• Journal of Surface Science and Engineering
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• v.53 no.6
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• pp.330-342
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• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.46-52
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• 1998

In this study, polarization switching characteristics of Pb(ZrxTil-x)O3 (PZT) thin films were investigated. Switching times(ts) were found to be decreased as the Zr mol% was increased. But, the switching peak currents(Imax) showed the largest value at 50 mol% Zr. As a result of this experiment, ts was found to be depended on the remanent polarization and coercive field and also Imax strongly depended on the dielectric constant of PZT thin films. In order to investigate the partial switching kinetics of PZT thin films, short and relatively small voltage pulses were applied to the MFM(metalferroelectric metal) PZT capacitors and polarization switching curves were measured with a variation of the total width of the applied pulses. Also, the switching curves were measured at different applied voltages(4, 8, 10, 12 and 14 volts). As the applied voltages increased, ts and Imax were found to be decreased and increased, respectively. In case of fatigued specimen which we applied $\pm$10 volts square pulse for 1010 cycles, ts and Imax were found to be shorter and smaller than those of virgin specimens. This is due to the decrease of the remanent polarization and the increase of the coercive field.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.891-896
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• 1998

The relaxation and elimination characteristics of polarization-photoinduced dichroism have been investigated in amorphous chalcogenide thin films deposited having normal(0。) and obique (80。) vapor incident angles. The dark relaxation kinetics of dichroism from a saturation point(D\ulcorner\ulcorner) to a certain relaxation point(D\ulcorner\ulcorner) grew to be longer on subsequent cycles of switching on and off of the inducing light, and these decays are changed from simple exponential decay to stretched exponential decay. The dichroism induced by a long time(~3.3 hrs) exposure exhibited the characteristics of longer time maintenance and smaller decreasing rate, in contrast with that by a short time (~min) exposure. In addition, the dichroism was eliminated by the exposure of non-polarized He-Ne laser.