• Journal of Korean Dental Science
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• v.8 no.2
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• pp.82-88
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• 2015

Purpose: To evaluate the effect of light-curing on the immediate and delayed micro-shear bond strength (${\mu}SBS$) between yttria-tetragonal zirconia polycrystal (Y-TZP) ceramics and RelyX Ultimate when using Single Bond Universal (SBU). Materials and Methods: Y-TZP ceramic specimens were ground with #600-grit SiC paper. SBU was applied and RelyX Ultimate was mixed and placed on the Y-TZP surface. The specimens were divided into three groups depending on whether light curing was done after adhesive (SBU) and resin cement application: uncured after adhesive and uncured after resin cement application (UU); uncured after adhesive, but light cured after resin cement (UC); and light cured after adhesive and light cured resin cement (CC). The three groups were further divided depending on the timing of ${\mu}SBS$ testing: immediate at 24 hours (UUI, UCI, CCI) and delayed at 4 weeks (UUD, UCD, CCD). ${\mu}SBS$ was statistically analyzed using one-way ANOVA and Student-Newman-Keuls multiple comparison test (P<0.05). The surface of the fractured Y-TZP specimens was analyzed under a scanning electron microscope (SEM). Result: At 24 hours, ${\mu}SBS$ of UUI group ($8.60{\pm}2.06MPa$) was significantly lower than UCI group ($25.71{\pm}4.48MPa$) and CCI group ($29.54{\pm}3.62MPa$) (P<0.05). There was not any significant difference between UCI and CCI group (P>0.05). At 4 weeks, ${\mu}SBS$ of UUD group ($24.43{\pm}2.88MPa$) had significantly increased over time compared to UUI group (P<0.05). The SEM results showed mixed failure in UCI and CCI group, while UUI group showed adhesive failure. Conclusion: Light-curing of universal adhesive before or after application of RelyX Ultimate resin cement significantly improved the immediate ${\mu}SBS$ of resin cement to air-abrasion treated Y-TZP surface. After 4 weeks, the delayed ${\mu}SBS$ of the non-light curing group significantly improved to the level of light-cured groups.

• Journal of Dental Rehabilitation and Applied Science
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• v.26 no.3
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• pp.253-264
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• 2010

The purpose of this study is to know whether Yttrium-stabilized-tetragonal -zirconia-polycrystal(Y-TZP ceramic) gets enough shear bond strength for clinical uses by applying veneering composite resin through surface treatment on it and finally to compare it with the case of applying veneering porcelain. LavaTM zirconia frameworks(3M ESPE, Seefeld, Germany) were prepared. Group P was manufactured with LavaTM Ceram(3M ESPE, Seefeld, Germany) in cylindrical shape which has 4mm diameter, 5mm height. Group ZSR disposed sandblasting and applied silane, bonding agent and after that indirect composite resin was applied. Group ZRR got tribochemical coating by RocatecTM system(3M ESPE. Seefeld, Germany) and treated silane. Finally Group ZPR took the same treatment and applied LavaTM Ceram in the size of 0.3-0.5mm height. After burning out, sandblasting, HF and silane was applied. And then, indirect composite resin was applied. 1000 cycle thermocycling was performed in $5-55^{\circ}C$ and shear bond strength was measured. There were no significant differences between combining veneering porcelain to Y-TZP ceramic group and combining veneering resin to Y-TZP ceramic group in the aspect of shear bond strength (p>.05).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.08a
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• pp.84-91
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• 2002

The stochiometric composition of $AgGaS_2$/GaAs polycrystal source materials for the $AgGaS_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$/GaAs has tetragonal structure of which lattice constant an and Co were 5.756 $\AA$ and 10.305 $\AA$, respectively. $AgGaS_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal $AgGaS_2$/GaAs by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by $\alpha=8.695{\times}10^{-4}$ eV/K, and $\beta=332K$. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2$/GaAs epilayer, we have found that crystal field splitting ${\Delta}Cr$ was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of Dental Rehabilitation and Applied Science
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• v.37 no.4
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• pp.177-185
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• 2021

Clinical applications of translucent zirconia as well as traditional zirconia (3 mol% yttria stabilized tetragonal zirconia polycrystal, 3Y-TZP) are increasing. For this reason, studies on factors affecting the optical properties of dental zirconia have been continuously reported. The optical effect of dental zirconia may vary depending on the yttria content, the thickness of the prosthesis, the sintering process, polishing, glazing and cementation in laboratory and clinical procedures. Increasing the yttria concentration can reduce the masking effect. Translucency decreases as the thickness of the restoration increases, but the required thickness may vary depending on the properties of the zirconia block. The high-speed sintering method can shorten the manufacturing time, but in some cases, the translucency of the prosthesis may decrease. In addition, the optical properties can be affected by the surface roughness of zirconia and the polishing process. The use of an appropriate colored cement can help with the masking effect of zirconia and can be useful for color matching for more esthetic results.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.8
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• pp.818-823
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• 2012

In order to predict necking behaviour of aluminium sheets, a crystal plasticity model is introduced in the finite element analysis of tensile test. Due to the computational limits of time and memory, only a small part of tensile specimen is subjected to the analysis. Grains having different orientations are subjected to numerical tensile tests and each grain is discretized by many elements. In order to predict the sudden drop of load carrying capacity after necking, a well-known Cockcroft-Latham damage model is introduced. The mismatch of grain orientation causes stress concentration at several points and damage is evolved at these points. This phenomenon is similar to void nucleation. In the same way, void growth and void coalescence behaviours are well predicted in the analysis. For the comparison of prediction capability of necking, same model is subjected to finite element analysis using uniform material properties of polycrystal with and without damage. As a result, it is shown that the crystal plasticity model can be used in prediction of necking and fracture behavior of materials accurately.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.44.2-44.2
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• 2009

Polycrystalline materials suchas yttria and alumina have been applied as a plasma resisting material for the plasma processing chamber. However, polycrystal line material may easily generate particles and the particles are sources of contamination during the plasma enhanced process. Amorphous material can be suitable to prevent particle generation due to absence of grain-boundaries. We manufactured nitrogen-containing $SiO_2-Al_2O_3-Y_2O_3$ based glasses with various contents of silicon and fixed nitrogen content. The thermal properties, mechanical properties and plasma etching rate were evaluated and compared for the different composition samples. The plasma etching behavior was estimated using XPS with depth profiling. From the result, the plasma etching rate highly depends on the silicon content and it may results from very low volatile temperature of SiF4 generated during plasma etching. The silicon concentration at the plasma etched surface was very low besides the concentration of yttrium and aluminum was relatively high than that of silicon due to high volatile temperature of fluorine compounds which consisted with aluminum and yttrium. Therefore, we conclude that the samples having low silicon content should be considered to obtain low plasma etching rate for the plasma resisting material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.197-198
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• 2009

This paper describes the Raman scattering characteristics of polycrystalline (poly) 3C-SiC films, which were deposited on the thermally oxidized Si(100) substrate by the atmosphere pressure chemical vapor deposition (APCVD) method according to growth temperature. TO and LO phonon modes to 2.0m thick poly 3C-SiC deposited at $1180^{\circ}C$ were measured at 794.4 and $965.7\;cm^{-1}$ respectively. From the intensity ratio of $I_{(LO)}/I_{(TO)}$ 1.0 and the broad full width half maximum (FWHM) of TO modes, itcan be elucidated that the crystallinity of 3C-SiC forms polycrystal instead of disordered crystal and the crystal defect is small. At the interface between 3C-SiC and $SiO_2$, $1122.6\;cm^{-1}$ related to C-O bonding was measured. Here poly 3C-SiC admixes with nanoparticle graphite with the Raman shifts of D and G bands of C-C bonding 1355.8 and $1596.8\;cm^{-1}$. Using TO mode of 2.0 m thick poly 3C-SiC, the biaxial stress was calculated as 428 MPa.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.94-99
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• 1994

This work addresses the relationship between initial complex permeability and porosity in polycrystalline Mg-ferrite material. The initial permeability corresponds to Snoek theory except the sample with large grains. The frequency which initial real permeability, $\mu$' equal 1 due to domain rotation are found in the frequency range 50-80 [MHz]. Internal magnetic field which is considered as mainly anisotropy field is 100[Oe] which is obtained from the relationship between initial complex permeability and porosity in polycrystalline Mg-ferrite material. This is almost the half value of reported anisotropy field of single Mg-ferrite. The difference between them is almost due to domain wall effect in polycrystalIine Mg-ferrite material.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.349-352
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• 2006

The plastic deformation of polycrystalline materials is induced by changes of the microstructure when the loading is beyond the critical state of stress. Constitutive models for the crystal plasticity have the common objective which relates microscopic single crystals in the crystallographic texture to the macroscopic continuum point. In this paper, a new consistent tangent stiffness for the anisotropic elasto-viscoplastic analysis of polycrystalline deformation is developed, which can be used in the finite element analysis for the slip-dominated large deformation of polycrystalline materials. In order to calculate the consistent tangent stiffness, the state function is defined based on the consistency condition between the elastic and plastic stress. The rate of shearing increment($\Delta{\gamma}^{\alpha}$) is calculated with satisfying the consistency condition. The consistency condition becomes zero when the trial resolved shear stress($\tau^{{\alpha}^*}$) becomes resolved shear stress($\tau^{\alpha}$) at every step. Iterative method is utilized to calculate the rate of shearing increment based on the implicit backward Euler method. The consistent tangent stiffness can be formulated by differentiating the rate of shearing increment with total strain increment after the instant rate of shearing increment converges. The proposed tangent stiffness is applied to the ABAQUS/Standard by implementing in the ABAQUS/UMAT.

• The Korean Journal of Ceramics
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• v.5 no.1
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• pp.1-11
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• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.