• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.200-203
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• 2003

Ferroelectric europium-substitution $Bi_4Ti_3O_{12}$ thin films were fabricated by spin-coating onto a Pt/Ti/$SiO_2$/Si substrate. The $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) films have polycrystalline structure annealed at 700 C. We investigated that the influence of $Bi_4Ti_3O_{12}$ thin films by substituting for Bi ions with Bi ions using X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). From the XPS measurement, it was suggested that the stability of the metal-oxygen octahedral should be related to substitute for Bi ions with Eu ions at annealed $800^{\circ}C$. The BET thin films showed a large remanent polarization (2Pr) of $60.99C/cm^2$ at an applied voltage of 10 V. The BET thin films exhibited no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 50 kHz.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.12-13
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• 2006

Ferroelectric Cerium-substituted $Bi_4Ti_3O_{12}$ thin films with a thickness of 200 nm were deposited using the liquid delivery metal organic chemical vapor deposition process onto a Pt(111)/Ti/$SiO_2$/Si(100) substrate. At annealing temperature above $600^{\circ}C$, the BCT thin films became crystallized and exhibited a polycrystalline structure. The BCT thin film annealed at $720^{\circ}C$ showed a large remanent polarization ($2P_r$) of $44.56\;{\mu}C/cm^2$ at an applied voltage of 5V. The BCT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied electric field of ${\pm}5\;V$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Korean Journal of Materials Research
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• v.19 no.6
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• pp.319-324
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• 2009

The deposition behavior and structural and magnetic properties of electroless Co-B and Co-Fe-B deposits, as well as the amorphous ribbon substrates, were investigated. These Co-based alloy deposits exhibited characteristic polycrystalline structures and surface morphology and magnetic properties that were dependent on the type of amorphous substrates. The catalytic activity sequence of the amorphous ribbon electrodes for anodic oxidation of DMAB was estimated from the current density-potential curve in the anodic partial electrolytic bath that did not contain the metal ions. Both the deposition rate and potential in the initial region were obtained in order of the catalytic activity, depending on the alloy compositions of the substrates. The deposition rate linearly varied against the deposition time. The initial deposition potential may have also determined the structural and magnetic properties of the deposit based on the thickness of ${\mu}m$ order. Furthermore, a basic study of the electroless deposition processes on an amorphous ribbon substrate has been carried out in connection with the structural and magnetic properties of the deposits.

• The korean journal of orthodontics
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• v.37 no.4
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• pp.293-304
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• 2007

The purpose of this study was to estimate the fracture resistance of commercially available ceramic brackets to torsional force exerted from arch wires and to evaluate the characteristics of bracket fracture. Methods: Lingual root torque was applied to maxillary central incisor brackets with 0.022-inch slots by means of a $022\;{\times}\;028-inch$ stainless steel arch wire. A custom designed apparatus that attached to an Instron was used to test seven types of ceramic brackets (n = 15). The torque value and torque angle at fracture were measured. In order to evaluate the characteristics of failure, fracture sites and the failure patterns of brackets were examined with a Scanning Electron Microscope. Results: Crystal structure and manufacturing process of ceramic brackets had a significant effect on fracture resistance. Monocrystalline alumina (Inspire) brackets showed significantly greater resistance to torsional force than polycrystalline alumina brackets except InVu. There was no significant difference in fracture resistance during arch wire torsional force between ceramic brackets with metal slots and those without metal slots (p > 0.05). All Clarity brackets partially fractured only at the incisal slot base and the others broke at various locations. Conclusion: The fracture resistance of all the ceramic brackets during arch wire torsion appears to be adequate for clinical use.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.2
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• pp.45-50
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• 2022

Ga₂O₃ thin films were grown on n-type Si substrates at various growth temperatures of 500, 550, 600, 650 and 700℃. The Ga₂O₃ thin films grown at 500℃ and 550℃ were characterized as featureless flat surface. Grown at higher temperatures (600, 650, and 700℃) showed very rough surface morphology. To figure out the annealing effect on the thin films grown at relatively low temperatures (500, 550, 600, 650 and 700℃), the Ga₂O₃ films were thermally treated at 900℃ for 10 minutes. Crystal structure of the Ga₂O₃ films grown at 500 and 550℃ were changed from amorphous to polycrystalline structure with flat surface. Ga₂O₃ film grown at 550℃ was chosen for the fabrication of a Schottky barrier diode (SBD). Electrical properties of the SBDs depend on the thermal treatment were evaluated. A MSM type photodetector was made on the low temperature grown Ga₂O₃ thin film. The photocurrent for the illumination of 266 nm wavelength showed 5.32 times higher than dark current at the operating voltage of 10 V.

• Applied Chemistry for Engineering
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• v.34 no.3
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• pp.213-220
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• 2023

Mixed-matrix membranes (MMMs), which are composed of a polymer matrix filled with high-performance fillers as a dispersed phase, have been intensively studied for gas separations for the past 30 years. It has been demonstrated that MMMs exhibit superior gas separation performance compared to polymer membranes and are more scalable than polycrystalline membranes. Despite their potential, the commercialization of MMMs has yet to be reported due to several challenging issues. One of the major challenges of MMMs is the non-ideal interface between the continuous polymer phase and dispersed phase, which can result in defect formation (i.e., interfacial voids, etc.). With respect, many MMM studies have focused on addressing the issues through scientific approaches. The engineering approaches for facile and effective large-scale fabrication of MMMs, however, have been relatively underestimated. In this review paper, a novel strategy for fabricating MMMs in a facile and scalable manner using in situ metal-organic framework (MOF) formation is introduced. This new MMM fabrication methodology can effectively address the issues facing current MMMs, likely facilitating the commercialization of MMMs.

• Applied Chemistry for Engineering
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• v.3 no.3
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• pp.412-421
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• 1992

The superconducting thin films have shown a growing possibility for practical application in microelectronic fields in recent years. In this study, the high Tc superconducting Y-Ba-Cu-O thin films were prepared on various substrates by chemical vapor deposition method using organic metal chelates of $Y(thd)_3$, $Ba(thd)_2$, and $Cu(thd)_2$ as source materials. The deposition reactions were carried out on single crystalline MgO(100), YSZ(100), $SrTiO_3(100)$, and polycrystalline $SrTiO_3$ substrates. Deposition thickness of thin films was linearly increased with the increase of deposition time. It turned out that the Y-Ba-Cu-O thin films on MgO(100), YSZ(100), and $SrTiO_3(100)$ single crystal substrates showed superconductivities above liquid nitrogen temperature($T_{c,onset}=87{\sim}89K$, $T_{c,zero}=85{\sim}86K$), but the one on polycrystalline $SrTiO_3$ substrate did not.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of the Korean Academy of Esthetic Dentistry
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• v.24 no.2
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• pp.101-121
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• 2015

Zirconia polycrystalline (Y-TZP) showed better mechanical properties and superior resistance to fracture than other conventional dental ceramics. Zirconia-based ceramics have been successfully introduced into the clinic to fabricate fixed dental prostheses (FDPs), along with a dental computer-aided/computer-aided manufacturing (CAD/CAM) system. It has been clinically available as an alternative to the metal framework for fixed dental prostheses (FDPs). The most frequent clinical complication with zirconia-based FDPs was chipping of the veneering porcelain that was affected by many factors. Another option was full-contour zirconia FDPs using high translucent zirconia. Full-contour zirconia FDPs has many clinical advantages but it caused concern about the wear of antagonist enamel, because the hardness of Y-TZP was over double that of porcelain. However, many articles demonstrates that highly polished zirconia yielded lower antagonist wear compared with porcelains. In this article (1) advantages of full zirconia restorations, (2) clinical applications of zirconia restorations, (3) abutment preparation, (4) surface finish of zirconia restoration and antagonist enamel wear, (5) bond of zirconia with resin-based luting agents, (6) communication in clinical & lab.procedures for full zirconia restorations are reviewed.