• 제목/요약/키워드: plasma sheet

검색결과 170건 처리시간 0.03초

이온빔 처리를 통한 은나노와이어 전극의 전기적 특성과 안정성 향상 (Improvement of Electrical Property and Stability of Silver Nanowire Transparent Electrode Via Ion-beam Treatment)

  • 정성훈;이승훈;김도근
    • 한국표면공학회지
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    • 제50권6호
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    • pp.455-459
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    • 2017
  • The development of flexible transparent electrode has been paid attention for flexible electronics. In this study, we have developed transparent electrode based on silver nanowires with improved electrical property and stability through ion-beam treatment. The energetic particles of ion-beam could sinter junctions of each silver nanowires and etch out polyvinylpyrollidone(PVP) coated on silver nanowires. The sheet resistance of silver nanowire transparent electrode was reduced by 74%, and the resistance uniformity was increased about 3 times after exposure of ion beam. Moreover, the stability at $85^{\circ}C$ of temperature and 85% of relative humidity could be also improved.

Si 웨이퍼/솔더/유리기판의 무플럭스 접합에 관한 연구 (A Study on the Fluxless Bonding of Si-wafer/Solder/Glass Substrate)

  • 박창배;홍순민;정재필;;강춘식;윤승욱
    • Journal of Welding and Joining
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    • 제19권3호
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    • pp.305-310
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    • 2001
  • UBM-coated Si-wafer was fluxlessly soldered with glass substrate in $N_2$ atmosphere using plasma cleaning method. The bulk Sn-37wt.%Pb solder was rolled to the sheet of $100\mu\textrm{m}$ thickness in order to bond a solder disk by fluxless 1st reflow process. The oxide layer on the solder surface was analysed by AES(Auger Electron Spectroscopy). Through rolling, the oxide layer on the solder surface became thin, and it was possible to bond a solder disk on the Si-wafer with fluxless process in $N_2$ gas. The Si-wafer with a solder disk was plasma-cleaned in order to remove oxide layer formed during 1st reflow and soldered to glass by 2nd reflow process without flux in $N_2$ atmosphere. The thickness of oxide layer decreased with increasing plasma power and cleaning time. The optimum plasma cleaning condition for soldering was 500W 12min. The joint was sound and the thicknesses of intermetallic compounds were less than $1\mu\textrm{m}$.

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Magnetic Turbulence Associated with Magnetic Dipolarizations in the Near-Tail of the Earth's Magnetosphere: Test of Anisotropy

  • Lee, Ji-Hee;Lee, Dae-Young;Park, Mi-Young;Kim, Kyung-Chan;Kim, Hyun-Sook
    • Journal of Astronomy and Space Sciences
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    • 제28권2호
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    • pp.117-122
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    • 2011
  • In this paper, the anisotropic nature of the magnetic turbulence associated with magnetic dipolarizations in the Earth's plasma sheet is examined. Specifically, we determine the power spectral indices for the perpendicular and parallel components of the fluctuating magnetic field with respect to the background magnetic field, and compare them in order to identify possible anisotropic features. For this study, we identify a total of 47 dipolarization events in February 2008 using the magnetic field data observed by the THEMIS A, D and E satellites when they are situated near the neutral sheet in the near-Earth tail. For the identified events, we estimate the spectral indices for the frequency range from 1.3 mHz to 42 mHz. The results show that the degree of anisotropy, as defined by the ratio of the spectral index of the perpendicular components to that of the parallel component, can range from ~0.2 to ~2.6, and there are more events associated with the ratio greater than unity (i.e., the perpendicular index being greater than the parallel index) than those which are anisotropic in the opposite sense. This implies that the dipolarization-associated turbulence of the magnetic field is often anisotropic, to some non-negligible degree. We then discuss how this result differs from what the theory of homogeneous, anisotropic, magnetohydrodynamic turbulence would predict.

Statistical properties of the fast flows accompanied by dipolarization in the near-Earth tail

  • Kim, Hyun-Sook;Lee, Dae-Young;Ahn, Byung-Ho
    • 한국우주과학회:학술대회논문집(한국우주과학회보)
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    • 한국우주과학회 2010년도 한국우주과학회보 제19권1호
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    • pp.40.4-41
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    • 2010
  • Using magnetic field and plasma moment data obtained by THEMIS satellites(A, D, and E), we selected 203 fast flow events accompanied by dipolarization in the near-Earth region( X(GSM) = -7 ~ -12 RE) and statistically examined their properties. It was found that most of the fast flows show the maximum velocity between 1 minute before dipolarization onset and 2 minutes after onset and proceed earthward and duskward. We also found that only the flows with low velocity of less than 400 km/s are observed at X > -8 RE, while the high velocity flows(as well as low velocity flows) are observed at the further tailward region(X < -8 RE). And most of the tailward flows are slow regardless of distance at X(GSM) = -7 ~ -12 RE. On the other hand, if we consider the fast flow as a bubble (Pontius and Wolf, 1990), the entropy parameter, PV5/3 is an important factor to describe the plasma sheet dynamics. Thus we investigated the relationship between the flow velocity and the amount of change in PV5/3 before and after dipolarization onset and found out that the dipolarizations with more depleted entropy parameter tend to show higher flow velocity. Also we examined how the magnetic field at geosynchronous orbit responds to the fast flow accompanied by dipolarization in the near-earth plasma sheet, using the measurements from GOES 11 and 12 statellites. We found that most of the fast flows do not reach geosynchronous orbit as suggested by Ohtani et al. (2006).

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Plasma source ion implantations for shallow $p^+$/n junction

  • Jeonghee Cho;Seuunghee Han;Lee, Yeonhee;Kim, Lk-Kyung;Kim, Gon-Ho;Kim, Young-Woo;Hyuneui Lim;Moojin Suh
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.180-180
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    • 2000
  • Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

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Characteristics of ZnO Thin Films by Means of ALD for the Application of Transparent TFT

  • ParkKo, Sang-Hee;Hwang, Chi-Sun;Kwack, Ho-Sang;Kang, Seung-Youl;Lee, Jin-Hong;Chu, Hye-Yong;Lee, Yong-Eui
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1564-1567
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    • 2005
  • Zinc oxide thin films were grown at the t emperature of $100^{\circ}C$ and $150^{\circ}C$ by means of plasma enhanced atomic layer deposition (PEALD) and conventional atomic layer deposition for applying to the transparent thin film transistor (TTFT). The growth rate of $1.9{\AA}/cycle$ with oxygen plasma is similar to that of film grown with water. While the sheet resistivity of ZnO grown with water is 1233 ohm/sq, that of film grown with oxygen plasma was too high to measure with 4 point probe and hall measurement system. The resistivity of the films grown with oxygen plasma estimated to be $10^6$ times larger than that of the films grown with water. The difference of electrical property between two films was caused by the O/Zn atomic ratio. We fabricated ZnO-TFT by means of ALD for the first time and the ZnO channel fabricated with water showed saturation mobility of $0.398cm^2/V{\cdot}s$ with bottom gate configuration.

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ZnO/$SnO_2$:F 박막의 수소플라즈마 처리에 따른 전기적.광학적 특성 변화 (Electrical and Optical Properties of ZnO/$SnO_2$:F Thin Films under the Hydrogen Plasma Exposure)

  • 강기환;송진수;윤경훈;유권종;한득영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.1147-1149
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    • 1993
  • ZnO/$SnO_2$:F bilayer films have been prepared by pyrosol deposition method to develop optimum transparent electrode for use in amorphous silicon solar cells. The solution for $SnO_2:F$ film was composed of $SnCl_4{\cdot}5H_2O,\;NH_4F,\;CH_3OH$ and HCl, and ZnO films have been deposited on the $SnO_2:F$ films by using the solution of $ZnO(CH_3COO){_2}{\cdot}2H_2O,\;H_2O\;and\;CH_3OH$. These films have been investigated the variation of electrical and optical properties under the hydrogen plasma exposure. The sheet resistance of the $SnO_2:F$ film was sharply increased and its transmittance was decreased with the blackish effect after plasma treatment. However, the ZnO/$SnO_2:F$ bilayer film was shown hydrogen plasma durability because the electrical and optical properties was almost unchanged more then 60 seconds exposure time.

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Fabrication of transparent dielectric mono layer green sheet for plasma display panel

  • Jeon, Young-Hwan;Hwang, Jong-Hee;Lee, Myung-Hyun;Hong, Kyung-Jun;Kim, Nam-Sok;Seo, Byung-Hwa;Moon, Won-Seok
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.898-901
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    • 2006
  • To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

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Photolithographic Method of Patterning Barrier Ribs for PDP by Green Sheet

  • Park, Lee-Soon;Jang, Dong-Gyu;Hur, Young-June;Lee, Sung-Ho;Kim, Duck-Gon;Kwon, Young-Hwan
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1225-1228
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    • 2005
  • Barrier ribs in the plasma display panel(PDP) function to maintain the discharge space between the glass plates as well as to prevent optical crosstalk. Patterning of barrier ribs is one of unique processes for making PDP. In this work photosensitive barrier rib pastes were prepared by incorporating binder polymer, solvent, functional monomers photoinitiator, and barrier rib powder of which surface was treated with fumed silica particles. Study on the function of materials for the barrier rib paste were undertaken. After optimization of paste formulation and photolithographic process, it was found that photolithographic patterning of barrier ribs with photosensitive barrier rib green sheet could be used in the fabrication of high resolution PDP.

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Thrust Characteristics of a Laser-Assisted Pulsed Plasma Thruster

  • Masatoshi Kawakami;Hideyuki Horisawa;Kim, Itsuro ura
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2004년도 제22회 춘계학술대회논문집
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    • pp.294-299
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    • 2004
  • An assessment of a novel laser-electric hybrid propulsion system was conducted, in which a laser-induced plasma was induced through laser beam irradiation onto a solid target and accelerated by electrical means instead of direct acceleration only by using a laser beam. A fundamental study of newly developed rectangular laser-assisted pulsed-plasma thruster (PPT) was conducted. On discharge characteristics and thrust performances with increased peak current compared to our previous study to increase effects of electromagnetic forces on plasma acceleration. Maximum peak current increased for our early study by increasing electromagnetic effects in a laser assisted PPT. At 8.65 J discharge energy, the maximum current reached about 8000 A. Plasma behaviors emitted from a thruster in various cases were observed with an ICCD camera. It was shown that the plasma behaviors were almost identical between low and high voltage cases in initial several hundred nanoseconds, however, plasma emission with longer duration was observed in higher voltage cases. Canted current sheet structures were also observed in the higher voltage cases using a larger capacitor. With a newly developed torsion-balance type thrust stand, thrust performances of laser assisted PPT could be estimated. The impulse bit and specific impulse linearly increased. On the other hand, coupling coefficient and the thrust efficiency did not increase linearly. The coupling coefficient decreased with energy showing maximum value (20.8 ?Nsec/J) at 0 J, or in a pure laser ablation cases. Thrust efficiency first decreased with energy from 0 to 1.4 J and then increased linearly with energy from 1.4 J to 8.6 J. At 8.65 J operation, impulse bit of 38.1 ?Nsec, specific impulse of 3791 sec, thrust efficiency of 8 %, and coupling coefficient of 4.3 ?Nsec/J were obtained.

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