• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.6
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• pp.390-395
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• 2015

Molded insulation materials are widely used from large electric power transformer apparatus to small electrical machinery and apparatus. In this study, by adding MgO with the average particle of several tens nm and the excellent thermal conductivity into molding material, we improved the problem of insulation breakdown strength decrease according to rising temperature in overload or in bad environmental condition. We confirmed the life evaluation by using the insulation breakdown and inverse involution to investigate the electrical characteristics of nano-composites materials. By using a scanning electron microscope, it is confirmed that MgO power with the average particle size of several tens nm is distributed and the filler particles is uniformly distributed in the cross section of specimens. And it is confirmed that the insulation breakdown strength of Virgin specimens is rapidly decreased at the high temperature area. But it is confirmed that the insulation breakdown strength of specimens added MgO slow decreased by thermal properties in the high temperature area improved by the contribution of the heat radiation of MgO and the suppression of tree. The results of life prediction using inverse involution, it is confirmed that the life of nano-composites is improved by contribution of MgO according to the predicted insulation breakdown strength after 10 years of specimens added 5.0 wt% of MgO is increased about 2.9 times at RT, and 4.9 times at $100^{\circ}C$ than Virgin specimen, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.6
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• pp.1460-1464
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• 2010

In the paper, the breakdown voltage of Trench D-MOSFET have been analyzed by using MircoTec. The technology for characteristic analysis of device for high integration is changing rapidly. Therefore to understand characteristics of high-integrated device by computer simulation and fabricate the device having such characteristics became one of very important subjects. A Trench MOSFET is the most preferred power device for high voltage power applications. The oxide thickness and doping concentration in Trench MOSFET determines breakdown voltage and extensively influences on high voltage. We have investigated the breakdown voltage characteristics according to variation of doping concentration from $10^{15}cm^{-3}$ to $10^{17}cm^{-3}$ in this study. We have also investigated the breakdown voltage characteristics according to variation of oxide thickness and junction depth.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.190-193
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• 2010

Various power semiconductor devices have been developed and evolved since 1950s. Among them, IGBT is the most developed power semiconductor device which has high breakdown voltage, high current conduction and suitable switching speed which perform trade-offs between each other. In other words, there are trade-offs between a breakdown voltage and on-state voltage drop, and between on-state voltage drop and turn-off time. In this paper, the new structure is proposed to improve a trade-off between a breakdown voltage and on-state voltage drop. The proposed structure has a trench collector and this trench collector induces an accumulation layer at the bottom of an n-drift region during off-state. And this accumulation layer prevents expansion of depletion layer so that trapezoidal electric field distribution is performed in the n-drift region. As a result of this, breakdown voltage is increased without increasing on-state voltage drop. The electrical characteristics of the proposed IGBT is analyzed and optimized by using representative device simulator, TSUPREM4 and MEDICI. After optimization, the electrical characteristics of the proposed IGBT is compared with NPT IGBT which have the same device thickness. As a result of this, it can be confirmed that the proposed structure increases the breakdown voltage of 800 V than that of the conventional NPT IGBT without increasing the on-state voltage drop.

• Journal of Electrical Engineering and Technology
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• v.9 no.5
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• pp.1686-1693
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• 2014

In this paper, oil-paper samples composed of transformer windings were used to investigate the insulation degradation process subjected to partial discharge (PD), with artificial defects inside to simulate the PD induced insulation degradation. To determine appropriate test voltages, the breakdown time obtained through a group of accelerated electrical degradation tests under high voltages was firstly fitted by two-parameter Weibull model to acquire the average breakdown time, which was then applied to establish the inverse power law life model to choose advisable test voltages. During the electrical degradation process, PD signals were synchronously detected by an ultra-high frequency (UHF) sensor from inception to breakdown. For PD analysis, the whole degradation process was divided into ten stages, and chaos theory was introduced to analyze the variation of three chaotic parameters with the development of electrical degradation, namely the largest Lyapunov exponent, correlation dimension and Komogorov entropy of PD amplitude time series. It is shown that deterministic chaos of PD is confirmed during the oil-paper degradation process, and the obtained results provide a new effective tool for the diagnosis of degradation of oil-paper insulation subjected to PD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.143-143
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• 2009

본 논문은 2500V급 planar type의 NPT(Nun-Punch Through)형 IGBT설계 및 제작에 앞서 IGBT(Insulated Gate Bipolar Transistor)소자가 갖는 구조적 변수가 전기적 특성 (Breakdown Voltage, Turnoff Time, Saturation Voltage, 등)결과에 미치는 영향을 분석하여 IGBT 소자가 갖는 구조적 손실을 최적화 하는데 목표를 두었다. 최적화의 진행은 공정 시뮬레이터인 Tsuprem4와 디바이스 분석 시뮬레이터인 MEDICI를 이용하여 소자가 갖는 각각의 parameter값이 전기적 특성에 미치는 영향을 분석함으로 진행 되어졌으며, 향후 고속철 등과 같은 대용량 산업에 기여할 것으로 판단된다.

• Journal of IKEEE
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• v.14 no.3
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• pp.199-204
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• 2010

In this paper, we proposed trench field ring for breakdown voltage of power devices. The proposed trench field ring was improved 10% efficiency comparing with conventional field ring. we analyzed five parameters of trench field ring for design of trench field ring and carried out 2-D devices simulation and process simulations. That is, we analyzed number of field ring, juction depth, distance of field rings, trench width, doping profield. The proposed trench field ring was better to more 1000V.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1038-1041
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• 2002

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power device and applicate to another power device including IGBT, EST and etc,

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.179-182
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• 2002

XLPE compound have used for insulation of 22.9(kV) power cable. But tree retardant power cable has developed and is going to br used commonly. TR XLPE compound retard production and growth of water tree. In this paper, tensile strength, elongation at break, degree of crosslinking, lightning impulse test, AC breakdown test, cyclic aging for 14days and accelerated water treeing test of TR XLPE insulated power cable were examined according to the KEPCO buying spec. & AEIC CS 5-94 standards. before and after As the result, tensile strength, elongation at break and degree of crosslinking test results of TR XLPE insulation were higher than requirement values. After accelerated water treeing test for 120 days, 240 days and 360 days, AC breakdown voltages were not decreased for accelerated water treeing aging duration

• ETRI Journal
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• v.37 no.1
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• pp.97-106
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• 2015

In this paper, MOS-triggered silicon-controlled rectifier (SCR)-based electrostatic discharge (ESD) protection circuits for mobile application in 3.3 V I/O and SCR-based ESD protection circuits with floating N+/P+ diffusion regions for inverter and light-emitting diode driver applications in 20 V power clamps were designed. The breakdown voltage is induced by a grounded-gate NMOS (ggNMOS) in the MOS-triggered SCR-based ESD protection circuit for 3.3 V I/O. This lowers the breakdown voltage of the SCR by providing a trigger current to the P-well of the SCR. However, the operation resistance is increased compared to SCR, because additional diffusion regions increase the overall resistance of the protection circuit. To overcome this problem, the number of ggNMOS fingers was increased. The ESD protection circuit for the power clamp application at 20 V had a breakdown voltage of 23 V; the product of a high holding voltage by the N+/P+ floating diffusion region. The trigger voltage was improved by the partial insertion of a P-body to narrow the gap between the trigger and holding voltages. The ESD protection circuits for low- and high-voltage applications were designed using $0.18{\mu}m$ Bipolar-CMOS-DMOS technology, with $100{\mu}m$ width. Electrical characteristics and robustness are analyzed by a transmission line pulse measurement and an ESD pulse generator (ESS-6008).

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.244-247
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• 2004

The electrical insulating design is important to realize a HTS power cable because the cable is operated under the high voltage environment. For the insulation design of a HTS power cable, it is necessary to investigate the AC, impulse breakdown and partial discharge(PD) inception stress of liquid nitrogen/LPP composite insulation system. Based on these results, the electrical insulation of a HTS power cable is designed and Mini-model cables are manufactured. The manufactured Mini-model cables are evaluated that AC, impulse withstand voltage, breakdown and partial discharge inception stress and analyzed characteristics insulation of HTS cable bending condition according to this paper. From these tests, the AC, impulse withstand voltage test and partial discharge inception stress is satisfied "standard technical specification of KEPCO" in Korea and the breakdown voltage was 120kV.