphology of zinc electrodeposits changed from the dendritic growth with granular crystallites to the blocks of hexagonal crystallites packed together with increasing current density. The microstructure of cross section of the above deposits are the rough granular structure and columnar structure respectively.