• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.313-316
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• 2004

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics(ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.188-191
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.7
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• pp.22-29
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• 2004

As a result of high integration of semiconductor device, the global planarization of multi-layer structures is necessary. So the chemical mechanical polishing(CMP) is widely applied to manufacturing the dielectric layer and metal line in the semiconductor device. CMP process is under influence of polisher, pad, slurry, and process itself, etc. In comparison with the general CMP which uses the slurry including abrasives, fixed abrasive pad takes advantage of planarity, resulting from decreasing pattern selectivity and defects such as dishing & erosion due to the reduction of abrasive concentration especially. This paper introduces the manufacturing technique of fixed abrasive pad using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. And the tungsten CMP using fixed abrasive pad achieved the good conclusion in terms of the removal rate, non-uniformity, surface roughness, material selectivity, micro-scratch free contemporary with the pad life-time.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.153-158
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• 2003

This thesis deal with ferroelectric and ferromagnetic materials. PZT/Ferrite ceramics were made by the making process using PZT powder and garnet ferrite powder. PZT and ferrite are mixed as much 90%-10%, 50%-50%, and so on. After making samples, we are polishing samples until thickness is 0.1~0.2mm. We measured all kinds of samples in room temperature and applied magnetic field from -4500 to 4500 Oersted and conducted test of magnetical and electrical measurement using VSM and lpC resolution electrometer calibrated with RT66A pulsed tester. From this measurement, we can calculate tunability of these samples using C value obtained from P-E loop. As a result, it was able to measure magnetic characteristic when two matter had each other component ratio, and it was compound. However, it confirmed the possibility that was able to have ferroelectric characteristic with you in PZT 90% and ferrite 10%. Therefore, If this thing comes for PZT 50% and ferrite 50% have ferroelectric characteristic as him in a compound sample ore, can use this in an oscillator, supersonic waves detector in addition to a piezoelectric element. It may contribute to multipurpose of an element and demands such as a miniaturization of equipment, efficiency, reduce of a price which can use a characteristic of two components.

• Restorative Dentistry and Endodontics
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• v.16 no.2
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• pp.18-32
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• 1991

The purpose of this study was to observe characteristic properties of amalgam through the polarization curves and SEM images from 4 type amalgams (Amalcap, Shofu spherical. Dispersalloy and Tytin) with 3 different surface finish procedures (polishing, burnishing and carving) by using the potentiostats (EG & GPARC) and SEM (Jeol JSM-35). After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of mechanical amalgamator (Samki), the triturated mass was inserted into the cylndrical metal mold which was 12 mm in diameter and 10 mm in height and was pressed with $100kg/cm^2$. 4 specimens of each type amalgam were burnished with egg burnisher and another 4 specimens of each type amalgam were carved with Hollenback carver. Above 8 specimens and remaining untreated 4 specimens were stored at room temperature for about 7 days. Untreated 4 specimens of each type amalgam were polished with abrasive papers (Deer) from #400 to #1200 and finally on the polishing cloth with $0.5{\mu}m$ and $0.06{\mu}m$ $Al_2O_3 $ powder suspended water. Anodic polarization measurements was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution at $37^{\circ}C$. The open circuit potential was determined after 30 minutes immersion of specimen in electrolyte. The scan rate was 1 mV/sec and the surface area of amalgam exposed to the solution was $0.64cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). SEM images of each specimen were taken after + 800 mV (SCE) polarization. The results were as follows: 1. The corrosion potential of high copper amalgam was more anodic than that of low copper amalgam. 2. The polished amalgam were more resistant to corrosion than any other burnished and carved amalgam. 3. In the case of polishing, current density of high copper amalgam was lower than that of low copper amalgam.

• Analytical Science and Technology
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• v.19 no.5
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• pp.394-399
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• 2006

The polishing performance and the relationships of electrochemistry depending upon oxidizers and additives in the tungsten CMP slurry used in semiconductor industry were investigated. Hydrogen peroxide, ferric nitrate and potassium iodate were used as oxidizers and they showed different oxidation reactions on tungsten film depending on the kind of oxidizers and pH of slurry. The differences influenced the polishing performance. Etching reaction was predominated in the hydrogen peroxide. However, passivation reaction was prevailed in ferric nitrate and potassium iodate. TMAH and KOH raised the potential energy and removal rate of tungsten, and improved a dispersion characteristic of slurry by increasing absolute value of zeta potential. Addition of 100 ppm of poly(acrylic acid) of M.W. 250,000 improved dispersion ability.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.980-986
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• 2003

As the ultra precision grinding can be applied to wafering process by the refinement of the abrasive, the development of high stiffness equipment and grinding skill, the conventional wafering process which consists of lapping, etching, Ist, 2nd and 3rd polishing could be exchanged to the new process which consists of precision surface grinding, final polishing and post cleaning. Especially, the ultra precision grinding of wafer improves the flatness of wafer and the efficiency of production. Futhermore, it has been not only used in bare wafer grinding, but also applied to wafer back grinding and SOI wafer grinding. This paper focused on the effect of the wheel path density and relative velocity on the characteristic of ground wafer in in-feed grinding with cup-wheel. It seems that the variation of the parameters in radial direction of wafer results in the non-uniform surface quality over the wafer. So, in this paper, the geometric analysis on grinding process is carried out, and then, the effect of the parameters on wafer surface quality is evaluated

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.127-132
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• 2005

The optical glass lens is required high dimensional precision such as the lack of defect. In this paper, we examined the detectable defect by using the resonant ultrasound spectroscopy(RUS). The RUS is the measurement system which is to excite the specimen and to inspect the differences of resonant frequency pattern between acceptable specimen and specimen which has some defects. In this paper, for nondestructive evaluation by using RUS, we measured the resonant frequency of each specimen which is spherical and aspherical glass lens. With the results, we knew the polishing processing degree of spherical glass lens by the measured resonant frequency and could evaluate the characteristic of aspherical glass lens about some flaws.

• Proceedings of the Korean Society of Postharvest Science and Technology of Agricultural Products Conference
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• 2003.10a
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• pp.46-50
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• 2003

In order to develop a new variety of rice that adapts to the climate of Aomori prefecture and possesses characteristics suitable for production of high quality Japanese sake, artificial cross experiments were executed between Yamadanishiki, which is widely used nationwide as an authentic variety of rice for sake production, and Hanafubuki, which was peviously developed by Aomori prefecture. An excellent hybrid, named Hanaomoi, was selected and fixed by a series of selection experiments and systematic cultivation. Unpolished Hanaomoi rice contained less amount of protein than Yamadanishiki and Hanafubuki. Unpolished rice of Hanaomoi was harder than Yamadanishiri and Hanafubuki, therefore polishing treatment was done in high yield and one could obtain a high degree of polish on the rice(namely 40% polishing). These features are advantageous to production of high quality of sake.Test brewing using 40% polished Hanaomoi gave rise to a characteristic sake that contained a slightly higher amount of alcohol and flavor components than Yamadanishiki and Hanafubuki. Sensory tests concluded that sake from Hanaomoi was as superior as the one from authentic Yamadanishiki. Hanaomoi is a promising variety of rice suitable for production of a high quality sake exclusive to Aomori prefecture.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.49-49
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• 2007

최근 반도체 소자의 고집적화와 나노 (nano) 크기의 회로 선폭으로 인해 기존에 사용되었던 텅스텐이나 알루미늄 금속배선보다, 낮은 전기저항과 높은 electro-migration resistance가 필요한 Cu 금속배선이 주목받게 되었다. 하지만, Cu CMP 공정 시 높은 압력으로 인하여 low-k 유전체막의 손상과 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 본 논문에서는, $KNO_3$ 전해액의 농도가 Cu 표면에 미치는 영향을 알아보기 위해 Tafel Curve와 CV (cyclic voltammograms)법을 사용하여 전기화학적 특징을 알아보았고 scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray Diffraction (XRD) 분석을 통해 금속표면을 비교 분석하였다.