• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.264-267
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• 2004

[ $Bi_{3.25}La_{0.75}Ti_3O_{12}$ ] (BLT) thin films were prepared by using metal organic decomposition method onto the $LaNiO_3$ (LNO) bottom electrode. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures ranging from 450 to $650^{\circ}C$, the BLT thinfilms were successfully deposited on LNO bottom electrode and exhibited (117) orientation. The BLT thin films annealed as low as $600^{\circ}C$ showed excellent ferroelectricity, higher remanent polarization and no significant degradation of switching charge at least up to $5{\times}10^9$ switching cycles at a frequency of 100 kHz and 5 V. For the annealing temperature of $600^{\circ}C$, the remanent polarization Pr and coercive field were $23.5\;C/cm^2$ and 120 kV/cm, respectively.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.235-242
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• 2017

Changes in polarization and thermal expansion coefficients during temperature increase of a poled lead zirconate titanate (PZT) cube specimen switched by an electric field at room temperature are measured. The measured data are analyzed to construct governing differential equations for polarization and strain changes. By solving the differential equations, an experimental formula for the high temperature behavior of ferroelectric materials is obtained. It is found that the predictions by the formula are in good agreement with measures. From the viewpoint of macroscopic remnant state variables, it appears that the processes of electric field-induced switching at different temperatures are identical and independent of temperature between $20^{\circ}C$ and $110^{\circ}C$.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.132-137
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• 1996

Pb(Zr$_{x}$Ti$_{1-x}$ )O$_{3}$ solutions prepared by sol-gel processing with different Zr/Ti ratio were coated on Pt/SiO$_{2}$/Si substrates using spin coating method. Coated films were annealed by rapid thermal annealing at 650.deg. C for 20sec to fabricate Pb(Zr, Ti)O$_{3}$ ferroelectric thin films. Electrical properties of the films such as dielectric constant and loss, ferroelectric hysteresis, fatigue, switching time, and leakage current were measured. Hysteresis of the films with different Zr/Ti ratio yield Pr ranging 10-21.mu.C/cm$^{2}$, E$_{c}$ ranging 37.5-137.5kV/cm. Hysteresis curve was changed from square-type to slim type according to increasing Zr contents. Switching time was faster than 180ns, and leakage current was about 20.mu.A/cm$^{2}$. The film underwent above 10$^{8}$ cycles of reversed polarization showed fatigue with increased coercive field and decreased remnant polarization.tion.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.6
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• pp.1175-1177
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• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Journal of the Korean Ceramic Society
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• v.37 no.1
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• pp.12-20
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• 2000

Dielectric property of Ba-modified 0.65Pb(Mg1/3Nb2/3)O3-0.35PbTiO3 ceramics having compositions near the morphotropic phase boundary was investigated. For the specimens having Ba contents between 0 and 20 at%, the average transition temperature was decreased linearly with increasing Ba contents and the degree of hysteresis was also decreased with increasing Ba contents. The maximum dielectric constants (K), electric field induced polarization(P) and electrically-induced strain(S) were found to exihibit a maximum value at∼3 at% of Ba. The increase of S and the decrease of hysteresis by minor additions of Ba impurities indicated the development of new higher perfomance actuator materials. The composition of Ba-PMN-PT (10/65/35) may be appropriate for capacitor materials because of low hysteresis and high polarization.

• Proceedings of the Optical Society of Korea Conference
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• 2004.02a
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• pp.92-93
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• 2004

• The Journal of Natural Sciences
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• v.18 no.1
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• pp.9-16
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• 2007

The electro-optic Q-switching device for medical high power laser depends on the relation between the population inversion and the Q-switching time. The polarization changes in applied voltage must be experimented to use each $LiNbO_3$ crystal for Q-switching in high power laser.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.12
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• pp.10-15
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• 2013

In this paper, we propose a Lyot-type optical fiber comb filter based on a polarization-diversity loop structure (PDLS), which has flat-top pass bands and multiwavelength switching capability. Generally, the PDLS can remove the dependency of the filter on input polarization. The proposed filter is composed of a polarization beam splitter, two half-wave plates (HWPs), and two polarization-maintaining fiber loops concatenated with a $60^{\circ}$ offset between their principal axes. By controlling two HWPs, it can operate in a flat-top band mode or a lossy flat-top band mode with an inherent insertion loss of ~3.49dB. In particular, flat-top bands can be interleaved in both modes, which cannot be realized in a Lyot-Sagnac comb filter based on a fiber coupler. Compared with Solc-type high-order comb filters with the same order, the proposed filter shows sharper transition between pass and stop bands.

• Journal of the Korean Ceramic Society
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• v.36 no.10
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• pp.1035-1039
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• 1999

Ferroelectric properties and reliability characteristics of(111) and (100) preferentially oriented tetragonal Pb(Zr0.2Ti0.8)O3 (PZT) thin film capacitors have been investigated as a function of the top electrode thickness. The (111) preferentially oriented film exhibits 180$^{\circ}$domain switching process with better squareness of hysterisis loop and abrupt change of small singal capacitance-voltage comparing to the (100) preferentially oriented film having 90$^{\circ}$ domain switching process. The domain swithcing process of tetragonal phase PZT is different from that of rhobohedral phase. The film with thinner top electrode shows less initial switching polarization due to less compressive stress but it exhibits better endurance characteristics due to enhancing partial switching region.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1121-1124
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• 2003

For high quality displays, analog responding liquid crystals with spontaneous polarization ($P_{s}$) need to be coupled with active matrix driving schemes. We have characterized the half-V-shaped switching ferroelectric liquid crystal mode (half-V FLC mode) in terms of dielectiric and voltage holding properties. Research on these switching properties provided us with the technology for switching half-V FLC mode FLCs by using amorphous silicon TFTs.