• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.366-373
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• 2015

Sol-gel binder was prepared by hydrolysis and condensation reaction using boehmite sol and methyltrimethoxysilane as a function of aging-time. The coating slurry was composed of a plate-shape alumina in the sol-gel binder for the EPD process, in which particles dispersed in the slurry were deposited on the electrode under an electric field due to the surface charge. We studied the effects of three parameters: the content of boehmite, the aging time, and the applied voltage, on the physical, thermal, and electrical properties of the hybrid composite films by EPD. The amount of boehmite was 10 ~ 20 wt% and the aging time was 0.5 ~ 72, with a fixed amount of plate-shape alumina of 10 wt%. The condition of applied voltage was 5 ~ 30 V with a distance of 2 cm between the electrode during the EPD process. We confirmed that a structure of hybrid composite films of well-ordered plate alumina was deposited on the substrate when the film was prepared using a sol-gel binder composed of 15 wt% boehmite with 1 hr aging time and EPD at 10 V. The process shows a weight loss of 7% at $500^{\circ}C$ in TGA and a breakdown voltage of 8 kV at $87{\mu}m$.

• Journal of Sensor Science and Technology
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• v.9 no.3
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• pp.171-176
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.146-152
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• 2011

Thermal stability of $Ge_2Sb_2Te_5$ (GST) and $SiO_2$ doped GST (SGST) films for phase change random access memory applications was investigated by observing the change of surface roughness, layer density and composition of both films after isothermal annealing. After both GST and SGST films were annealed at $325^{\circ}C$ for 20 min, root mean square (RMS) surface roughness of GST was increased from 1.9 to 35.9 nm but that of SGST was almost unchanged. Layer density of GST also steeply decreased from 72.48 to 68.98 $g/cm^2$ and composition was largely varied from Ge : Sb : Te = 22.3 : 22.1 : 55.6 to 24.2 : 22.7 : 53.1, while those of SGST were almost unchanged. It was confirmed that the addition of a small amount of $SiO_2$ into GST film restricted the deterioration of physical and chemical properties of GST film, resulting in the better thermal stability after isothermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.207.1-207.1
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• 2014

High-mobility and two dimensional conduction at the interface between two band insulators, LaAlO3 (LAO) and SrTiO3 (STO), have attracted considerable research interest for both applications and fundamental understanding. Several groups have reported the photoconductivity of LAO/STO, which give us lots of potential development of optoelectronic applications using the oxide interface. Recently, a giant photo response of Pd nano particles/LAO/STO is observed in UV illumination compared with LAO/STO sample. These phenomena have been suggested that the correlation between the interface and the surface states significantly affect local charge modification and resulting electrical transport. Water and gas adsorption/desorption can alter the band alignment and surface workfunction. Therefore, characterizing and manipulating the electric charges in these materials (electrons and ions) are crucial for investigating the physics of metal oxide. Proposed mechanism do not well explain the experimental data in various ambient and there has been no quantitative work to confirm these mechanism. Here, we have investigated UV photo response in various ambient by performing transport and Kelvin probe force microscopy measurements simultaneously. We found that Pd nano particles on LAO can form Schottky contact, it cause interface carrier density and characteristics of persistence photo conductance depending on gas environment. Our studies will help to improve our understanding on the intriguing physical properties providing an important role in many enhanced light sensing and gas sensing applications as a catalytic material in different kinds of metal oxide systems.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.155-158
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• 2016

Thermal conductivity is a very important factor for applicability and reliability in electrical devices. In this study, Al/graphite composite is fabricated by a mechanical alloying and heat-treatment and its physical properties are characterized. The XRD peak intensity of the $Al_4C_3$ ceramic phase observed in the heat-treated Al/graphite composite increased with heat-treatment temperature and time. The thermal conductivity of the heat-treated Al/graphite composite sample was very lower than that of the pure Al sample, and increased with heat-treatment temperature and time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.72-72
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• 2001

Plasma polymerized thin films have been deposited on Si(lOO) substrates at $25-400^{\circ}C$ using thiophene ($C_4H_4S$) precursor by plasma assisted chemical vapor deposition (PACVD) method for low-dielectric device application. In order to compare physical properties of the as-grown thin films, the effects of the plasma power, gas flow ratio and deposition temperature on the dielectric constant and thermal stability were mainly studied. XRD and TED studies revealed that the as-grown thin films have highly oriented amorphous polymer structure. XPS data showed that the polymerized thin films that grown under different RF power and deposition temperature as well as different gas ratio of $Ar:H_2$ have different stoichiometric ratio of C and S compared with that of monomer, indicating a formation of mixture polymers. Moreover, we also realized that oxygen free and thermally stable polymer thin films could be grown at even $400^{\circ}C$. The results of SEM, AFM and TEM showed that the polymer films with smooth surface and sharp interface could be grown under various deposition conditions. From the electrical property measurements such as I-V and C-V characteristics, the minimum dielectric constant and the best leakage current were obtained to be about 3.22 and $10-11{\;}A/\textrm{cm}^2$, respectively.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.108-115
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• 2013

Oxide coatings were prepared on Al-1050 substrates by an environment-friendly plasma electrolytic oxidation (PEO) process using an electrolytic solution of $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The effects of three different duty cycles (20%, 40%, and 60%) and frequencies (50 Hz, 200 Hz, and 800 Hz) on the structure and micro-hardness of the oxide coatings were investigated. XRD analysis revealed that the oxides were mainly composed of ${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, and mullite. The proportion of each crystalline phase depended on various electrical parameters, such as duty cycle and frequency. SEM images indicated that the oxide coatings formed at a 60% duty cycle exhibited relatively coarser surfaces with larger pore sizes and sintering particles. However, the oxides prepared at a 20% duty cycle showed relatively smooth surfaces. The PEO treatment also resulted in a strong adhesion between the oxide coating and the substrate. The oxide coatings were found to improve the micro-hardness with the increase of duty cycle. The structural and physical properties of the oxide coatings were affected by the duty cycles.

• Journal of Sensor Science and Technology
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• v.8 no.1
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• pp.53-62
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• 1999

Micro polysilicon actuators, which are widely used in the field of MEMS (Microelectromechanical System) technology, were fabricated using polysilicon thin layers. Polysilicon deposition were carried out to have symmetrical layer structures with a LPCVD (Low Pressure Chemical Vapor Deposition) system, and we have measured physical characteristics by micro test patterns, such as bridges and cantilevers to verify minimal mechanical stress and stress gradient in the polysilicon layers according to the methods of mutilayer deposition, doping, and thermal treatment, also, analyzed the properties of each specimen, which have a different process condition, by XRD, and SIMS etc.. Finally, the fabricated planar polysilicon resonator, symmetrically stacked to $6.5{\mu}m$ thickness, showed Q of 1270 and oscillation ampitude of $5{\mu}m$ under DC 15V, AC 0.05V, and 1000 mtorr pressure. The developed micro polysilicon resonator can be utilized to micro gyroscope and accelerometer sensor.

• Bulletin of the Korean Chemical Society
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• v.15 no.3
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• pp.256-260
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• 1994

Perovskite type oxides of the $Sr_xHo_{1-x}FeO_{3-y}$ system with compositions of x=0.00, 0.25, 0.50, 0.75, and 1.00 have been prepared at 1200$^{\circ}$C in air. X-ray powder diffraction assigns the compositions with x=0.00 and 0.25 to the orthorhombic crystal system and those with x=0.50, 0.75, and 1.00 to the cubic one. The unit cell volumes of solid solutions increase with x in the system. Nonstoichiometric chemical formulas were determined by Mohr salt titration. The mole ratio of $Fe^{4+}$ ions to total iron ions and the concentration of oxygen ion vacancies increase with x. Mossbauer spectra for the compositions of x= 0.00, 0.25, and 0.50 show six lines indicating the presence of $Fe^{3+}$ ions in the octahedral site. However, the presence of $Fe^{4+}$ ions may also be detected in the spectra for the compositions with x=0.25 and x=0.50. In the compositions with x=0.75 and 1.00, single line patterns show also the mixed valence state of $Fe^{3+}$ and $Fe^{4+}$ ions. The electrical conductivity in the temperature range of -100$^{\circ}$C to 100$^{\circ}$C under atmospheric air pressure increases sharply with x but the activation energy decreases with the mole ratio of $Fe^{4+}$ ion. The conduction mechanism of the perovskite system seems to be hopping of the conduction electrons between the mixed valence iron ions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.29-33
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• 1999

Transition metallic $Cr^{3+}$ ion was diffused in white sapphire {0001}, ${10\bar{1}0}$ crystal plane which were grown by the Verneuil, it enhanced and changed the physical, electrical and optical properties of sapphires. After mixing the metallic oxide and metal powder, it were used for diffusion powder. When it was used the mixing powder of metal and metallic oxide, the dopping was slowly progressed and it needed the longer duration time and higher temperature, relatively. Metallic powder was vapoured under $1{\times}10^{-4}$ torr of vacuum pressure at $2050^{\circ}C$, first step, it were kept by the diffusion condition of 6 atm of $N_{2}$ accelerating pressure at $2050~2150^{\circ}C$. Each surface density of sapphire crystal are 0.2254(c) and $0.1199\;atom/{\AA}^2(a)$. The color of the Cr-doped sapphires was changed to red. Dopping reaction was come out more deep in the plane of ${10\bar{1}0}$ than {0001}. It was speculated that the planar density was one of the factors to determine diffusion effect.