• Transactions of the Korean Society of Automotive Engineers
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• v.14 no.3
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• pp.10-21
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• 2006

The aim in this study is to develop the combined EGR system with a non-thermal plasma reactor for reducing exhaust emissions and improving fuel economy in turbo intercooler ECU common-rail diesel engines. At the first step, in this paper, the characteristics of performance and $NO_x{\cdot}THC$ emissions under four kinds of engine loads are experimentally investigated by using a four-cycle, four-cylinder, direct injection type, water-cooled turbo intercooler ECU common-rail diesel engine with a combined plasma exhaust gas recirculation(EGR) system operating at three kinds of engine speeds. The EGR system is used to reduce $NO_x$ emissions, and the non-thermal plasma reactor and turbo intercooler system are used to reduce THC emissions. The plasma system is a flat-to-flat type reactor operated by a plasma power supply. The fuel is sprayed by pilot and main injections at the variable injection timing between BTDC $15^{\circ}$ and ATDC $1^{\circ}$ according to experimental conditions. It is found that the specific fuel consumption rate with EGR is increased, but the fuel economy is better than that of mechanical injection type diesel engine as compared with the same output. Results show that $NO_x$ emissions are decreased, but THC emissions are increased, as the EGR rate is elevated. $NO_x$ and THC emissions are also slightly decreased as the applied electrical voltage of the non-thermal plasma reactor is elevated. Thus one can conclude that the influence of EGR in $NO_x$ and THC emissions is larger than that of the non-thermal plasma reactor, but THC emissions are greatly influenced by the non-thermal plasma reactor as the EGR rate is elevated.

• Journal of the Korean institute of surface engineering
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• v.40 no.6
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• pp.254-257
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• 2007

TiN coating on tool steel has been widely used for the improvement of durability of tools. In this work, radical nitriding(RN) is carried out on SKD61 at $450^{\circ}C$ for 5 hours in the ammonia gas pressure $2.7{\times}10^3\;Pa$. The TiN coating is carried out by arc ion plating(AIP) with the process parameters: arc power 150 A, bias voltage -50V, coating time 40 minutes and nitrogen gas pressure $4{\times}10^3\;Pa$. Hardness, elastic modulus, friction coefficient and adhesion of TiN coating on substrates of both TiN/SKD61 and TiN/RN SKD61 coatings are investigated comparatively. The primary crystalline faces of TiN surface are(200) and(111) for TiN/SKD61 and TiN/RN SKD61 respectively. In addition to the primary phase, Fe phase exists in TiN/SKD61 coating, but not in TIN/RN SKD61. The hardness of TiN/RN SKD61 is about 700 Hv, 250 Hv(56%) higher than that of TiN/SKD61 at the near interface of TiN and substrates. At the TiN surface, hardness of TiN/RN SKD61 is 2,149 Hv, 71 Hv(3%) higher than that of TiN/SKD61. The elastic modulus of TiN coating is improved to 26.7 GPa(6%) by radical nitriding. The adhesion is improved by the RN coating showing no spalling. buckling and chipping on the scratch test track which are shown on the non-RN TiN/SKD61.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.42 no.2 s.302
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• pp.49-58
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• 2005

A new soft switching three-phase PWM rectifier with simple circuit configuration and high efficiency has been developed. The proposed circuit is a kind of the auxiliary resonant commutated Pole(ARCP)converter The conventional ARCP converter requires three-auxiliary reactors and six-auxiliary switches for the soft switching auxiliary circuit and for these switching elements, a gate drive circuit and a control circuit are required, resulting in high part as a disadvantage. In the main circuit proposed in this paper, the auxiliary soft switching circuit is composed of two-auxiliary reactors, two-auxiliary switches and several diodes. In addition, common use of the PWM control circuit for two-switches will make the control circuit of the auxiliary switches simple. By means of function of the soft switching auxiliary circuit, the main switching element performs zero voltage switching operation and the auxiliary switches perform the zero current switching. In this paper, the circuit configuration and the operational analysis of the proposed circuit are described at first and then, experimental results will be reported. By using a prototype with 5[kW] capacity, the conversion efficiency of maximum $98.8[\%]$ and the power factor of $99[\%]$ or higher were obtained.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.12
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• pp.84-89
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• 2010

In this paper, a novel voltage-controlled oscillator (VCO) using the microstrip square open loop dual split ring resonator is presented for reducing the phase noise. The square-shaped dual split ring resonator having the form of the microstrip square open loop is investigated to reduce the phase noise. Compared with the microstrip square open loop resonator and the microstrip square open loop split ring resonator as well as the conventional microstrip line resonator, the microstrip square dual split ring resonator has the larger coupling coefficient value, which makes a higher Q value, and has reduced the phase noise of VCO. The VCO with 1.7V power supply has the phase noise of -123.2~-122.0 dBc/Hz @ 100 kHz in the tuning range, 11.74~11.75 GHz. The figure of merit (FOM) of this VCO is-214.8~-221.7 dBc/Hz dBc/Hz @ 100 kHz in the same tuning range. Compared with VCO using the conventional microstrip line resonator, VCO using microstrip square open loop resonator, the phase noise of VCO using the proposed resonator has been improved in 26 dB, 10 dB, respectively.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.9 no.2
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• pp.58-67
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• 1995

The paper describes the variation of magnetic fields caused by the operation of induction motors. The measuring system consists of the self-integrating magnetic field sensor, amplifier, and active integrator. From the calibration experiments, the frequency bandwidth of the magnetic field measuring system ranges from 20[Hz] to 300[kHz] and sensitivity is 0.234(mV/$\mu\textrm{T}$]. The magnetic fields generated under steady state and starting operations of duction motor are recorded by the proposed measuring system, and the fast Fourier transformation(FFT) of the measured data is performed to analyze the harmonic components. A single pulsed magnetic field is strongly caused by direct starting the induction motor, and its peak value is greater than 5 times as compared with the steady state value. The long transient duration and high intensity originates from the large inductance and dynamic characteristic of the induction motor, During the steady state operation of induction motor, subharmonics of magnetic field components, which depend on the pole number of induction motor, are observed. The lower order power-line harmonics can be inferred from the voltage flicker and current ripple which are derived from the torque fluctuation of induction motor. In the case of the induction motor drived by inverter, the harmonics of magnetic field are much more than those caused by direct starting method and are found generally to increase with decreasing the driving frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.236-236
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• 2008

(Bi,La)$Ti_3O_{12}$(BLT) thin film is one of the most attractive materials for ferroelectric random access memory (FRAM) applications due to its some excellent properties such as high fatigue endurance, low processing temperature, and large remanent polarization [1-2]. The authors firstly investigated and reported the damascene process of chemical mechanical polishing (CMP) for BLT thin film capacitor on behalf of plasma etching process for fabrication of FRAM [3]. CMP process could prepare the BLT capacitors with the superior process efficiency to the plasma etching process without the well-known problems such as plasma damages and sloped sidewall, which was enough to apply to the fabrication of FRAM [2]. BLT-CMP characteristics showed the typical oxide-CMP characteristics which were related in both pressure and velocity according to Preston's equation and Hernandez's power law [2-4]. Good surface roughness was also obtained for the densification of multilevel memory structure by CMP process [3]. The well prepared BLT capacitors fabricated by CMP process should have the sufficient ferroelectric properties for FRAM; therefore, in this study the electrical properties of the BLT capacitor fabricated by CMP process were analyzed with the process parameters. Especially, the effects of CMP pressure, which had mainly affected the removal rate of BLT thin films [2], on the electrical properties were investigated. In order to check the influences of the pressure in eMP process on the ferroelectric properties of BLT thin films, the electrical test of the BLT capacitors was performed. The polarization-voltage (P-V) characteristics show a decreased the remanent polarization (Pr) value when CMP process was performed with the high pressure. The shape of the hysteresis loop is close to typical loop of BLT thin films in case of the specimen after CMP process with the pressures of 4.9 kPa; however, the shape of the hysteresis loop is not saturated due to high leakage current caused by structural and/or chemical damages in case of the specimen after CMP process with the pressures of 29.4 kPa. The leakage current density obtained with positive bias is one order lower than that with negative bias in case of 29.4 kPa, which was one or two order higher than in case of 4.9 kPa. The high pressure condition was not suitable for the damascene process of BLT thin films due to the defects in electrical properties although the better efficiency of process. by higher removal rate of BLT thin films was obtained with the high pressure of 29.4 kPa in the previous study [2].

• Proceedings of the Safety Management and Science Conference
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• 1999.11a
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• pp.543-563
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• 1999

For hazardous air pollutants(HAP) such as NO and $NO_2$ decomposition efficiency, power consumption, and applied voltage were investigated by SPCP(surface induced discharge plasma chemical processing) reactor to obtain optimum process variables and maximum decomposition efficiencies. Decomposition efficiency of HAP with various electric frequencies(5~50 kHz), flow rates(100~1,000 mL/min) initial concentrations(100~1,000 ppm), electrode materials(W, Cu, Al), electrode thickness(1, 2, 3 mm) and number of electrode windings(7, 9, 11) were measured. Experimental results showed that for the frequency of 10 kHz, the highest decomposition efficiency of 94.3% for NO and 84.7% for $NO_2$ were observed at the poser consumptions of 19.8 and 29W respectively and that decomposition efficiency decreased with increasing frequency above 20 kHz. Decomposition efficiency was increased with increasing residence times and with decreasing initial concentration of pollutants. Decomposition efficiency was increased with increasing thickness of discharge electrode and the highest decomposition efficiency was obtained for the electrode diameter of 3mm in this experiment. As the electrode material, decomposition efficiency was in order : tungsten(W), copper(Cu), aluminum(Al).

• Elastomers and Composites
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• v.39 no.2
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• pp.131-141
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• 2004

The recycling of waste XLPE(crosslinked polyethylene), which is a major source of scraps from high voltage power transmission cables, has been discussed. The waste XLPE scraps were ground into fine powder with various sizes from less than $100{\mu}m$ up to about $1000{\mu}m$ using two types of tailor-made pulverizers. The compounds were prepared in a modular intermeshing co-rotating twin screw extruder at various conditions such as different compositions, types and powder sizes of waste XLPE, screw configurations and various polymer matrices (LDPE, HDPE, PP, PS). The mechanical and rheological properties and the fracture surface or the compounds were investigated. It was found that an improved impact strength was obtained from the compound with white XLPE powder pulverized from the scraps without outer/inner semi-conductive layers. Generally, the impact strength increases with the content of XLPE but decreases with the size of XLPE. Especially for LDPE, the extrusion was possible up to 80 wt% loading of XLPE. Also, the impact strength increases with the number of kneading disc blocks in the given screw configurations. The melt viscosity of the compounds increases with increasing XLPE loading. However, the higher shear thinning behavior of the compounds at common shear rates implies proper processibility of the compounds. In addition, the impact strength for other polymer matrices used increases with XLPE and it is noticeable that the impact strength of PS/XLPE (80/20 wt%) compound was improved twice that of pure PS.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2004.05a
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• pp.29-33
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• 2004

In this paper, we took the basic experiment in order to explore the characteristics of optical CT(optical current transformer) for measuring high current in a superhigh voltage condition using faraday effect and wrote that. We used the 1,310[nm] Laser Diode for the source of light and PIN-Photodiode for receiver. The transmission line of light was composed of the single-mode fiber of 30[m] which could maintain the state of polarization in the optical fiber. The range of current was from 400[A] to 1300[A]. In addition, the temperature ranged from $20[^{\circ}C}]\;to\;50[^{\circ}C]$. In a same experiment condition, a power magnitude increases in proportion as input current is increasing and temperature become low. The maximum ratio of error in temperature of $50[^{\circ}C]$ appears 0.15[%] and the 0.16[%], 1.24[%] and 0.07[%] is ratio of error in respectively $40[^{\circ}C],\;30[^{\circ}C],\;and\;20[^{\circ}C]$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.423-424
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• 2011

This paper has proposed a 920 MHz RF front-end for IEEE 802.15.4g SUN (Smart Utility Network) systems. The proposed 920 MHz RF front-end consists of a driver amplifier, a low noise amplifier, and a RF switch. In the TX mode, the driver amplifier has been designed as a single-ended topology to remove a transformer which causes a loss of the output power from the driver amplifier. In addition, a RF switch is located in the RX path not the TX path. In the RX mode, the proposed low noise amplifier can provide a differential output signal when a single-ended input signal has been applied to. A LC resonant circuit is used as both a load of the drive amplifier and a input matching circuit of the low noise amplifier, reducing the chip area. The proposed 920 MHz RF Front-end has been implemented in a 0.18-um CMOS technology. It consumes 3.6 mA in driver amplifier and 3.1 mA in low noise amplifier from a 1.8 V supply voltage.