• Journal of Sensor Science and Technology
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• v.19 no.5
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• pp.337-341
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• 2010

In this work, the nanocrystalline ZnO/polycrystalline(poly) aluminum nitride(AlN)/ Si-layered structure was fabricated for humidity sensor applications based on surface acoustic wave(SAW). The ZnO film was used as a sensitive material layer. The ZnO and AlN(0002) were deposited by a sol-gel process and a pulse reactive magnetron sputtering, respectively. The ZnO sensitive films coated on AlN have a hexagonal wurtzite structure after the thin films annealed at $400^{\circ}C$, $500^{\circ}C$ and $600^{\circ}C$. The surface of the film exhibits sponginess and a nanometer particle size(below 50 nm). The largest shift in the frequency response was at approximately 200 kHz(the relative humidity: 10 %~90 %) for the structure annealed at $400^{\circ}C$. The effect of the change in the environmental temperature on the frequency response of the SAW humidity sensor was also investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.252-252
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• 2009

In this work, the nanocrystalline ZnO/polycrystalline (poly) aluminum nitride (AlN)/Si structure was fabricated for humidity sensor applications based on surface acoustic wave (SAW). In this structure, the ZnO film was used as sensing material layer. These ZnO and AlN(0002) were deposited by so-gel process and a pulse reactive magnetron sputtering, respectively. These experimental results showed that the obtained SAW velocity on AlN film was about 5128 m/s at $h/\lambda$=0.0125 (h and $\lambda$ is thickness and wavelength, respectively). For ZnO sensing layers coated on AlN, films have hexagonal wurtzite structure and nanometer particle size. The crystalline size of ZnO films annealed at 400, 500, and 600 $^{\circ}C$ is 10.2, 29.1, and 38 nm, respectively. Surface of the film exhibits spongy which can adsorb steam in the air. The best quality of the ZnO film was obtained with annealing temperature at 500 $^{\circ}Cis$. The change in frequency response (127.9~127.85 MHz) of the SAW humidity sensor based on ZnO/AlN structure was measured along the change in humidity (41~69%). The structural properties of thin films wereinvestigated by XRD and SEM.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.112-115
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• 2010

Transparent conducting undoped and Al impurity doped ZnO films were deposited on glass substrate by spin coat technique using 24 days aged ZnO precursor solution with solution of ethanol and diethanolamine. The films were characterized by UV-Visible spectroscopy, X-ray diffraction (XRD), scanning electron microscope (SEM), electrical resistivity ($\rho$), carrier concentration (n), and hall mobility ($\mu$) measurements. XRD data show that the deposited film shows polycrystalline nature with hexagonal wurtzite structure with preferential orientation along (002) crystal plane. The SEM images show that surface morphology, porosity and grain sizes are affected by doping concentration. The Al doped samples show high transmittance and better resistivity. With increasing Al concentration only mild change in optical band gap is observed. Optical properties are not affected by aging of parent solution. A lowest resistivity ($8.5 \times 10^{-2}$ ohm cm) is observed at 2 atomic percent (at.%) Al. With further increase in Al concentration, the resistivity started to increase significantly. The decrease resistivity with increasing Al concentration can be attributed to increase in both carrier concentration and hall mobility.

• The Journal of the Korea institute of electronic communication sciences
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• v.15 no.4
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• pp.665-670
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• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.3
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• pp.691-698
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• 2010

In this study Al-doped ZnO (AZO) thin films have been fabricated on Eagle 2000 glass substrates at various substrate temperature ($100{\sim}500^{\circ}C$) and working pressure (10 ~ 40 mTorr) by RF magnetron sputtering in order to investigate the structural, electrical, and optical properties of the AZO thin films. The obtained films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The AZO thin films, which were deposited at $T=300^{\circ}C$ for 10 mTorr, shows the highest (002) orientation, and the full width at half maximum (FWHM) of the (002) diffraction peak is $0.42^{\circ}$. The lowest resistivity ($2.64{\times}10^{-3}\;{\Omega}cm$) with the highest cartier concentration ($5.29{\times}10^{20}\;cm^{-3}$) and a Hall mobility of ($6.23\;cm^2/Vs$) are obtained in the AZO thin films deposited at $T=300^{\circ}C$ for 10 mTorr. The optical transmittance in the visible region is approximately 80%, regardless of process conditions. The optical band-gap depends on the Al doping level as the substrate temperature increases and the working pressure decrease. The optical band-gap widening is proportional to cartier concentration due to the Burstein-Moss effect.