• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.247-247
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• 2011

플라즈마 분자선 에피택시(plasma-assisted molecular beam epitaxy)법을 이용하여 다공질 실리콘(porous silicon)에 ZnO 박막을 성장하였다. 성장 후, 아르곤 분위기에서 10분 간 다양한 온도(500~700$^{\circ}C$)로 열처리하였다. 다공질 실리콘 및 열처리 온도가 ZnO 박막의 특성에 미치는 영향을 scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence (PL)을 이용하여 분석하였다. 실리콘 기판에 성장된 ZnO 박막은 일반적은 섬구조(island structure)로 성장된 반면, 다공질 실리콘에 성장된 ZnO 박막은 산맥과 같은 구조(mountain range-like structure)로 성장되었다. 열처리 온도가 증가함에 따라 ZnO 박막의 grain size는 증가하였다. 실리콘 기판 위에 성장된 ZnO 박막은 wurtzite 구조를 나타내는 여러 개의 회절 피크가 관찰된 반면, 다공질 실리콘에 성장된 ZnO 박막은 c-축 배향성(c-axis preferred orientation)을 나타내는 ZnO (002) 회절 피크만이 나타났다. 다공질 실리콘에 성장된 ZnO 박막의 구조적 및 광학적 특성이 실리콘 기판에 성장된 ZnO 박막의 특성보다 우수하게 나타났다. 뿐만 아니라, 열처리 온도가 증가함에 따라 다공질 실리콘에 성장된 ZnO 박막의 PL 강도비(intensity ratio)가 실리콘 기판에 성장된 ZnO 박막의 강도비보다 월등하게 증가하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• Mass Spectrometry Letters
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• v.9 no.4
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• pp.105-109
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• 2018

A certified reference material (CRM) for the analysis of inorganic nutrients in nutritional supplements has been developed. Accurate mass fractions of chromium (Cr), iron (Fe), copper (Cu), and zinc (Zn) were determined by isotope dilution inductively coupled plasma mass spectrometry (ID ICP/MS). The measurement results were used to assign certified values for the CRM, which were metrologically traceable to the definitions of the measurement units in the International System of Units (SI). Production of a candidate reference material (RM) and the certification processes are summarized. Each nutrient in the CRM showed good homogeneity, which was estimated using relative standard deviations of the measurement results of twelve bottles in a batch. This CRM is expected to be an important reference to improve reliability and comparability of nutrient analyses in nutritional supplements and related samples in analytical laboratories.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.19 no.3
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• pp.44-50
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• 2005

This paper deals with the characteristics and reduction methods of the plasma luminosity caused between the ZnO surge arrester block and metal electrodes. In this study, the impulse current generator that can generate $8/20[{\mu}s]$ impulse currents with a peak short-circuit of 10[kA] is designed and fabricated. Plasma luminosity phenomena for fine and used ZnO blocks were observed as a function of the contact states between the ZnO block and electrodes and the polarity of applied impulse voltages. As a result, discharge luminous events are produced near the contact edges between the ZnO block and metal electrodes. The discharge plasma luminosity between the ZnO surge arrester block and low potential electrode is more intensive than that between the ZnO surge arrester block and high potential electrode. Surface flashover of ZnO blocks are mainly caused by plasma generation near the edge of metal electrode. Also, plasma luminosity for the fine ZnO blocks is less than that for the used ZnO blocks. Plasma luminosity at the contact of the ZnO block and ring-type electrode is more intensive than that at the contact of ZnO block and disk electrode. It is desirable to use the disk electrode with the proper contact area to reduce the plasma luminosity caused at the contact point between the ZnO block and electrodes.

• Journal of the Korean Society of Food Science and Nutrition
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• v.38 no.4
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• pp.415-422
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• 2009

We previously demonstrated that zinc plus arachidonic acid (ZA) treatment lowered blood glucose levels in streptozotocin-induced diabetic rats, genetically diabetic obese (ob/ob) mice, and genetically diabetic, non-obese Goto-Kakizaki rats. However, plasma insulin levels did not increase with ZA treatment, suggesting that ZA lowers blood glucose levels not by stimulating pancreatic insulin secretion. However, it is unclear whether these agents lower blood glucose levels by decreasing hepatic glucose output (HGO) or by increasing glucose utilization in peripheral tissues, or both. In order to determine ZA target organ of insulin action, we divided 18 Sprague-Dawley rats weighing ${\sim}130g$ into 3 groups (6 rats per group) and treated them for four weeks with: (1) Control diet (regular rat chow), (2) High fructose (60.0%) diet only, and (3) the same fructose diet plus zinc (10 mg/L) and arachidonic acid (50 mg/L) containing drinking water. After 4 weeks, insulin action was assessed using the hyperinsulinemic euglycemic clamp technique. Food intake and body weights were comparable in all three groups of rats throughout the study period. Plasma glucose and insulin concentrations, glucose uptake, and HGO in the basal state were all the same in these three rat groups. During the clamp study, fructose-treated and fructose+ZA treated rat groups did not exhibit any detectable change on insulin-mediated glucose uptake compared to controls. High fructose feeding impaired insulin mediated suppression of HGO, compared to controls during clamp (4.39 vs. 2.35 mg/kg/min; p<0.05). However, ZA treatment in high fructose-fed rats showed a remarkable increase in hepatic insulin sensitivity compared to high fructose-fed rats, reflected by a complete recovery in suppression of HGO during the clamp (4.39 vs. 2.18 mg/kg/min; p<0.05). This data suggests that ZA increases insulin sensitivity in liver but not glucose utilization of peripheral tissues in high fructose-fed rats.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.6
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• pp.349-355
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• 2017

Zinc sulphide (ZnS) nanoparticles were fabricated by hydrothermal synthesis at $180^{\circ}C$ for 12 h. Two kinds of ZnS powder (hydrothermal synthesized ZnS and commercial ZnS) were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) for phase and microstructure, respectively. The XRD patterns showed that all ZnS nanoparticles have a sphalerite (cubic) structure. The nanoparticles of two different ZnS powders were sintered by spark plasma sintering. The sintered ZnS were analyzed by XRD, SEM, and FT-IR. We found that the transmittance of the infrared region is highly dependent on the density and crystal structure of sintered ZnS and the purity of the starting ZnS powder.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.135-136
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• 2009

The etching characteristics of Zinc Oxide (ZnO) and etch selectivity of ZnO to $SiO_2$ in $BCl_3/Ar/Cl_2$ plasma were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $BCl_3$(16 sccm)/Ar(4 sccm)/$Cl_2$(3 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray photoelectron spectroscopy (XPS). From these data, the suggestions on the ZnO etch mechanism were made.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.158-158
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• 2017

Titanium and its alloys have been used in the field dental and orthopedic implants because of their excellent mechanical properties and biocompatibility. Despite these attractive properties, their passive films were somewhat bioinert in nature so that sufficient adhesion of bone cells to implant surface was delayed after surgical treatment. Recently, plasma electrolyte oxidation (PEO) of titanium metal has attracted a great deal of attention is a comparatively convenient and effective technique and good adhesion to substrates and it enhances wear and corrosion resistances and produces thick, hard, and strong oxide coatings. Silicon(Si), Zinc(Zn), and Manganese(Mn) have a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. And, Zn has been shown to be responsible for variations in body weight, bone length and bone biomechanical properties. Also, Mn influences regulation of bone remodeling because its low content in body is connected with the rise of the concentration of calcium, phosphates and phosphatase out of cells. The objective of this work was research on bone-like apatite morphology on Si-Zn-Mn-hydroxyapatite coating on Ti-6Al-4V alloy by plasma electrolytic oxidation. Anodized alloys were prepared at 280V voltage in the solution containing Si, Zn, and Mn ions. The surface characteristics of PEO treated Ti-6Al-4V alloy were investigated using XRD, FE-SEM, and EDS.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.120-120
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• 2016

Ti-6Al-4V alloy have been used for dental implant because of its excellent biocompatibility, corrosion resistance, and mechanical properties. However, the integration of such implant in bone was not in good condition to achieve improved osseointergraiton. For solving this problem, calcium phosphate (CaP) has been applied as coating materials on Ti alloy implants for hard tissue applications because its chemical similarity to the inorganic component of human bone, capability of conducting bone formation and strong affinity to the surrounding bone tissue. Various metallic elements, such as strontium (Sr), magnesium (Mg), zinc (Zn), sodium (Na), silicon (Si), silver (Ag), and yttrium (Y) are known to play an important role in the bone formation and also affect bone mineral characteristics, such as crystallinity, degradation behavior, and mechanical properties. Especially, Zn is essential for the growth of the human and Zn coating has a major impact on the improvement of corrosion resistance. Plasma electrolytic oxidation (PEO) is a promising technology to produce porous and firmly adherent inorganic Zn containing $TiO_2(Zn-TiO_2)$coatings on Ti surface, and the a mount of Zn introduced in to the coatings can be optimized by altering the electrolyte composition. In this study, corrosion behavior of Ti-6Al-4V alloy after plasma electrolytic oxidation in solutions containing Ca, P and Zn were studied by scanning electron microscopy (SEM), AC impedance, and potentiodynamic polarization test. A series of $Zn-TiO_2$ coatings are produced on Ti dental implant using PEO, with the substitution degree, respectively, at 0, 5, 10 and 20%. The potentiodynamic polarization and AC impedance tests for corrosion behaviors were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to +2000mV. Also, AC impedance was performed at frequencies ranging from 10MHz to 100kHz for corrosion resistance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.