• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.54-57
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• 2001

We studied the characteristics of polishing pad, which can apply STI-CMP process for global planarization of multilevel interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was defected less than 2 on JRlll pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and devise yield.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• International Journal of Precision Engineering and Manufacturing
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• 제5권2호
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• pp.32-38
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• 2004

The electrorheological(ER) fluid has been used to the ultraprecision polishing of single crystal silicon as new polishing slurry whose properties such as yield stress and particle structure changed with the application of an electric field. In this work, it is aimed to find the effective parameters in the ER fluid on material removal in the polishing system whose structure is similar to that of the simple hydrodynamic bearing. The generated pressure in the gap between a moving wall and a workpiece, as well as the electric field-induced stress of the mixture of ER fluid-abrasives, is evaluated experimentally, and their influence on the polishing of single crystal silicon is analyzed. Moreover, the behavior of abrasive and ER particles is described.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.439-440
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• 2012

• 한국정밀공학회지
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• 제19권12호
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• pp.134-141
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• 2002

The ER fluid can be one of efficient materials in ultraprecision polishing for optics, ceramics and semiconductors because of electrically controllable apparent viscosity. To finish small 3 dimensional structures such as the aspherical surface in optical elements, the possible arrangement of a tool, workpiece and auxiliary electrode is described. We examined the influence of the addition of a few abrasive particles on the performance of the ER fluid by measuring yield stress, and observed the behavior of abrasive particles in the ER fluid by a CCD camera, which is also theoretically predicted from the electromechanical principles of particles. On the basis of the above results, the steady flow analysis around the rotating micro tool is worked out considering the non-uniform electric field. Finally, Pyrex glass is polished using the mixture of the ER fluid and abrasive particles, and the effect of the electric field strength is evaluated.

• Applied Biological Chemistry
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• 제35권6호
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• pp.475-478
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• 1992

습식연미 도정조건 및 습식연미 도정쌀의 특성을 구명하기 위하여 일반도정시 강층 제거량별 및 가습량별로 습식연미 도정시험을 실시하였던 바 도정 적정 습식연미 도정조건은 일반도정으로 강층을 95% 제거한 후 5% 가습 연미하는 것이 가장 좋았다. 그리고 습식연미 도정쌀이 일반도정쌀 보다 현백률은 0.75% 낮았으며, 수분함량은 같았으나 백도는 3.5%나 높았고, 윤기가 매우 좋았다. 그리고 쌀을 수세하여 용출된 고형물 및 취반용액 중 용출고형물은 각각 0.30 및 2%, 정도 낮았다. 또한 습식연미 도정쌀의 저장성도 일반도정쌀 보다 좋았다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.496-500
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• 2004

A new, commercially available polishing process called magnetorheological finishing is used to polish and figure precision optics. To understand and model this process correctly it is important to determine the mechanical properties of the fluid under the influence of the magnetic field. Magnetorheological (MR) fluids are commonly modeled as Bingham fluids, so one of the essential properties to measure is the yield stress. Since MR fluids are inherently anisotropic, the yield stress will depend on the mutual orientation of the magnetic field and the direction of deformation. The relative orientation of the field and deformation in polishing does not coincide with common rheological setups, so a new rheometer has been designed and tested. This new magnetorheometer design has been shown to give correct stresses during calibration experiments using Newtonian fluids with a known viscosity. The measured stress has also been shown to have a magnitude consistent with published finite element approximations for magnetic fluids. The design of the instrument was complicated because of the requirements imposed upon the magnetic field, and the difficulty in satisfying the no slip boundary condition. Our results show the importance of having a homogeneous field in the test region during measurements. The solutions to these problems and discussion of the measurements on nonmagnetic and magnetic fluids are given.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.185-188
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• 2001

Chemical mechanical polishing(CMP) process is widely used for global planarization of inter-metal dielectric (IMD) layer and inter-layer dielectric (ILD) for deep sub-micron technology. However, as the IMD and ILD layer gets thinner, defects such as micro-scratch lead to severe circuit failure, which affect yield. In this paper, for the improvement of CMP Process, deionized water (DIW) pressure, purified $N_2$ (P$N_2$) gas, slurry filter and high spray bar were installed. Our experimental results show that DIW pressure and P$N_2$ gas factors were not related with removal rate, but edge hot-spot of patterned wafer had a serious relation. Also, the filter installation in CMP polisher could reduce defects after CMP process, it is shown that slurry filter plays an important role in determining consumable pad lifetime. The filter lifetime is dominated by the defects. However, the slurry filter is impossible to prevent defect-causing particles perfectly. Thus, we suggest that it is necessary to install the high spray bar of de-ionized water (DIW) with high pressure, to overcome the weak-point of slurry filter. Finally, we could expect the improvements of throughput, yield and stability in the ULSI fabrication process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.136-139
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• 2004

The requirement of planarity, such as with-in-wafer nonuniformity, post thickness range, have become increasingly stringent as critical dimensions of devices are decreased and a better control of a planarity become important. The key factors influencing the planarity capability of the CMP process have been well understood through numerous related experiments. These usually include parameters such as process pressures, relative velocities, slurry temperature, polishing pad materials and polishing head structure. Many study have been done about polishing pad and its groove structure because it's considered as one of the key factors which can decide wafer uniformity directly. But, not many study have been done about polisher head structure, especially about polisher head plate design. The purpose of this paper is to know how the plate structure can affect wafer uniformity and how to deteriorate wafer yield. Furthermore, we studied several new designed plate to improve wafer uniformity and also improve wafer yield.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.1-5
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• 2001

STI(shallow trench isolation)-CMP(chemical mechanical polishing) process have been substituted for LOCOS(local oxidation of silicon) process to obtain global planarization in the below sub-0.5㎛ technology. However TI-CMP process, especially TI-CMP with RIE(reactive ion etching) etch back process, has some kinds of defect like nitride residue, torn oxide defect, etc. In this paper, we studied how to reduced torn oxide defects after STI-CMP with RIE etch back processed. Although torn oxide defects which can occur on trench area is not deep and not severe, torn oxide defects on moat area is not deep and not severe, torn oxide defects on moat area is sometimes very deep and makes the yield loss. Thus, we did test on pattern wafers which go through trench process, APECVD process, and RIE etch back process by using an IPEC 472 polisher, IC1000/SUVA4 PAD and KOH base slurry to reduce the number of torn defects and to study what is the origin of torn oxide defects.