• 동의생리병리학회지
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• 제16권2호
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• pp.373-379
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• 2002

This paper was the design of aerosol generator for inhalation toxicology study of lead and evaluation with real time monitoring, and applied several engineering methodology to classical aerosol generator to cope with it's disadvantages. According to the testing conditions, source temperature 50℃ and inlet-duct band heater temperature 150℃, aerosol generation results for sodium chloride and lead acetate were as followings: CPM(Count Per Minute) for Sodium chloride that used for the testing material in aerosol generation and inhalation system was decreased in the 2nd and the 3rd hour's serial trials, but CVs(coefficient of variation) were maintained within 10%. CPMs for 5 and 2.5 gram of lead acetate that used for aerosol generation and inhalation exposure of lead showed similar results because of the sedimentation of lead acetate on piezoelectric crystal with time. For that reason, heating and mixing of nebulizing solution will be needed to generate lead aerosol with stable profile and maximum generation efficiency. Fluctuations of 10 and 5 gram lead acetate were low but 2.5gram was high. However, CVs for 10, 5, and 2.5gram lead acetate were within 10%. Considering the theoretical efficiencies for sodium chloride and lead acetate, 5gram sodium chloride and 2.5gram lead acetate were appropriate choice. Aerosol generation characteristics for two materials with 1 hour interval were different with respect to the fluctuation of CPM and the decrease to 10gram in it's material. For that reason, sodium chloride can not be used to estimate the aerosol generation and it's related parts for lead acetate. According to the testing conditions, source temperature 20, 50, 70℃, and inlet-duct band heater temperature 20, 50, 100, 150, 200℃, aerosol generation results for sodium chloride and lead acetate were as followings: Excluding inlet-duct band temperature 200℃, maximum CPM for sodium chloride was manifested in source temperature 70℃ with each inlet-duct band temperature conditions. We suggest that this condition was the optimum in the design of aerosol generator, inhalation system, and the testing. Maximum CPMs for 10, 5, and 2.5gram sodium chloride were from source temperature 70℃ and inlet-duct band temperature 20℃. Excluding inlet-duct band temperature 50, 200℃, maximum CPMs for lead acetate were indicated in source temperature 50℃ with each inlet-duct band temperature conditions. We suggest that this condition was the optimum in the design of aerosol generator, inhalation system, and the testing for lead inhalation study. Source and inlet-duct band temperatures for 10, 5, 2.5gram lead acetate were 50 and 100℃, 50 and 100℃, 50 and 150℃, respectively. In conclusion, considering above 2 paragraphs of results for aerosol generation, 5gram efficiencies for sodium chloride, lead acetate were higher than 2.5gram's. If inlet-duct band temperature was same, aerosol generation was increased with increase of source temperature. To get maximum aerosol generation will be the conditions that set the appropriate inlet-duel band temperature for each materials and increase the source temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 수산해양기술연구
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• 제37권3호
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• pp.196-213
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• 2001

체장어군탐지기(fish sizing echo sounder) 의송.수파기로서 사용하기 위한 split beam 음향 변환기를 개발하기 위한 시도로서, Dolph Chebyshev배열 기법을 이용하여 36개의 압전 진동소자에 진폭 가중치를 부여한 평면배열 음향 변환기를 설계.제작하고, 이 변환기의 수중음향방사 특성에 대해 분석.고찰한 결과를 요약하면 다음과 같다. 1. split beam 음향 변환기의 4 개의 독립적인 진동자 블록에 대한 수중에서의 평균적인 공진 및 반공진 주파수는 각각 69.8 kHz. 83.0 kHz이었고, 이들 공진과 반공진 주파수에서의 임피던스는 49.2$\omaga$. 704.7$\omaga$이었다. 음향변환기의 4 개의 모든 진동자 블록 (sum beam)에 대한 수중에서의 공진 및 반공진 주파수는 각각 71.4 kHz, 82.1kHz이었고. 이들 공진과 반공진 주파수에서의 임피던스는 15.2$\omaga$, 17.3$\omaga$이었다. 2 split beam 음향 변환기의 4 개의 독립적인 진동자 블록에 대한 최대 송파전압감도(TVR)는 공통적으로 70.0 kHz에서 165.5 dB이었고, -3 dB 점에 대한 송신 주파수 대역폭은 10.0 kHz이었다. 또한. split beam 음향 변환기의 4 개의 조합된 진동자 블록에 대한 최대 수파감도(SRT)는 공통적으로 75.0 kHz에서 -177.5 dB이었고, -3 dB 점에 대한 수신 주파수 대역폭은 10.0 kHz이었다. 3.split beam 음향 변환기의 모든 진동자 블록에 대한 송신 지향성패턴은 원형이었고, -3 dB점에 대한 수평 및 수직방향에 대한 반감각(half beam angle)은 공통적으로 $9.0^\circ$이었다. 또한. 수평방향에 대한 제 1차 부엽 준위는 $22^\circ$및 $-26^\circ$에서 각각 -19.7 dB. -19.4 dB이었고. 수직방향에 대한 제1차 부엽 준위는 $22^\circ$및 $-26^\circ$에서 각각 -20.1 dB, -22.0 dB로서 설계 목표치 -20 dB과 매우 유사한 값을 나타내었다. 4.split beam 음향 변환기의 송파응답파형과 수파응답파형은 각각 송신 및 수신 공진주파수 부근인 70.0 kHz와 75.0 kHz에서 전기 입력펄스파형과 가장 유사한 특성을 나타내었다. 5. 본 연구에서 설계, 개발한 split beam 음향 변환기의 성능을 분석하기 위해 반사강도 보정을 위한 지향성손실과 물표의 위치각을 추정하기 위한 실험을 행한 결과 실험적으로 추정한 위치각은 실제적인 위치각과 잘 일치하였다.