• Bulletin of the Korean Chemical Society
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• 제32권6호
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• pp.1980-1984
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• 2011

A temperature- and coverage-dependant quasi-reversible change in two-photon photoemission (2PPE) of chemisorbed 1-phenyl-1-propyne (PP) on Cu(111) is reported. For PP on Cu(111) at 300 K probed at a photon energy of 4.13 eV, two broad peaks of comparable intensity show final state energies of 7.25 and 7.75 eV above the Fermi level. The former peak could be assigned to the first image potential state (IS, n = 1) and/or unoccupied molecular orbital (UMO), located at 3.1 eV above the Fermi level. The latter is plausibly attributed to a mix of unoccupied higher-order IS (and/or UMO) and occupied surface state (SS) of Cu(111). With decreasing the temperature, the former 2PPE peak shows a shift in position by about 0.2 eV, and the latter exhibits a dramatic increase in intensity. In the system, intermolecular interactions (and/or order-disorder transition) of PP and substrate lattice temperature may play a significant role in change in photoexcitation lifetime (or excitation cross-section), and the unoccupied molecular orbital (UMO)-metal (IS) charge transfer coupling. Our unique 2PPE results provide a deeper insight for understanding photoexcitation charge transfer with temperature in an organic molecule/metal system.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.619-619
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• 2013

The interfacial state between $Ta_2O_5$ and a Si substrate during the growth of $Ta_2O_5$ films by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy (SRPES). A newly synthesized liquid precursor Ta($N^tBu$) $(dmamp)_2Me$ was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. After each half reaction cycle, samples were analyzed using in-situ SRPES under ultrahigh vacuum at room temperature. SRPES analysis revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almostdisappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset between $Ta_2O_5$ and the Si substrate was 3.22 eV after 3.0 cycles.

• 한국진공학회지
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• 제20권4호
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• pp.252-257
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• 2011

본 연구 그룹은 6H-SiC (0001)에서 성장시킨 그라핀 층에 흡착된 퓨란(furan)의 고리 형성과 전자적 성질을 원자 힘 현미경(Atomic Force Microscope : AFM), C K-edge에 대한 Near Edge X-ray Absorption Fine Structure (NEXAFS) 스펙트럼, 핵심부 준위 광전자 분광스펙트럼(Core-level Photoemission Spectroscopy : CLPES)을 이용하여 연구했다. 우리는 그라핀위에 흡착된 퓨란 분자들이 화학적 도핑이 가능한 산소기의 홀 전자쌍을 통하여 그라핀의 특성을 조절할 수 있는 화학적 기능화에 이용될 수 있다는 것을 알아냈다. 또한, 퓨란이 자발적으로 세 가지의 다른 결합 구조들 중 하나로 고리를 형성한다는 것과 그라핀 위에 퓨란에 의해 형성된 고리의 전자적 성질들이 AFM, NEXAFS, CLPES를 이용하여 각각 설명될 수 있다는 것을 보여주었다.

• 한국전기전자재료학회논문지
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• 제18권2호
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• pp.125-129
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• 2005

Two kinds of physical treatments were examined for the analysis both of intrinsic surface and interior nature of CuInS $e_2$[CIS] and CuGaS $e_2$[CGS] films grown in separated systems. For the first method, a selenium protection layer which was immediately deposited after the growth of the CIS was investigated. The Se cap layer protects CISe surface from oxidation and contamination during the transport under ambient atmosphere. The Se cap was removed by thermal annealing at temperature above 15$0^{\circ}C$. After the decapping treatment at 2$25^{\circ}C$ for 60 min, ultraviolet photoemission and inverse photoemission measurements of the CIS film showed that its valence band maximum(VBM) and conduction band minimum (CBM) are located at 0.58 eV below and 0.52 eV above the Fermi level $E_{F}$, respectively. For the second treatment, an Ar ion beam etching was exploited. The etching with ion kinetic energy $E_{k}$ above 500 eV resulted in broadening of photoemission spectra of core signals and occasional development of metallic feature around $E_{F}$. These degradations were successfully suppressed by decreasing $E_{k}$ below 400 eV. CGS films etched with the beam of $E_{k}$ = 400 eV showed a band gap of 1.7 eV where $E_{F}$ was almost centered.st centered.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.567-567
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• 2012

Since the carbon nanotubes (CNTs) have extraordinary material properties, many researchers are trying to make a practical application in various fields [1]. In particular, the high surface area of CNTs was fascinated for nano-template on the catalytic system. $RuO_2$ coated CNTs are useful functional nano-composites in many applications, including super capacitors, fuel cells, biosensors, and field emitters. However, the research of interaction between CNTs and $RuO_2$ was not satisfied with various fields [2]. In this study, we will introduce the change of chemical and electrical state of $RuO_2$/CNTs at different temperatures by synchrotron radiation photoemission spectroscopy (SRPES). The t-MWCNTs used in this experiment were grown on the Ni/TiN/Si substrates by chemical vapor deposition. $RuO_2$ of 4-20 nm in thickness was deposited on the t-MWNTs by sputter. The SRPES measurements were carried out at the 4B1 beamline of the Pohang Accelerator Laboratory in Korea. The result of XPS measurement indicates that the deposited $RuO_2$ on the CNTs was reduced into pure Ru at above $300^{\circ}C$. And we confirmed that the effective work function of $RuO_2$/CNTs was decreased with increasing temperature.

• Journal of Magnetics
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• 제8권4호
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• pp.142-145
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• 2003

Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.283.2-283.2
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• 2013

The variation of chemical and interfacial state during the growth of Ta2O5 films on the Si substrate by atomic layer deposition (ALD) was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor Ta(NtBu)(dmamp)2Me was used as the metal precursor, with Ar as a purging gas and H2O as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of Ta2O5 growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the Ta5+ state, which corresponds with the stoichiometric Ta2O5, only appeared after 4.0 cycles. Additionally, tantalum silicate was not detected at the interfacial states between Ta2O5 and Si. The measured valence band offset value between Ta2O5 and the Si substrate was 3.08 eV after 2.5 cycles.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 창립10주년 제20회 학술발표회
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• pp.78-78
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• 2001

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.162-162
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• 1997