• 제목/요약/키워드: piezoelectric effect

검색결과 649건 처리시간 0.043초

Influence of gate insulator treatment on Zinc Oxide thin film transistors.

  • 김경택;박종완;문연건;김웅선;신새영
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2010년도 춘계학술발표대회
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    • pp.54.2-54.2
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    • 2010
  • 최근까지는 주로 비정질 실리콘이 디스플레이의 채널층으로 상용화 되어왔다. 비정질 실리콘 기반의 박막 트랜지스터는 제작의 경제성 및 균일성을 가지고 있어서 널리 상용화되고 있다. 하지만 비정질 실리콘의 구조적인 문제인 낮은 전자 이동도(< $1\;cm^2/Vs$)로 인하여 디스플레이의 대면적화에 부적합하며, 광학적으로 불투명한 특성을 갖기 때문에 차세대 디스플레이의 응용에 불리한 점이 있다. 이런 문제점의 대안으로 현재 국내외 여러 연구 그룹에서 산화물 기반의 반도체를 박막 트랜지스터의 채널층으로 사용하려는 연구가 진행중이다. 산화물 기반의 반도체는 밴드갭이 넓어서 광학적으로 투명하고, 상온에서 증착이 가능하며, 비정질 실리콘에 비해 월등히 우수한 이동도를 가짐으로 디스플레이의 대면적화에 유리하다. 특히 Zinc Oxide의 경우, band gap이 3.4eV로써, transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers 그리고 UV detectors 등의 많은 응용에 쓰이고 있다. 또한, a-Si TFTs에 비해 ZnO-based TFTs의 경우 우수한 소자 성능과 신뢰성을 나타내며, 대면적 제조시 우수한 균일성 및 낮은 생산비용이 장점이다. 그러나 ZnO-baesd TFTs의 경우 일정한 bias 아래에서 threshold voltage가 이동하는 문제점이 displays의 소자로 적용하는데 매우 중요하고 문제점으로 여겨진다. 특히 gate insulator와 channel layer사이의 interface에서의 defect에 의한 charge trapping이 이러한 문제점들을 야기한다고 보고되어진다. 본 연구에서는 Zinc Oxide 기반의 박막 트랜지스터를 DC magnetron sputtering을 이용하여 상온에서 제작을 하였다. 또한, $Si_3N_4$ 기판 위에 electron cyclotron resonance (ECR) $O_2$ plasma 처리와 plasma-enhanced chemical vapor deposition (PECVD)를 통하여 $SiO_2$ 를 10nm 증착을 하여 interface의 개선을 시도하였다. 그리고 TFTs 소자의 출력 특성 및 전이 특성을 평가를 하였고, 소자의 field effect mobility의 값이 향상을 하였다. 또한 Temperature, Bias Temperature stability의 조건에서 안정성을 평가를 하였다. 이러한 interface treatment는 안정성의 향상을 시킴으로써 대면적 디스플레의 적용에 비정질 실리콘을 대체할 유력한 물질이라고 생각된다.

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분극전계가 모포트로픽 상경계 부근의 PZT 세라믹스의 공진주파수의 온도의존성에 미치는 영향 (The Effect of Poling Strength on Temperature Dependence of Resonance Frequency of PZT Ceramics Near the Morphotropic Phase Boundary)

  • 양정보;양완석;이개명
    • 전기학회논문지
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    • 제57권7호
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    • pp.1213-1217
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    • 2008
  • Poling is an important process in fabricating PZT ceramic devices such as filters and resonators and activates piezoelectricity to sintered PZT ceramics. Tolerance of the operating frequency of these devices is tightly required in applications. And a factor to attribute the tolerance is the temperature dependence of the resonance frequency of PZT ceramics. In this paper the relationship of poling strength and temperature dependence of resonance frequency of PZT specimens was studied. The $Pb(Zr_{0.53}Ti_{0.47})O_3$ ceramics were fabricated and the poling strengths were chosen to be 0.5, 1.5, 2.5 and 3.5 [kV/mm]. The dielectric constant of the specimen poled in poling strength 0.5 [kV/mm] was less than that of unpoled specimen and the specimen poled in higher electric field had the higher dielectric constant. (002) peak in X-ray diffraction patterns of the specimens increased as poling strength increased. And the change of resonance frequency of the specimens according to the variation of temperature was measured. Resonance frequency of all specimens increased as the temperature increased. The specimen poled in higher electric field had the smaller positive temperature coefficient of resonance frequency. The effect that temperature coefficient of resonance frequency becomes smaller is obtained when Zr mole in PZT composition equation increase. Controlling the poling strength is believed to be a method to adjust the temperature stability of resonance frequency of the PZT ceramic devices.

초음파 피로시험법을 이용한 엔지니어링 플라스틱 (Polyoxymethylen ; POM)의 내구성 평가 (Durability Assessment of Polyoxymethylen Using Ultrasonic Fatigue Testing)

  • 조인식;황정호;오주연;김현창;오세훈;이창순;박인규
    • 대한기계학회논문집A
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    • 제39권8호
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    • pp.781-785
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    • 2015
  • 엔지니어링 플라스틱(Engineering Plastic ; EP)에 대한 내구성 평가를 위해 현재 새롭게 국내에서 개발한 초음파 피로시험법을 이용하여 EP 중에서도 결정화 속도가 빠르고 결정화도가 높은 범용 POM(Polyoxymethylene) 소재에 대한 초음파 가속피로시험 거동을 평가하고자 하였다. 이에 본 연구에서 사용된 POM 소재의 밀도는 $1.37g/cm^3$, 동탄성계수는 3.49 GPa 로 측정되었으며, 초음파피로시험 20kHz, 응력비 R= -1 의 판상시편 두께 (4t, 7t, 10t)에 따른 피로수명평가 결과 전체 응력진폭 5.0~6.0MPa 부위에서 피로한도를 확인하였다. 피로시험 후 파단 면을 관찰한 결과 7t, 10t 두께 시편의 크랙 시작위치에서 미소 공동들이 서로 연결된 형태의 잔금(crazing) 균열현상으로 파단된 dimple 구조형상을 전자현미경을 통해 확인할 수 있었다.

Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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NiO와 $MnO_2$ 의 첨가가 PLZT의 유전특성과 압전특성 및 분극반전특성에 미치는 효과 (The Effect of NiO and $MnO_2$ Addition on the Dielectric Piezoelectric and Polarization-Reversal Properties of PLZT)

  • 조경익;주웅길;고경신
    • 한국세라믹학회지
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    • 제20권4호
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    • pp.315-323
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    • 1983
  • Effect of NiO and $MnO_2$ addtivies on the dielectric piezoelectrics and polarization-reversal properties of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ ceramics have been investigated. The specimens were prepared by the mixed oxide techni-que and atmosphere sintering method. The room temperature X-ray diffraction studies show that perfect perovskite solution with tetragonal structure was obtained from PLZT and its additives. The dielectric constant and dissipation factor decreased with the addition of both NiO and $MnO_2$ The Curie of Curie temperature was not observed but they displayed broadened maxima. The planar coupling factor was improved by addition of NiO and also increased with increasing sintering time carried out at 105$0^{\circ}C$ Addition of $MnO_2$ yielded a markedly high mechanical quality factor. The space-charge field decreased with the addition of NiO but increased with the addition of $MnO_2$ The planar coupling factor and space-charge field showed same dependence on the additivies. The tetragonality Curie temperature and planar coupling factor of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ were higher than those of $(Pb_{0.936} La_{0.064})$$(Zr_{0.568}NU_{0.032}Ti_{0.40})_{0.984}O_3$ but the grain size lattic parameter dielectric constant dissipation factor mechanical quality factor and space-charge field of the former were lower than those of the latter.

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지각과민처치제가 초음파 스케일링 처리한 비우식성 치경부 병소가 있는 치아의 지각과민증에 주는 영향 (Effect of Dentin Desensitizer on the Hypersensitivity of Teeth with Non-carious Cervical Lesions Subsequent to Ultrasonic Scaling)

  • 조재형;석수황;이상혁;임범순
    • 대한치과재료학회지
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    • 제43권1호
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    • pp.17-28
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    • 2016
  • The aim of this study was to evaluate the changes in dentinal permeability after application of dentin desensitizer on exposed dentin immediately after ultrasonic scaling to teeth with non-carious cervical lesions. Thirty caries-free extracted molars were fixed to slide glasses after horizontally being sectioned at 5 mm below the cemento- enamel junction (CEJ). The prepared specimen was connected to a fluid flow measuring device (nano-Flow), and a V-shaped cavity was formed at the CEJ to imitate the non-carious cervical lesion. After no fluid leakage was confirmed in the connected system with specimen, tooth surface was treated ultrasonic cleaning with piezoelectric ultrasonic scalers until dentinal tubules were exposed. And 6 different desensitizers were applied on exposed dentin. Real-time measurements of dentinal fluid flow were performed during ultrasonic scaling and application of dentin desensitizer. To evaluate the occlusion of exposed dentinal tubules, tooth surface was examined by SEM. Following results were observed. After ultrasonic scaling, more dentinal tubules were exposed on the tooth with non-carious cervical lesions compared to tooth without lesions. The rate of fluid flow measured with nano-Flow system had correlation with the degree of dentin occlusion observed with SEM after application of desensitizers on exposed dentin. Desensitizers with glutaraldehyde and HEMA did not decrease the rate of fluid flow and did not show dentin occlusion. Desensitizers with oxalate showed the limited effects on the rate of fluid flow and dentinal tubule occlusion. Desensitizer with resin monomer showed the significant effect on the rate of fluid flow and dentin occlusion.

(K0.5Na0.5)NbO3 세라믹스의 초기 분말 입도 분포가 소결체의 미세구조에 미치는 영향 (Effect of Initial Particle Size Distribution of (K0.5Na0.5)NbO3 Powders on Microstructure of Their Sintered Ceramics)

  • 유일열;최성희;조경훈
    • 열처리공학회지
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    • 제35권2호
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    • pp.57-65
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    • 2022
  • In this study, the effect of the initial particle size distribution (PSD) of (K0.5Na0.5)NbO3 powders on the microstructure of sintered ceramics was investigated. (K0.5Na0.5)NbO3 powders with uni-, bi-, tri-, and quad-modal PSDs were obtained through a planetary ball-mill. For the specimens sintered at 1080℃, the growth of abnormal grains was promoted from the powders exhibiting quad- and tri-modal PSDs with a high content of large particles, resulting in a microstructure in which huge abnormal grains were predominant. However, as the number of peaks in PSD and the overall particle size decreased, the abnormal grain growth was suppressed and the grain growth of small particles started, resulting in a microstructure with a uniform grain size. For the specimens sintered at 1100℃, huge abnormal grains were not observed due to the decrease in the critical driving force for 2D nucleation even when powders with quad- and tri-modal PSDs were used. It was confirmed that when powder with unimodal PSD was used, a uniform microstructure that was not significantly affected by the sintering temperature could be obtained. The results of this study demonstrate that the microstructure of (K0.5Na0.5)NbO3-based ceramics can be controlled by controlling the particle size of the initial powder.

고전압과 고전력 응용을 위한 $Al_{0.3}Ga_0.7N/GaN$ 이종접합 전계효과 트랜지스터의 제작 및 특성에 관한 연구 (Studies on Fabrication and Characteristics of $Al_{0.3}Ga_0.7N/GaN$ Heterojunction Field Effect Transistors for High-Voltage and High-Power Applications)

  • 김종욱;이재승;김창석;정두찬;이재학;신진호
    • 대한전자공학회논문지SD
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    • 제38권8호
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    • pp.13-19
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    • 2001
  • 분자선 결정 성장법을 이용하여 성장된 서로 다른 장벽층의 두께를 갖는 $Al_{0.3}Ga_{0.7}N$ heterojunction field effect transistors (HFETs) 를 제작하여 그 특성을 비교, 관찰하였다. $Al_{0.3}Ga_{0.7}N$층의 두께에 따른 특성의 비교로부터 최적의 2 차원 전자개스 (2 dimensional electron gas) 를 가질 수 있는 $Al_{0.3}Ga_{0.7}N$/GaN HFET 소자 구조를 얻을 수 있었다. $L_g=0.6$ ${\mu}m$$W_g=34\;{\mu}m$ $Al_{0.3}Ga_{0.7}N$/GaN (20 nm/2 mm) HFET에서 Imax ($V_{gs}=1\;V$) 와 $G_{m,maX}$는 각각 1.155 A/mm 및 250ms/${\mu}m$ 이었으며 $F_t=13$ GHz 와 $F_{max}=48$ GHz의 우수한 고주파 특성을 얻을 수 있었고 2 inch 기판상에서 제작된 소자들은 5% 이하의 매우 균일한 DC 특성을 나타내었다. 이와 더불어 게이트-드레인 간의 간격에 따른 소자의 특성을 관찰함으로서 소자의 항복전압과 고주파 특성과의 상관관계를 고찰하였다.

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마찰전기 효과가 접목된 하이브리드 자기-기계-전기 발전 소자의 출력 특성 향상연구 (Enhancement of Power Generation in Hybrid Magneto-Mechano-Electric Generator with Triboelectric Effect)

  • 백창민;김민우;이지원;김현아;정지윤;윤준현;김효일;박예진;김기훈;김소화;김승헌;김정민;이혜선;장정원;정민교;최진혁;하승연;이승아;최한승;류정호
    • 한국전기전자재료학회논문지
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    • 제35권6호
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    • pp.639-646
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    • 2022
  • Energy harvesting technologies that can convert wasted various energy into usable electrical energy have been widely investigated to overcome the limitation of batteries for the powering of IoT sensors and small electronic devices. Hybrid energy harvesting is known as a technology that enhances the output power of single energy harvesting device by housing two or more various energy harvesting mechanisms. In this study, we introduce a hybrid MME (Magneto-Mechano-Electric) generator coupled with the triboelectric effect. Through FEA modeling, four triboelectric materials, including PI (Polyimide), PFA(Teflon), Cu, and Al, were selected and compared with the expected triboelectric potentials. The effect of surface morphology was investigated as well. Among various combination of triboelectric materials and surface morphologies, PFA-Al combination with the surface morphology having nano-scale square projections showed highest output potential under triboelectrification. It is also experimentally confirmed that output voltage and power of the hybrid MME generator with triboelectric material combinations.

초음파 접합 장치의 냉각관 설계 및 접합강도 실험 (Design and Experimental Results for Cooling Tubes of Ultrasonic Bonding Equipment of Ultrasonic Bonding Equipment)

  • 이동욱;전의식
    • 한국산학기술학회논문지
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    • 제15권4호
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    • pp.1879-1884
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    • 2014
  • 최근 미세접합 기술이 다양한 사회에서 주목받고 있다. 미세접합 기술은 레이저 접합 초음파 접합 등이 있다. 그러나 미세 접합의 연구가 많이 부족한 실정이다. 이에 본 논문에서는 초음파 접합장치 구동 시 열평형 상태에서 압전소자에 열영향을 최소화하기 위해 냉각관을 설계하였다. 또한 냉각관이 설계된 초음파 접합 장치를 이용하여 접합 실험을 실시하였다. 다꾸찌 실험계획법을 이용하여 실험을 실시하였으며, 기초실험을 통해 공정변수와 반응 변수를 설정하였다. 접합 실험의 신뢰도를 검증하기 위하여 접합 계면의 미세조직을 관찰하였고, 인장실험을 통해 접합 강도를 확인하였다.