• Journal of the Korean Magnetics Society
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• v.10 no.3
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• pp.106-111
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• 2000

The magnetic thin films can be prepared without vacuum process and under the low temperature (<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$(x=0.00~0.08) films and N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$(x=0.00~0.15) films on cover glass at the substrate temperature 90 $^{\circ}C$. The crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The lattice constant in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films increases but in the N $i_{x}$Z $n_{0.22}$F $e_{*}$2.78-x/ $O_4$films decrease with the composition parameter, x. The saturation magnetization in the M $n_{x}$Z $n_{0.22}$F $e_{2.78-x}$ $O_4$films does not greatly change, in agreement with observations on bulk samples.k samples.k samples.

• The Journal of Advanced Prosthodontics
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• v.1 no.3
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• pp.113-117
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• 2009

STATEMENT OF PROBLEM. Recently Yttrium-stabilized tetragonal zirconia polycrystal (Y-TZP) has been introduced due to superior flexural strength and fracture toughness compared to other dental ceramic systems. Although zirconia has outstanding mechanical properties, the phenomenon of decrease in the life-time of zirconia resulted from degradation in flexural strength after low temperature aging has been reported. PURPOSE. The objective of this study was to investigate degradation of flexural strength of Y-TZP ceramics after various low temperature aging treatments and to evaluate the phase stability and micro-structural change after aging by using X-ray diffraction analysis and a scanning electron microscope (SEM). MATERIAL AND METHODS. Y-TZP blocks of Vita In-Ceram YZ (Vita Zahnfabrik, Bad $S\ddot{a}ckingen$, Germany) were prepared in 40 mm (length) $\times$ 4 mm (width) $\times$ 3 mm (height) samples. Specimens were artificially aged in distilled water by heat-treatment at a temperature of 75, 100, 125, 150, 175, 200, and $225^{\circ}C$ for 10 hours, in order to induce the phase transformation at the surface. To measure the mechanical property, the specimens were subjected to a four-point bending test using a universal testing machine (Instron model 3365; Instron, Canton, Mass, USA). In addition, X-ray diffraction analysis (DMAX 2500; Rigaku, Tokyo, Japan) and SEM (Hitachi s4700; Jeol Ltd, Tokyo, Japan) were performed to estimate the phase transformation. The statistical analysis was done using SAS 9.1.3 (SAS institute, USA). The flexural strength data of the experimental groups were analyzed by one-way analysis of variance and to detect statistically significant differences ($\alpha$= .05). RESULTS. The mean flexural strength of sintered Vita In-Ceram YZ without autoclaving was 798 MPa. When applied aging temperature at below $125^{\circ}C$ for 10 hours, the flexural strength of Vita In-Ceram YZ increased up to 1,161 MPa. However, at above $150^{\circ}C$, the flexural strength started to decrease. Although low temperature aging caused the tetragonal-to-monoclinic phase transformation related to temperature, the minimum flexural strength was above 700 MPa. CONCLUSION. The monoclinic phase started to appear after aging treatment above $100^{\circ}C$. With the higher aging temperature, the fraction of monoclinic phase increased. The ratio of monoclinic/tetragonal + monoclinic phase reached a plateau value, circa 75% above $175^{\circ}C$. The point of monoclinic concentration at which the flexural strength begins to decrease was between 12% and 54%.

• Journal of Technologic Dentistry
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• v.34 no.2
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• pp.83-93
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• 2012

Purpose: The objective of this study is to find out physical properties and the flexural strength changed by the low temperature degradation of the block which is needed to make bio-prosthetic dentistry which is better than feldspar affiliated ceramic made by building up ceramic powder and also to apply this to the clinical use of zirconia monolithic all-ceramic crown. Methods: Flexural strength of each sample was evaluated before and after the Low Temperature Degradation, and physical properties of the Tetra Zirconia Block containing 3mol % was evaluated as well. The average and standard deviation of each experimental group were came out of the evaluation. Statistical package for social science 18.0 was used for statistics. Results: The average density of the monolithic all-ceramic crown was $6.0280{\pm}0.0147g/cm$, the relative density was 99.01 %. When the sample was sintered at $1480^{\circ}C$ the diameter of average particle was $396.62{\pm}33.71nm$. All the samples had no monolithic peak after XRD evaluation but only had tetragonal peak. There were statistically significant differences in the result of flexural strength of the samples evaluated after and before the low temperature degradation, the flexural strength before the low temperature degradation was $1747.40{\ss}{\acute{A}}$, at the temperature of $130^{\circ}C$ the flexural strength after the low temperature degradation was 1063.99MPa (p<0.001). There was statistically significant difference in the result of strength of 1020.07MPa after the low temperature degradation at the temperature of $200^{\circ}C$ (p<0.001). Conclusion: The block which was made for this evaluation possesses such an excellent strength among dental restorative materials that it is thought to have no problems to use for tetragonal zirconia polycrystal.

• Journal of Sensor Science and Technology
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• v.23 no.1
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• pp.51-57
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• 2014

The evaporating materials for $MgGa_2Se_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MgGa_2Se_4$ compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were $610^{\circ}C$ and $400^{\circ}C$, respectively.The source and substrate temperatures were $610^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MgGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.34\;eV-(8.81{\times}10^{-4}\;eV/K)T^2/(T+251\;K)$. After the as-grown $MgGa_2Se_4$ single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of $MgGa_2Se_4$ single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Mg}$, $V_{Se}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted $MgGa_2Se_4$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $MgGa_2Se_4$/GaAs did not form the native defects because Ga in $MgGa_2Se_4$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.5
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• pp.179-186
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• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.60-70
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• 1995

Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.

• Journal of dental hygiene science
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• v.13 no.3
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• pp.290-295
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• 2013

The purpose of this study was to investigate the shear bond strength between various commercial all-ceramic system core and veneering ceramics, and evaluate the clinical stability by comparing the conventional metal ceramic system. The test samples were divided into three groups: Ni-Cr alloy (metal bond), yttria-stabilized, tetragonal zirconia polycrystal (Y-TZP) (zirconia bond), lithium disilicate (lithium disilicate bond). The veneering porcelain recommended by the manufacturer for each type of material was fired to the core. After firing, the specimens were subjected to shear force in a universal testing machine. Load was applied at a crosshead speed of 0.50 mm/min until failure. Average shear strengths (mega pascal) were analyzed with a one-way analysis of variance and the Tukey test (${\alpha}$=0.05). The mean shear bond strength${\pm}$SD in MPa was $44.79{\pm}2.31$ in the Ni-Cr alloy group, $28.32{\pm}4.41$ in the Y-TZP group, $15.91{\pm}1.39$ in the Lithium disilicate group. The ANOVA showed a significant difference among groups (p<0.05). None of the all-ceramic system core and veneering ceramics could attain the high bond strength values of the metal ceramic combination.