• Journal of Industrial Technology
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• v.26 no.B
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• pp.173-181
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• 2006

We analyzed systematically particle growth in the pulsed $SiH_4$ plasmas by a numerical method and investigated the effects of pulse modulations (pulse frequencies, duty ratios) on the particle growth. We considered effects of particle charging on the particle growth by coagulation during plasma-on. During plasma-on ($t_{on}$), the particle size distribution in plasma reactor becomes bimodal (small sized and large sized particles groups). During plasma-off ($t_{off}$), there is a single mode of large sized particles which is widely dispersed in the particle size distribution. During plasma on, the large sized particles grows more quickly by fast coagulation between small and large sized particles than during plasma-off. As the pulse frequency decreases, or as the duty ratio increases, $t_{on}$ increases and the large sized particles grow faster. On the basis of these results, the pulsed plasma process can be a good method to suppress efficiently the generation and growth of particles in $SiH_4$ PCVD process. This systematical analysis can be applied to design a pulsed plasma process for the preparation of high quality thin films.

• Journal of the Korean institute of surface engineering
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• v.31 no.6
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• pp.325-333
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• 1998

A duplex surface treatment process of simultaneous aluminizing-chromizing process followed by plasma nitriding was performed on AISI HI3 steel and STS 403 steel. The properties of these duplex-treated steels were investigated and were compared with those of steels treated by single process of either simultaneous aluminizing-chromizing or plasma nilriding, in terms of microstructure, microhardness and high temperature wear resistance. Sim~dtaneous alumizing-chromizing process was done using a 2-step coating cycle and plasma nitriding process was done at $530^{\circ}C$ for 1.5 hour. AISI HI3 steel and STS 403 steel showed a FeA1 compound layer of approximately 350$\mu\textrm{m}$ thickness on the surface after simultaneous diffusion coating and nitrided layer of approximately 70-80$\mu\textrm{m}$ formed after the subsequent plasma nitriding process. The microhardness was improved much more by the duplex surface heatment than only by plasma nitriding. In addition the duplex treated specimens showed an improved high temperature wear resistance.

• Electrical & Electronic Materials
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• v.15 no.9
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• pp.10-14
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

• Journal of Environmental Science International
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• v.12 no.12
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• pp.1255-1260
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• 2003

Plasma-photocatalytic oxidation process was applied in the decomposition of Triethylamine(TEA) and Methyl ethyl ketone(MEK). Plasma reactor was made entirely of pyrex glass and consists of 24mm inner diameter, 1,800mm length and discharge electrode of 0.4mm stainless steel. And initial concentrations of TEA and MEK for plasma-photocatalytic oxidation are 100 ppm. Odor gas samples were taken by gas-tight syringe from a glass sampling bulb which was located at reactor inlet and outlet, and TEA and MEK were determined by GC-FID. For plasma process, the decomposition efficiency of TEA and MEK were evaluated by varying different flowrates and decomposition efficiency of TEA and MEK increased considerably with decreasing treatment flowrates. For photocatalytic oxidation process, also the decomposition efficiency of TEA and MEK increased considerably with decreasing treatment flowrates. The decomposition efficiency of MEK was 57.8％, 34.2％, 18.8％ respectively and the decomposition efficiency of TEA was reached all 100％. This result is higher than that of plasma process only, From this study, the results indicate that plasma-photocatalytic oxidation process is ideal for treatment of TEA and MEK.

• Applied Science and Convergence Technology
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• v.26 no.6
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• pp.164-173
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• 2017

Across the most industry, the demand for nanoparticles is increasing. Therefore, many studies have been carried out to synthesize nanoparticles using various methods. The aim of this paper is to introduce an industry-applicable as well as financially and environmentally effective solution plasma process. The solution plasma process involves fewer chemicals than the traditional kit, and can be used to replace many of the chemical agents employed in previous synthesis of nanoparticles into plasma. In this study, this process is compared to the wet-reaction process that has thus far been widely used in the most industry. Furthermore, the solution plasma process has been classified into four different types (in-solution, out of solution, direct type, and remote type), according to its plasma occurrence position and plasma types. Thus, the source of radicals, nanoparticle synthesis, and modification methods are explained for each design. Lastly, unlike nanoparticles with hydrophilic functional groups that are made inside the solution, a nanoparticle synthesis and modification method to create a hydrophobic functional group is also proposed.

• Journal of the Korean Society of Combustion
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• v.10 no.4
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• pp.24-32
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• 2005

Various types of plasma source applied in $CH_4$ decomposition process are compared. DBD by pulse and AC power, spark by pulse and AC power, rotating arc and hollow cathode plasma are chosen to be compared. The results show that $CH_4$ conversion per given unit power is relatively high in hollow cathode plasma and rotating arc that induces rather high temperature condition and that is why both thermal dehydration and plasma induced decomposition contribute for the overall process. In case of DBD wherein high temperature electron and low temperature gas molecule coexist, the process shows low conversion rate, for in rather low temperature condition the contribution of thermal dehydration is lowered. Selectivity of $C_2H_6$ and $C_2H_2$ is shown to be a good parameter of the relative contribution of plasma chemistry in the overall process. From the results we concluded that required condition of plasma source for a cost effective and high yield $CH_4$ decomposition is to have characteristics of both thermal plasma and non thermal plasma in which temperature is high above a certain threshold state for thermal dehydration and electron induced collision is maximized in the same breath.

• Journal of Institute of Control, Robotics and Systems
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• v.4 no.4
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• pp.433-440
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• 1998

The purpose of this study is to provide an integrated process control system for plasma etching. The control system is designed to employ neural network for the modeling of plasma etching process and to utilize genetic algorithm to search for the appropriate selection of control input variables, and to provide a control chart to maintain the process output within a desired range in the real plasma etching process. The target equipment is the one operating in DRAM production lines. The result shows that the integrated system developed is practical value in the improved performance of plasma etching process.

• Particle and aerosol research
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• v.5 no.3
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• pp.95-109
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• 2009

A low temperature plasma process has been widely used for semiconductor fabrication and can also be applied for the preparation of solar cell, MEMS or NEMS, but they are notorious in the point of particle contamination. The nano-sized particles can be generated in the low temperature plasma process and they can induce several serious defects on the performance and quality of microelectronic devices and also on the cost of final products. For the preparation of high quality thin films of high efficiency by the low temperature plasma process, it is desirable to increase the deposition rate of thin films with reducing the particle contamination in the plasmas. In this paper, we introduced the studies on the generation and growth of nanoparticles in the low temperature plasmas and tried to introduce the recent interesting studies on nanoparticle generation in the plasma reactors.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2020.06a
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• pp.83-84
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• 2020

In present study, we have deposited the Zinc coating using arc thermal spray and plasma arc spray processes onto the steel substrate and durability of the deposited coating was evaluated. The bond adhesion result shows that plasma arc sprayed Zn coating exhibited higher in its value compared to arc thermal spray. SEM shows that Zn coating deposited by plasma arc process is more compact, less porous and adherent compare to arc spray process. The corrosion resistance properties are evaluated in artificial ocean water solution with exposure periods. EIS results show that total impedance at 0.01 Hz of plasma arc sprayed coating is higher than arc thermal spray owing to the compact and less porous morphology. It is concluded that plasma arc sprayed Zn coating is better than arc thermal spray process.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.132-132
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• 2015

Virtual metrology (VM) model based on plasma information (PI) parameter for C4F8 plasma-assisted oxide etching processes is developed to predict and monitor the process results such as an etching rate with improved performance. To apply fault detection and classification (FDC) or advanced process control (APC) models on to the real mass production lines efficiently, high performance VM model is certainly required and principal component regression (PCR) is preferred technique for VM modeling despite this method requires many number of data set to obtain statistically guaranteed accuracy. In this study, as an effective method to include the 'good information' representing parameter into the VM model, PI parameters are introduced and applied for the etch rate prediction. By the adoption of PI parameters of b-, q-factors and surface passivation parameters as PCs into the PCR based VM model, information about the reactions in the plasma volume, surface, and sheath regions can be efficiently included into the VM model; thus, the performance of VM is secured even for insufficient data set provided cases. For mass production data of 350 wafers, developed PI based VM (PI-VM) model was satisfied required prediction accuracy of industry in C4F8 plasma-assisted oxide etching process.