• 한국진공학회지
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• 제19권4호
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• pp.275-280
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• 2010

MOCVD (Metal-Organic Chemical Vapor Deposition) 장비를 사용하여 BZO (boron doped zinc oxide, ZnO:B) 박막을 증착하고 수소 플라즈마 처리공정을 진행하였다. 본 연구는 수소 플라즈마 처리된 BZO 박막에 산소 플라즈마 재처리를 진행하여 BZO 박막의 특성 변화를 분석하였다. 그 결과 BZO 박막 성장은 (100), (101), (110)을 확인하였고, 산소 플라즈마 재처리에 의하여 일함수와 표면 저항이 증가하였다. 수소 플라즈마 처리만을 진행한 BZO 박막과 산소 플라즈마 재처리 공정을 진행한 BZO 박막의 300~1,100 nm에서 가중치 투과율은 86%로 변화하지 않았으며, 가중치 산란도는 12%에서 15%로 증가하였다.

• Archives of Pharmacal Research
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• 제18권4호
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• pp.231-236
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• 1995

Effects of sodium salts of various monovalent inorganic anions on transdermal permeation of salicylic acid were investigated. In in-vitro experiment using a Franz-type diffusion cell and excisicylic acid were investigated. In-vitro experiment using a Franze-type diffusion cell and excised mouse skin, the permeation-enhancing activities of the sodium salts of inoraganic anions were rougly proportional to lyotropic Hofmeister serlling abilities of the anions l F/sup -/

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.68.1-68.1
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• 2012

The best part of graphene is - charge-carriers in it are mass less particles which move in near relativistic speeds. Comparing to other materials, electrons in graphene travel much faster - at speeds of $10^8cm/s$. A graphene sheet is pure enough to ensure that electrons can travel a fair distance before colliding. Electronic devices few nanometers long that would be able to transmit charge at breath taking speeds for a fraction of power compared to present day CMOS transistors. Many researches try to check a possibility to make it a perfect replacement for silicon based devices. Graphene has shown high potential to be used as interconnects in the field of high frequency electrical devices. With all those advantages of graphene, we demonstrate characteristics of electrical and optical properties of graphene such as the effect of graphene geometry on the microwave properties using the measurements of S-parameter in range of 500 MHz - 40 GHz at room temperature condition. We confirm that impedance and resistance decrease with increasing the number of graphene layer and w/L ratio. This result shows proper geometry of graphene to be used as high frequency interconnects. This study also presents the optical properties of graphene oxide (GO), which were deposited in different substrate, or influenced by oxygen plasma, were confirmed using different characterization techniques. 4-6 layers of the polycrystalline GO layers, which were confirmed by High resolution transmission electron microscopy (HRTEM) and electron diffraction analysis, were shown short range order of crystallization by the substrate as well as interlayer effect with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups on its layers. X-ray photoelectron Spectroscopy (XPS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation, and Fourier Transform Infrared spectroscopy (FTIR) and XPS analysis shows the changes in oxygen functional groups with nature of substrate. Moreover, the photoluminescent (PL) peak emission wavelength varies with substrate and the broad energy level distribution produces excitation dependent PL emission in a broad wavelength ranging from 400 to 650 nm. The structural and optical properties of oxygen plasma treated GO films for possible optoelectronic applications were also investigated using various characterization techniques. HRTEM and electron diffraction analysis confirmed that the oxygen plasma treatment results short range order crystallization in GO films with an increase in interplanar spacing, which can be attributed to the presence of oxygen functional groups. In addition, Electron energy loss spectroscopy (EELS) and Raman spectroscopy confirms the presence of the $sp^2$ and $sp^3$ hybridization due to the disordered crystal structures of the carbon atoms results from oxidation and XPS analysis shows that epoxy pairs convert to more stable C=O and O-C=O groups with oxygen plasma treatment. The broad energy level distribution resulting from the broad size distribution of the $sp^2$ clusters produces excitation dependent PL emission in a broad wavelength range from 400 to 650 nm. Our results suggest that substrate influenced, or oxygen treatment GO has higher potential for future optoelectronic devices by its various optical properties and visible PL emission.

• 응용통계연구
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• 제27권4호
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• pp.543-552
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• 2014

최근 휴대단말기 시장에서는 블루투스, GPRS, EDGE, 3GSM, HSDPA 등과 같은 높은 대역폭의 RF를 사용하고 있다. 높은 대역폭의 RF 영역에서는 높은 면저항(Sheet resistance)을 갖는 무전도 금속박막 코팅 방법이 사용되고 있는데, 기존의 무전도 금속증착은 사출물 세정, UV 하도 코팅, 금속증착, UV 중도 코팅, 상도 코팅 등 다수의 복합 공정으로 이루어져 있다. 특히 하도공정은 금속 증착(Sputtering)과 일괄 처리가 어려워 생산성이 낮고 생산원가 상승의 원인이기도 하다. 따라서 이를 극복하기 위하여 최근 Na 등 (2014)은 무전도 금속코팅에서 Primer 대체를 위한 전자빔의 표면처리의 가능성을 가능함을 보였다. In this paper, 플라즈마 생성 전자빔 소스(Plasma generated electron beam source)를 활용하여 PC/ABS 수지 사출물의 공정을 실험계획법에 의한 전자빔 조사 조건을 탐색하여, 즉, 수지 표면처리공정 조건을 탐색하여, 그 실험 결과를 분석하여, 진공전처리공정 개발 및 양산공정라인의 처리의 최적 조건을 찾고자 한다.

• 한국전기전자재료학회논문지
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• 제25권7호
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• pp.563-568
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• 2012

Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.258-258
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• 2014

Spark discharge in water generates shockwaves which have been utilized to generate mechanical actuation for potential use in pumping application. Discharge pulses of several microseconds generate shockwaves and vapor bubbles which subsequently displace the water for a period of milliseconds. Through the use of a sealed discharge chamber and metal bellow spring, the fluid motion can be used create an oscillating linear actuator. Continuous actuation of the bellow has been demonstrated through the use of high frequency spark discharge. Discharge in water forms a region of high electric field around the electrode tip which leads to the creation of a thermal plasma channel. This process produces fast thermal expansion, vapor and bubble generation, and a subsequent shockwave in the water which creates physical displacement of the water [1]. Previous work was been conducted to utilize the shockwave effect of spark discharge in water for the inactivation of bacteria, removal of mineral fouling, and the formation of sheet metal [2-4]. Pulses ranging from 25 to 40 kV and 600 to 900 A are generated inside of the chamber and the bellow motion is captured using a slow motion video camera. The maximum displacements measured are from 0.7 to 1.2 mm and show that there is a correlation between discharge energy input to the water and the displacement that is generated. Subsequent oscillations of the bellow are created by the spring force of the bellow and vapor in the chamber. Using microsecond shutter speed ICCD imaging, the development of the discharge bubble and spark can be observed and measured.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.902-905
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• 2012

This study is explore the photoelectric conversion change of dye-sensitized solar cells with surface treatment of the conductive substrate. gases of FTO surface treatment were $N_2$, and $O_2$. Treatment conditions of surface were gas flux from 25 sccm to 50 sccm and RF power were from 25 W to 50 W. Treatment time and pressure were fixed 5 min and 100 mtoor. The best sheet resistance and surface roughness were obtained by $O_2$ 50 sccm and 50 W and that result were 7.643 ${\Omega}/cm^2$ and 17.113 nm, respectively. The best efficiency result was obtained by $O_2$ 50 sccm and 50 W and that result of Voc, Jsc, FF and efficiency were 7.03 V, 14.88 $mA/cm^2$, 63.75% and 6.67%, respectively.

• 대한금속재료학회지
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• 제49권4호
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• 한국임상수의학회지
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• 제24권4호
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• pp.644-646
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• 2007

This report deals with a 9-year-old neutered male Yorkshire terrier that had been suffered from vomiting, bloody diarrhea, anorexia. On exploratory laparotomy, pale-pink $10{\times}6cm$ duodenal mass was found and submitted to the Department of Veterinary Pathology, College of Veterinary Medicine, Seoul National University. Histologically, the duodenal mass consisted of compact sheet of poorly demarcated, highly infiltrative neoplasm. The neoplastic cells were round to polygonal and contained scant to moderate amounts of granular basophilic cytoplasm and eccentrically located irregularly round nuclei with stippled chromatins. The neoplastic cells were positive to lamda light chain immunohistochemically but were uniformly negative for toluidine blue stain and giemsa stains. Based on these results, this case was diagnosed as primary extramedullary plasma cell tumor of duodenum.