• 제목/요약/키워드: plasma

검색결과 17,061건 처리시간 0.05초

APPLICATION OF RADIO-FREQUENCY (RF) THERMAL PLASMA TO FILM FORMATION

  • Terashima, Kazuo;Yoshida, Toyonobu
    • 한국표면공학회지
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    • 제29권5호
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    • pp.357-362
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    • 1996
  • Several applications of radio-frequency (RF) thermal plasma to film formation are reviewed. Three types of injection plasma processing (IPP) technique are first introduced for the deposition of materials. Those are thermal plasma chemical vapor deposition (CVD), plasma flash evaporation, and plasma spraying. Radio-frequency (RF) plasma and hybrid (combination of RF and direct current(DC)) plasma are next introduced as promising thermal plasma sources in the IPP technique. Experimental data for three kinds of processing are demonstrated mainly based on our recent researches of depositions of functional materials, such as high temperature semiconductor SiC and diamond, ionic conductor $ZrO_2-Y_2O_3$ and high critical temperature superconductor $YBa_2Cu_3O_7-x$. Special emphasis is given to thermal plasma flash evaporation, in which nanometer-scaled clusters generated in plasma flame play important roles as nanometer-scaled clusters as deposition species. A novel epitaxial growth mechanism from the "hot" clusters namely "hot cluster epitaxy (HCE)" is proposed.)" is proposed.osed.

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Transport of space charge between sub-pixels in AC-plasma cell discharge

  • Lee, S.B.;Park, E.Y.;Han, Y.G.;Moon, M.W.;Oh, P.Y.;Song, K.B.;Lee, H.J.;Son, C.G.;Jeong, S.H.;Yoo, N.L.;Hong, Y.J.;Jeong, S.J.;Kim, J.H.;Park, S.O.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.929-931
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    • 2006
  • In this experiment, we have investigated that the transported space charge between sub-pixels in AC-plasma cell discharge. The test pulse 30 V, $5{\mu}s$ was applied to the address electrodes of neighbor cells of discharge occurred cells. And we have measured the transported space charge between sub-pixels in accordance with the various last sustain pulse widths t(time gap between the rising edges of sustain and test pulses) of 0.2 to $3{\mu}s$. It was observed that the peak value of transported space charge has been shown to be 21.5pC at $1.0{\mu}s$. And the IR peak value have been occured after $0.51{\mu}s$ with respect to sustain voltage.

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Plasma etching behavior of RE-Si-Al-O glass (RE: Y, La, Gd)

  • 이정기;황성진;이성민;김형순
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.49.1-49.1
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    • 2010
  • The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

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A study of characteristics for Image sticking in AC - Plasma Display Panel

  • Han, Yong-gyu;Lee, S.B.;Jeong, S.H.;Son, C.G.;Yoo, N.L.;Lee, H.J.;Lim, J.E.;Lee, J.H.;Jeoung, J.M.;Ko, B.D.;Oh, P.Y.;Moon, M.W.;Choi, Eun-Ha
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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    • pp.263-265
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    • 2005
  • In the alternative current plasma display panel(AC-PDP) technology, it is very important to remove the image sticking for improving an image quality. In this paper, we have investigated the driving method of alternative current plasma display panel(AC-PDP) for preventing image sticking. We have investigated the driving method of alternative current plasma display panel(AC-PDP) for preventing image sticking. The preventing method of image sticking was proposed by adopting the Sticking Remove Pulse(SRP). The variation of brightness is most affected by the MgO to be formed at the surface of the phosphor layer. As a result, the image sticking is reduced when the driving method adopted an SRP.

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Oxygen Plasma Characterization Analysis for Plasma Etch Process

  • Park, Jin-Su;Hong, Sang-Jeen
    • 동굴
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    • 제78호
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    • pp.29-31
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    • 2007
  • This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

Bovine Plasma의 Mayonnaise 제조 적성에 관한 연구 (The Effect of Bovine Plasma for the Preparation of Mayonnaise on Quality Characteristics)

  • 이진영
    • 한국식품영양학회지
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    • 제15권4호
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    • pp.350-356
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    • 2002
  • 표준 마요네즈 제조에 Bovine Plasma를 첨가하거나, 난황의 일부 혹은 전량을 Bovine Plasma으로 대체하여 마요네즈를 제조하고 점도, 색도, 유화 안정성, 관능검사를 통하여 Bovine Plasma의 마요네즈의 제조적성을 검토한 결과는 다음과 같다. 1. 점도는 표준 마요네즈(난황비율 12%) 제조 배합비에 0.01~0.1% Bovine Plasma를 첨가하였을 때 다소 증가하였고, 난황 첨가비를 50% 감소한 시료에서도 l~3% Bovine Plasma를 첨가함에 따라 표준 마요네즈와 근접 한 점도를 나타냈다. 난황을 전혀 첨가하지 않고 Bovine Plasma만으로 제조한 경우도 5% 첨가수준에서 표준 마요네즈에 근접한 점도를 나타냈다. 2. 색도의 측정결과, 난황의 비율(6, 12%)과 Bovine Plasma의 첨가비율에 따라 명도값을 나타내는 L값은 전체 시료간, 저장기간(3$0^{\circ}C$ 21일간)에 따른 큰 차이를 보이지 않았으나, 황색도를 나타내는b값은 난황의 비율에 따라 뚜렷한 차이를 보였고, Bovine Plasma의 첨가비율에 따른 차이는 보이지 않았다. 3. Bovine Plasma의 첨가가 유화 안정성에 미치는 영향(3$0^{\circ}C$ 21일간)을 검토한 결과, 표준 마요네즈에 Bovine Plasma를 첨가함에 따라 안정성이 증가하였고, 난황비율을 표준 마요네즈의 50%로 감소시켜도 1~3% Bovine Plasma를 첨가함에 따라 표준 마요네즈와 근접한 유화 안정성을 보였다. 난황을 전혀 첨가하지 않고 Bovine Plasma만으로 제조한 경우도 5% 첨가수준에서 표준 마요네즈와 근접한 유화 안정성을 나타냈다. 4. 관능검사에서 표준 마요네즈에 0.0l~0..1% Bovine Plasma를 첨가한 시료는 Bovine Plasma의 첨가비율에 따라 항목별로 다소 차이는 있었으나 전반적으로 낮은 기름냄새, 달걀냄새, 식초냄새, 기름맛, 달걀맛, 느끼한 맛, 식초맛을 나타내고, 냄새와 맛의 조화도가 높아 표준 마요네즈보다 선호되는 것으로 평가되었다. 또한, 난황의 첨가비율을 50 %로 감소시키고 l~3% Bovine Plasma를 첨가하여 제조한 마요네즈는 색을 제외하고는 모든 항목에서 표준 마요네즈와 유의적인 차이를 보이지 않았다. 반면에, 난황을 전혀 첨가하지 않고 5%의 Bovine Plasma만으로 제조한 마요네즈는 표준 마요네즈와 비교했을 때 다소 강한 기름냄새와 기름맛, 난황이 첨가되지 않아 색에 대한 기호도의 저하 등 관능적인 면에서 전반적으로 낮은 결과를 보였다.

개선된 플라즈마 공정을 이용한 Ralstonia Solanacearum 불활성화에 관한 연구 (A Study on the Ralstonia Solanacearum Inactivation using Improved Plasma Process)

  • 김동석;박영식
    • 한국환경과학회지
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    • 제23권3호
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    • pp.369-378
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    • 2014
  • Effect of improvement of the dielectric barrier discharge (DBD) plasma system on the inactivation performance of bacteria were investigated. The improvement of plasma reactor was performed by combination with the basic plasma reactor and UV process or combination with the basic plasma reactor and circulation system which was equipped with gas-liquid mixer. Experimental results showed that tailing effect was appeared after the exponential decrease in basic plasma reactor. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of basic plasma process and UV process. The application of gas-liquid mixing device on the basic plasma reactor reduced inactivation time and led to complete sterilization. The effect existence of gas-liquid mixing device, voltage, air flow rate (1 ~ 5 L/min), water circulation rate (2.8 ~ 9.4 L/min) in gas-liquid mixing plasma, plasma voltage and UV power of gas-liquid mixing plasma+UV process were evaluated. The optimum air flow rate, water circulation rate, voltage of gas-liquid mixing system were 3 L/min, 3.5 L/min and 60 V, respectively. There was no enhancement effect on the Ralstonia Solanacearum inactivation with combination of gas-liquid mixing plasma and UV process.

Ion-induced secondary electron emission coefficient and work function for MgO thin film with $O_2$ plasma treatment

  • Jung, J.C.;Jeong, H.S.;Lee, J.H.;Oh, J.S.;Park, W.B.;Lim, J.Y.;Cho, J.W.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.525-528
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    • 2004
  • The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

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지구력 훈련이 혈중 호모시스테인과 비타민 B 수준에 미치는 영향 -남자 고등학생 필드하키선수를 대상으로- (Effect of Endurance Training on the Plasma Honocysteine and B Vitamin Levels in Male Adolescent Field Hockey Players)

  • 강해선;이명천;유영채;장남수
    • Journal of Nutrition and Health
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    • 제37권10호
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    • pp.881-887
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    • 2004
  • Elevated plasma homocysteine is an independent risk factor for the development of cardiovascular disease. Exercise is generally believed to reduce the plasma homocysteine levels and therefore, being beneficial for cardiovascular disease (CVD). However, there is a possibility that athletes undergoing strenuous training and competition which increase oxidative stress may suffer from increased plasma homocysteine levels. The purpose of this study was to investigate the influence of endurance training on the plasma concentrations of B vitamins and homocysteine in 23 male adolescent field hockey players. Data collection and blood sampling was performed during the training period and non-training period. Following the training period, significant changes in energy and vitamin B6 intakes were observed in these subjects. Plasma vitamin B2, pyridoxal phosphate (PLP) and homocysteine levels were significantly higher during the training period than non-training period, whereas no difference was observed in plasma folate and vitamin B12 levels. Positive correlation was observed between plasma folate and folic acid intakes. When energy, B vitamin intakes were adjusted there was a significant negative correlation between plasma homocysteine levels and plasma riboflavin, folate and vitamin B12 levels. In conclusion, it is suggested that athletes with oxidative stress by strenuous exercise may need B vitamins since riboflavin, folic acid and vitamin Bl2 were shown to be negatively correlated with plasma homocysteine in athletes during the training period.