• Textile Coloration and Finishing
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• v.22 no.4
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• pp.300-305
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• 2010

Poly(ethylene terephthalate)(PET) tire cord has relatively lower adhesion properties caused by limited reacting sites. In order to improve the adhesion force between PET tire cord and rubber, an additional process to activate surface of PET has been employed. Atmospheric plasma was used to substitute the chemical finishing process of PET tire cord as a green dipping process. Contact angle was measured to confirm surface change of PET after plasma treatment. The treated PET tire cords with/without resorcinol-formaldehyde-latex(RFL) and unvulcanized rubber were vulcanized in a testing mold at $160^{\circ}C$. After atmospheric plasma treatment of PET tire cord, adhesion force was somewhat increased under some conditions.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.851-856
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• 1996

Copper Phthalocyanine (CuPc) thin films were fabricated on the silicon wafers by plasma activated evaporation method and structural analysis were carried out with various spectroscopies. The CuPc films had dense and smooth morphology and they also showed good mechanical properties and chemical resistance. The main molecular structure of the CuPc, which is the conjugated aromatic heterocyclic ring structure, was maintained even in the plasma process. However, metal-ligand (Cu-N) bands were deformed by the plasma process and the structure became amorphous especially at higher process pressures. Oxygen impurities were incorporated in the film and carboxyl functional groups were formed at the peripheral benzene ring. The structure and morphology of the films were dependent on the process pressure but relatively irrespective of the RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.251.1-251.1
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• 2013

Combination of oxidative vacuum annealing and oxygen plasma treatment can serve as a simple and efficient method of line-width modification of imprinted nanopatterns. Since the vacuum annealing and oxygen plasma could lead mass loss of polymeric materials, either one of the process can yield a narrowed patterns. However, the vacuum annealing process usually demands quite high temperatures (${\geq}300^{\circ}C$) and extended annealing time to get appreciable line-width reduction. Although the plasma treatment may be considered as an effective low temperature rapid process for the line-width reduction, it is also suffering for the lowered controllability on application to very fine patterns. We have found that the vacuum annealing temperature can be lowered by introducing the oxygen in the vacuum process and that the combination of oxygen plasma treatment with the vacuum annealing could yield the best result in the line-with reduction of the imprinted polymeric nanopatterns. Well-defined line width reduction by more than 50% was successfully demonstrated at relatively low temperatures. Furthermore, it was verified that this process was applicable to the nanopatterns of different shapes and materials.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.211-215
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• 2017

Reactive Ion Etching (RIE) and wet etching are employed in existing texturing processes to fabricate solar cells. Laser etching is used for particular purposes such as selective etching for grooves. However, such processes require a higher level of cost and longer processing time and those factors affect the unit cost of each process of fabricating solar cells. As a way to reduce the unit cost of this process of making solar cells, an atmospheric plasma source will be employed in this study for the texturing of crystalline silicon wafers. In this study, we produced the atmospheric plasma source and examined its basic properties. Then, using the prepared atmospheric plasma source, we performed the texturing process of crystalline silicon wafers. The results obtained from texturing processes employing the atmospheric plasma source and employing RIE were examined and compared with each other. The average reflectance of the specimens obtained from the atmospheric plasma texturing process was 7.88 %, while that of specimens obtained from the texturing process employing RIE was 8.04 %. Surface morphologies of textured wafers were examined and measured through Scanning Electron Microscopy (SEM) and similar shapes of reactive ion etched wafers were found. The Power Conversion Efficiencies (PCE) of the solar cells manufactured through each process were 16.97 % (atmospheric plasma texturing) and 16.29 % (RIE texturing).

• Journal of Korean Society for Atmospheric Environment
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• v.16 no.3
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• pp.247-256
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• 2000

Basic characteristics of non-thermal plasma process to remove C2H4 and NO have been experimentally investigated with a packed-bed type reactor and an ac power supply. The performance of the non-thermal plasma generated by ac power supply was compared with that of a wire-plate type reactor equipped with a pulsed power supply. The result shows that the non-thermal plasma can be effectively generated with an AC power supply that can be easily fabricated with conventional techniques. In order to understand the basic reaction mechanisms of the non-thermal plasma process, parametric tests for different carrier gases(air and nitrogen) and for different reaction pathways have been performed. The test results show that O3 generated by non-thermal plasma plays an dominant role to oxidize C2H4 and NO over N and O radicals when these pollutant gases are carried by dry air under room temperature condition. Experimental observations, however, indicate that N and O radicals can significantly affect on the removal process of the pollutant gases under certain conditions.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.5
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• pp.40-46
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• 2017

A plasma gas control apparatus for semiconductor plasma etching processes securely holds a cathode for forming a plasma, confines the plasma during the plasma etching process, and discharges gas after etching. It is a key part of the etching process. With the advancement of semiconductor technology, there is increasing interest in parts for semiconductor manufacturing that directly affect wafers. Accordingly, in order to replace the plasma gas control device with a CVD-SiC material superior in mechanical properties to existing SiCs (Sintered-SiC, RB-SiC), a study on the grinding characteristics of CVD-SiC was carried out. It is confirmed that the optimal grinding condition was obtained when the result table feed rate was 2 m/min and the infeed depth was $5{\mu}m$.

• Transactions on Control, Automation and Systems Engineering
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• v.2 no.4
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• pp.268-273
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• 2000

Plasma models are crucial to equipment design and process optimization. A radial basis function network(RBFN) in con-junction with statistical experimental design has been used to model a process plasma. A 2$^4$ full factorial experiment was employed to characterized a hemispherical inductively coupled plasma(HICP) in characterizing HICP, the factors that were varied in the design include source power, pressure, position of shuck holder, and Cl$_2$ flow rate. Using a Langmuir probe, plasma attributes were collected, which include typical electron density, electron temperature. and plasma potential as well as their spatial uniformity. Root mean-squared prediction errors of RBEN are 0.409(10(sup)12/㎤), 0.277(eV), and 0.699(V), for electron density, electron temperature, and Plasma potential, respectively. For spatial uniformity data, they are 2.623(10(sup)12/㎤), 5.704(eV) and 3.481(V), for electron density, electron temperature, and plasma potential, respectively. Comparisons with generalized regression neural network(GRNN) revealed an improved prediction accuracy of RBFN as well as a comparable performance between GRNN and statistical response surface model. Both RBEN and GRNN, however, experienced difficulties in generalizing training data with smaller standard deviation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.43-43
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• 2010

We have characterized the parametric and functional properties of live cell and cancer cell according to plasma treatment conditions using Atmospheric Pressure (AP) Plasma with uniquely designed low temperature arc-free unit. AP plasma system showed very highly efficient capabilities of reacting and interfacing directly with live and cancer cells. The parametric results with the types of gases, applied power, applied gap, and process times on cells will be presented in accordance with functional studies of the works. The growth of cancer cells is directly influenced by AP plasma exposure with evaluating plasma conditions in several human cancer cells and understanding how plasma exposure alters molecular signaling pathways. The cells exhibit a slower or faster growth rates compared with untreated cells, depending on the cell types. These results strongly support the conclusion that alterations in one or more of each gene are responsible, at least in part, for plasma-induced apoptosis in cancer cells. In addition, it also will be presented that AP plasma has an important role for the improvement of sensor performance due to excellent interface property between enzyme and metal electrode for bio sensor manufacturing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.302-305
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• 2000

It is important to control the electron energy distribution to have high quality plasma process. A conventional inductively coupled plasma(ICP) source with 13.56MHz power is not adequate for low damage sub-half micron patterning process due to higher electron temperature. Only the pulsed plasma technique seems to provide low electron temperature, and thus low process damage. Recently, a novel method proposed by us, named as ‘Enhanced-ICP’, which uses periodic weak axial magnetic field added to a normal ICP source, has shown great improvement in etch characteristics. changes of plasma characteristics according to the frequency of time-varying axial magnetic field have been observed by probe-time-averaged Langmuir probe.