• Transactions on Control, Automation and Systems Engineering
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• v.3 no.1
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• pp.58-65
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• 2001

This paper proposes a self tuning fuzzy inference method by the genetic algorithm in the fuzzy-sliding mode control for a robot. Using this method, the number of inference rules and the shape of membership functions are optimized without an expert in robotics. The fuzzy outputs of the consequent part are updated by the gradient descent method. And, it is guaranteed that he selected solution become the global optimal solution by optimizing the Akaikes information criterion expressing the quality of the inference rules. The trajectory tracking simulation and experiment of the polishing robot show that the optimal fuzzy inference rules are automatically selected by the genetic algorithm and the proposed fuzzy-sliding mode controller provides reliable tracking performance during the polishing process.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.3
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• pp.313-318
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• 2013

Magnetic abrasive polishing is an advanced deburring process for nonmagnetic materials and micropattern products that have non-machinability characteristics. Despite these advantages, there are some problems with using MAP for deburring. MAP has introduced geometric errors into microgrooves because of an over-cutting force caused by uncontrolled magnetic abrasives in the MAP tool. Thus, in this study, to solve this problem, an EP (electrolyte polishing)-MAP hybrid polishing process was developed for deburring microgrooves in an STS316 material. In addition, an evaluation of EP-MAP for the deburring of microgrooves was carried out by profiling the burrs. The results of the experiment showed geometric errors after the deburring process using MAP. However, in the case of EP-MAP, no geometric error was observed after the process because of the lower material removal rate in EP-MAP.

• Journal of the Korean Society for Precision Engineering
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• v.16 no.3 s.96
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• pp.9-17
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• 1999

This paper presents a method of grinding and polishing automation of precision die after CNC machining. The method employs a robot system equipped with a pneumatic spindle and a special abrasive film pad. The robot program is automatically generated off-line program form a PC and downloaded to robot controller. Position and orientation data for the program is supplied form cutter contact (CC) data of NC machining process. This eliminates separate robot teaching process. This paper aims at practical automation of die finishing process which is very time consuming and suffering from shortage of workpeople. Time loss due to changeover from one product to another is eliminated by PC off-line programming exploiting appropriate NC machining data. Dextrous 6-axis robot with rigid wrist and simple tooling enables the process applicable to larger, rather complex 3 dimensional free surfaces.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.3
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• pp.319-324
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• 2013

In this study, an EP (electro-polishing)-MAP (magnetic abrasive polishing) hybrid process was developed as a precision finishing process. To evaluate the characteristics of this EP-MAP hybrid process, a series of experiments were carried out using various working gaps, current densities, and electrolyte concentrations. As a result, $NaNO_3$ was found to be very suitable as the electrolyte of the hybrid process because there was no electrochemical reaction with the CNT-Co composite. Moreover, an increase in the magnetic flux density affected the liquidity of the electrolyte and prevented it from flowing into the CNT-Co composite powder. For that reason, the lower liquidity of the electrolyte increased the thermal energy on the surface of the workpiece.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.122-129
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• 2005

Shoe with leather upper such as safety and golf shoe requires a roughing process where the upper is roughed fur helping outsole to be cemented well. It is an important and basic process for production of leather shoe but is not automated yet. Thus, there are problems that the defect rate is high and the quality of roughed surface is not uniform. In order to solve such problems, the interest in automation of roughing process is being increased and this paper introduces CAM system for 5-axis automatic roughing machine as one part of automation of roughing process. The CAM system developed interpolates a B-spline curve using points measured from the Roughing Path Measurement System. The B-spline curve is used to generate the tool path and orientation data fer a roughing tool which has not only stiffness but also flexibility to rough the inclined surface efficiently. For productivity, the upper of shoe is machined by side of the roughing tool and tool offset is applied to the roughing tool for machining of inclined surface. The generated NC code was applied to 5-axis polishing machine for the test. The upper of shoe was roughed well along the roughing path data from CAM and the roughed surface was proper fur cementing of the outsole.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator. removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistancy. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfact Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.176-180
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• 2001

There are several factors causing re-work in CMP process such as improper polish time calculation by operator, removal rate decline of the polisher, unstable in-suit pad conditioning, slurry supply module problem and wafer carrier rotation inconsistency. And conclusively those fundimental reason for the re-work rate increasement is mainly from the cycle time delay between wafer polish and post measurement. Therefore, Wafer thickness measurement in wet condition could be able to remove those improper process conditions which may happen during the process in comparison with the conventional dried wafer measurement system and it can be able to reduce the CMP process cycle time. CMP scrap reduction by overpolish, re-work rate reduction, thickness control efficiency also can be easily achieved. CMP Equipment manufacturer also trying to develop integrated system which has multi-head & platen, cleaner, pre & post thickness measure and even control the polish time from the calculated removal rate of each polishing head by software. CMP re-work problem such as over & under polish by target thickness may result in the cycle time delay. By reducing those inefficient factors during the process and establish of the automatic process control, CLC system need to be adopted to maximize the process performance. Wafer to Wafer Polish Time Feed Back Control by measuring the wafer right after the polish shorten the polish time calculation for the next wafer and it lead to the perfect Post CMP target thickness control capability. By Monitoring all of the processed the wafer, CMP process will also be stabilize itself.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.39-45
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• 2012

Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.