• 전기전자학회논문지
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• 제13권3호
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• pp.72-79
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• 2009

본 논문에서는 이중 원형 편파 특성을 갖는 소형 마이크로스트립 능동 안테나에 대해 기술하였다. 제안된 안테나는 좌수원형편파와 우수원형편파를 선택하여 수신할 수 있는 다이버시티 기능을 갖는다. 방사체용 마이크로 스트립 패치의 내부에 정사각형 빈 공간을 두어 소형화를 시켰으며 급전선로 주변에 슬롯을 위치시켜 임피던스 정합이 용이하게 하였다. 정사각형 빈 공간에는 스위치와 증폭기 회로들이 설계되었으며 이를 통해 편파 모드 선택과 안테나 이득을 증가시켰다. 제안된 안테나는 GPS 에 적용하였으며 임피던스 대역폭을 만족한다. 제작된 안테나는 우수원형편파 동작 시, 3dB 축비 대역폭은 약 50MHz, 3dB 빔 각도는 90도, 13dBi 의 안테나 이득이 측정되었다. 또한 좌수원형편파 동작 시, 3dB 축비 대역폭은 약 50MHz, 3dB 빔 각도는 84도, 약 12dBi 의 안테나 이득이 측정되었다.

• Journal of the Optical Society of Korea
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• 제20권6호
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• pp.716-721
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• 2016

A single-and dual-wavelength switchable polarized Yb-doped double-clad fiber laser around 1120 nm based on a pair of fiber Bragg gratings (FBGs) is demonstrated. The polarization-maintaining (PM) linear cavity is composed of a double clad PM Yb-doped fiber (YDF) and a pair of PM FBGs. The laser can operate in stable dual-wavelength or wavelength-switching modes due to the polarization hole burning (PHB) and the spatial hole burning (SHB) enhanced by the PM linear cavity. In dual-wavelength operation, the two orthogonally polarized wavelengths are centered at 1118.912 nm and 1119.152 nm, with an interval of 0.24 nm and a signal to noise ratio (SNR) of 35 dB. The maximum output power is 14.67 W when the launched LD pump is 24 W corresponding to an optical efficiency of 61.1%. The lasing lines switchover may be realized by adjusting the polarization controller (PC) fitted in the cavity. The two single-wavelengths are 1118.912 nm and 1119.152 nm. When the injected LD pump is 24 W, the highest output powers are 7.68 W and 8.64 W corresponding to optical efficiencies of 32% and 36% respectively. The spectral linewidth of the lasing lines are 0.075 nm and 0.07 nm, and the average numerical values of PER aredB and 19.9 dB, respectively.

• 한국응용과학기술학회지
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• 제35권4호
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• pp.1206-1212
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• 2018

본 연구에서는 강유전성 고분자를 이용하여 제작된 100 nm 이하 두께를 가지는 박막형 커페시터의 측정 주파수에 따른 분극 반전 특성을 측정, 분석하였다. 고정된 박막 두께에 대해, 인가되는 최고 전기장의 세기가 증가할수록 더 높은 항전계에서 분극 반전이 발생되었다. 고정된 최고 전기장에 대해, 박막의 두께에 무관하게 같은 항전계에서 분극 반전이 발생되었다. 모든 측정에서 로그스케일 전기장 및 로그스케일 주파수의 관계에서 약 $0.12{\pm}0.01$의 비례 상수를 보였다. 결과적으로, 강유전체 고분자 커페시터가 40 nm 두께까지는 size effect 없이 일정한 분극 반전 특성을 보였다. 본 연구는 저전압 동작 고분자 메모리 소자의 동작 예측에 유용할 것이므로 저전압에서 동작 가능한 고분자 메모리 소자의 가능성을 보여준다.

• 한국세라믹학회지
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• 제43권11호
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• pp.688-692
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• 2006

Ferroelectric lanthanides-substituted $Bi_4Ti_3O_{12}$ $(Bi_{4-x}Ln_xTi_3O_{12}, BLnT)$ thin films approximately 200 nm in thickness were deposited by metal organic chemical vapor deposition onto Pt(111)/Ti/SiO$_2$/Si(100) substrates. Many researchers reported that the lanthanides substitution for Bi in the pseudo-perovskite layer caused the distortion of TiO$_6$ octahedron in the a-b plane accompanied with a shift of the octahedron along the a-axis. In this study, the effect of lanthanides (Ln=Pr, Eu, Gd, Dy)-substitution and crystallization temperature on their ferroelectric properties of bismuth titanate $(Bi_4Ti_3O_{12}, BIT)$ thin films were investigated. As BLnT thin films were substituted to lanthanide elements (Pr, Eu, Gd, Dy) with a smaller ionic radius, the remnant polarization (2P$_r$) values had a tendency to increase and made an exception of the Eu-substituted case because $Bi_{4-x}Eu_xTi_3O_{12}$ (BET) thin films had the smaller grain sizes than the others. In this study, we confirmed that better ferroelectric properties can be expected for films composed of larger grains in bismuth layered peroskite materials. The crystallinity of the thin films was improved and the average grain size increased as the crystallization temperature,increased from 600 to 720$^{\circ}C$. Moreover, the BLnT thin film capacitor is characterized by well-saturated polarization-electric field (P-E) curves with an increase in annealing temperature. The BLnT thin films exhibited no significant degradation of switching charge for at least up to $1.0\times10^{11}$ switching cycles at a frequency of 1 MHz. From these results, we can suggest that the BLnT thin films are the suitable dielectric materials for ferroelectric random access memory applications.

• 한국전자파학회논문지
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• 제21권7호
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• pp.769-777
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• 2010

본 논문에서는 모서리 접지면 슬롯과 PIN 다이오드를 이용하여 2.4 GHz에서 활용 가능한 편파 변환 특성의 마이크로스트립 패치 안테나를 제안하였다. 제안된 안테나는 정사각형 구조의 마이크로스트립 패치와 접지면에 위치한 두 쌍의 슬롯과 PIN 다이오드로 이루어져 있다. 제안된 안테나에서는 PIN 다이오드의 스위칭 특성을 이용하여 접지면 슬롯의 전기적 길이를 조정하였고, 이를 통해 선형 편파와 좌회전 편파, 우회전 편파 간의 변환 을 구현하였다. 또한 DC 바이어스 회로로 인한 접지면의 분리를 통해서 안테나는 크기 감소 효과를 얻었다. 안테나의 설계 주파수는 2.4 GHz이며, 선형 편파로 동작할 때에는 15 dB의 반사 손실과 59 MHz의 임피던스 대역폭을 가지고, 좌회전 원형 편파와 우회전 원형 편파시 각각 1.17 dB, 1.67 dB의 최소 축비 특성과 28 MHz, 32 MHz의 3-dB 축비 대역폭을 가진다.

• 한국재료학회지
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• 제12권11호
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• pp.835-839
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• 2002

Metal-Ferroelectric-Metal(MFM) capacitors were prepared using $Bi_{3.3}$ $La_{0.7}$ $Ti_3$$O_{12}$ (BLT) ferroelectric thin films which were spin coated on $Pt/Ti/SiO_2$/Si substrates by the Sol-Gel method. BLT thin films annealed at above $650^{\circ}C$ showed polycrystalline structures with typical c-axis preferred orientation. The grain size and surface roughness were increased as the annealing temperature increased from $650^{\circ}C$ to $700^{\circ}C$. In addition, the full width at half maximum (FWHM) values were decreased with increasing annealing temperatures, indicating the improvement of crystallinity. The remanent polarization (2Pr= $Pr^{+}$ $+Pr^{-) }$ and leakage current of the BLT film annealed at $650^{\circ}C$ were about 29.3 $\mu$C/cm$^2$ and $2.3$\times$10^{-8}$$ A/cm^2$ at 3V. There were no distinct changes in the retention charges after $10^{10}$ polarization switching cycles, showing good fatigue property of the annealed BLT films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권7호
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• pp.514-520
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• 1999

Ferroelectric PZT(30/70)/PZT(70/30) heterolayered thin films were fabricated by spin-coating method on the $Pt/Ti/SiO_2Si$ substrate alternately using(30/70) and PZT(70/30) alkoxide solutions prepared by sol-coating method. The coating and heating procedure was repeated six times to form PZT heterolayered films, and thickness of the film obtained by one-times drying/sintering process was about 40-50 nm. All PZT heterolayered films, showed dense and homogeneous structure without the presence of rosette sturctrue. The relative dielectric constant, remanent polarization and leakage current density of PZT heterolayered films were superior to those of single composition PZT(30/70) and PZT(70/30) films, and those values for the PZT-6 film were 975, $21 \muC/cm^2\; and\; 8\times10^{-9}\; A/cm^2$, respectively. And the PZT-6 heterolayered film showed fairly good fatigue characteristics of remanent polarization and coercive field after application of $10^8$ switching cycles.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.58-61
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• 2001

Metal-insulator-semiconductor (MIS) C-V properties with high dielectric AIN thin films showed no hysteresis and good interface properties. The dielectric constant of the AIN film calculated from the capacitance at the accumulation region in the capacitance-voltage(C-V) characteristics was about 8. The C-V characteristics of MFIS capacitor showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin films. Typical dielectric constant value of LiNbO$_3$ film of MFIS device was about 23. The memory window width was about 1.2V at the gate voltage of $\pm$5 V ranges. Typical gate leakage current density of the MFIS structure was the order of 10$^{-9}$ A/cm$^2$ at the range of within $\pm$500 kV/cm. The ferroelectric capacitors showed no polarization degradation up to about 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulse(peak-to-peak 8V, 50% duty cycle) in the 500kHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.668-671
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• 2001

The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.