• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.4
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• pp.217-222
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• 2003

A new two-dimensional analytical model for the potential distribution and drain-induced barrier lowering (DIBL) effect of fully depleted short-channel Silicon-on-insulator (SOI)-MESFET's has been presented in this paper. The two dimensional potential distribution functions in the active layer of the device is approximated as a simple parabolic function and the two-dimensional Poisson's equation has been solved with suitable boundary conditions to obtain the bottom potential at the Si/oxide layer interface. It is observed that for the SOI-MESFET's, as the gate-length is decreased below a certain limit, the bottom potential is increased and thus the channel barrier between the drain and source is reduced. The similar effect may also be observed by increasing the drain-source voltage if the device is operated in the near threshold or sub-threshold region. This is an electrostatic effect known as the drain-induced barrier lowering (DIBL) in the short-gate SOI-MESFET's. The model has been verified by comparing the results with that of the simulated one obtained by solving the 2-D Poisson's equation numerically by using the pde toolbox of the widely used software MATLAB.

• Korea-Australia Rheology Journal
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• v.15 no.2
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• pp.83-90
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• 2003

In cases of the microfluidic channel, the electrokinetic influence on the transport behavior can be found. The externally applied body force originated from the electrostatic interaction between the nonlinear Poisson-Boltzmann field and the flow-induced electrical field is applied in the equation of motion. The electrostatic potential profile is computed a priori by applying the finite difference scheme, and an analytical solution to the Navier-Stokes equation of motion for slit-like microchannel is obtained via the Green's function. An explicit analytical expression for the induced electrokinetic potential is derived as functions of relevant physicochemical parameters. The effects of the electric double layer, the zeta potential of the solid surface, and the charge condition of the channel wall on the velocity profile as well as the electroviscous behavior are examined. With increases in either electric double layer or zeta potential, the average fluid velocity in the channel of same charge is entirely reduced, whereas the electroviscous effect becomes stronger. We observed an opposite behavior in the channel of opposite charge, where the attractive electrostatic interactions are presented.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.2
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• pp.260-264
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• 1987

We examine the effect of junction depth on the charge density solving numerically the general form of Poisson's equation for Gaussian $n^{+}$-p junctions. We also present an analytical model for the charge diopole due to the variation of the dielectric constant with doping.

• Journal of the Korean Data and Information Science Society
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• v.19 no.4
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• pp.1419-1427
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• 2008

This paper shows the kernel Poisson regression which can be applied in the claims reserving, where the row effect is assumed to be a nonlinear function of the row index. The paper concentrates on the chain-ladder technique, within the framework of the chain-ladder linear model. It is shown that the proposed method can provide better reserve estimates than the Poisson model. The cross validation function is introduced to choose optimal hyper-parameters in the procedure. Experimental results are then presented which indicate the performance of the proposed model.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.11
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• pp.1290-1298
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• 1992

In this paper, the Poisson's equation is solved two-dimensionally without employing any fitting parameters, and the model formulation of a short-channel MOSFET is accomplished fully analytically. It automatically derives a very accurate drain current expression that can be used simultaneously for strong inversion, subthreshold, and saturation regions. Furthermore, this model gives a unified explanation for the short-channel effect, the body effect, the DIBL effect, and even the variation of the effective carrier mobility. The obtained expression of the threshold voltage also includes the dependence on the oxide thickness, the n+ junction depth, and temperature.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.247-253
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• 2014

In this paper, a new two dimensional (2D) analytical modeling and simulation for a Dual Material Double Gate tunnel field effect transistor (DMDG TFET) is proposed. The Parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions and analytical expressions for surface potential and electric field are derived. This electric field distribution is further used to calculate the tunnelling generation rate and thus we numerically extract the tunnelling current. The results show a significant improvement in on-current characteristics while short channel effects are greatly reduced. Effectiveness of the proposed model has been confirmed by comparing the analytical results with the TCAD simulation results.

• Structural Engineering and Mechanics
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• v.76 no.6
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• pp.765-779
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• 2020

This article presents a nonclassical size dependent model based on the modified couple stress theory to study and analyze the bending behavior of perforated microbeams under different loading patterns. Modified equivalent material and geometrical parameters for perforated beam are presented. The modified couple stress theory with one material length scale parameter is adopted to incorporate the microstructure effect into the governing equations of perforated beam structure. The governing equilibrium equations of the perforated Timoshenko as well as the perforated Euler Bernoulli are developed based on the potential energy minimization principle. The Poisson's effect is included in the governing equilibrium equations. Regular square perforation configuration is considered. Based on Fourier series expansion, closed forms for the bending deflection and the rotational displacements are obtained for simply supported perforated microbeams. The proposed methodology is validated and compared with the available results in the literature and an excellent agreement is detected. Numerical results demonstrated the applicability of the proposed methodology to investigate the bending behavior of regularly squared perforated beams incorporating microstructure effect under different excitation patterns. The obtained results are significantly important for the design and production of perforated microbeam structures.

• Journal of the Korean Wood Science and Technology
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• v.41 no.5
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• pp.425-431
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• 2013

Estimation equations of shear modulus in the plane of laminated veneer lumber (LVL) were compared each other through uniaxial tension test results. The equations - basic elastic equation in the dimensional orthotropic case, Hankinson's formula and empirical equation proposed by Salikis and Falk, were applied to determine the elastic constants at various angles to the grain, which were needed for determination of shear modulus. Tensile elastic modulus of LVL predicted from these equations were compared with test data to evaluate the accuracy of the equation. Tensile elastic modulus rapidly decreased at orientations between 0 and 15 degrees and elastic modulus at grain angles of 15, 30, and 45 degrees overestimated in the presented equations. But the proposed equation by Salikis and Falk showed better prediction, especially at 30, and 45 degrees. This proposed formula would be more useful and practical for estimating of shear modulus of wood composites like LVL to minimize the effect of Poisson's ratio term.

• Advances in nano research
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• v.10 no.5
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• pp.423-435
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• 2021

This paper examines the thermal post-buckling behaviors of graphene-reinforced metal matrix composite (GRMMC) laminated cylindrical panels which possess in-plane negative Poisson's ratio (NPR) and rest on an elastic foundation. A panel consists of GRMMC layers of piece-wise varying graphene volume fractions to obtain functionally graded (FG) patterns. Based on the MD simulation results, the GRMMCs exhibit in-plane NPR as well as temperature-dependent material properties. The governing equations for the thermal post-buckling of panels are based on the Reddy's third order shear deformation shell theory. The von Karman nonlinear strain-displacement relationship and the elastic foundation are also included. The nonlinear partial differential equations for GRMMC laminated cylindrical panels are solved by means of a singular perturbation technique in associate with a two-step perturbation approach and in the solution process the boundary layer effect is considered. The results of numerical investigations reveal that the thermal post-buckling strength for (0/90)_5T GRMMC laminated cylindrical panels can be enhanced with an FG-X pattern. The thermal post-buckling load-deflection curve of 6-layer (0/90/0)_S and (0/90)_3T panels of FG-X pattern are higher than those of 10-layer (0/90/0/90/0)_S and (0/90)_5T panels of FG-X pattern.